BSP372NH6327XTSA1

Mfr. #:: BSP372NH6327XTSA1
제조사:: Infineon Technologies
설명:: MOSFET SMALL SIGNAL N-CH
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: BSP372NH6327XTSA1 데이터 시트
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추가 정보:: BSP372NH6327XTSA1 추가 정보

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: SOT-223-4

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 100 V

Id - 연속 드레인 전류:: 1.8 A

Rds On - 드레인 소스 저항:: 230 mOhms

Vgs th - 게이트 소스 임계 전압:: 800 mV

Vgs - 게이트 소스 전압:: 10 V

Qg - 게이트 차지:: 9.5 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 1.8 W

구성:: 하나의

채널 모드:: 상승

포장:: 릴

키:: 1.6 mm

길이:: 6.5 mm

트랜지스터 유형:: 1 N-Channel

너비:: 3.5 mm

상표:: 인피니언 테크놀로지스

순방향 트랜스컨덕턴스 - 최소:: 5.1 S

가을 시간:: 18 ns

상품 유형:: MOSFET

상승 시간:: 6.7 ns

공장 팩 수량:: 1000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 47.3 ns

일반적인 켜기 지연 시간:: 5.1 ns

부품 번호 별칭:: BSP372N H6327 SP001059326

단위 무게:: 0.003951 oz

Tags: BSP372NH, BSP372N, BSP372, BSP37, BSP3, BSP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSP372NH6327XTSA1 설명

***klin Elektronik: INFINEON SMD Autom. MOSFET NFET 100V 1,8A 230mΩ 150°C SOT-223 BSP372

***p One Stop: Trans MOSFET N-CH 100V 1.8A Automotive 4-Pin(3+Tab) SOT-223 T/R

***ure Electronics: Single N-Channel 100 V 270 mOhm 14.3 nC OptiMOS Power Mosfet - SOT-223

***Yang: Trans MOSFET N-CH 100V 1.8A 4-Pin SOT-223 T/R - Product that comes on tape, but is not reeled (Alt:

***ment14 APAC: MOSFET, N-CH, 100V, 1.8A, SOT-223-4; Transistor Polarity:N Channel; Continuous Drain Current Id:1.8A; Source Voltage Vds:100V; On Resistance

***ark: MOSFET, N-CH, 100V, 1.8A, 150DEG C, 1.8W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes

***ineon: All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom

***nell: MOSFET, N-CH, 100V, 1.8A, SOT-223-4; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.8A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.153ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.4V; Power Dissipation Pd: 1.8W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.8 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 230 / Gate-Source Voltage V = 20 / Fall Time ns = 18 / Rise Time ns = 6.7 / Turn-OFF Delay Time ns = 47.3 / Turn-ON Delay Time ns = 5.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1.8

***(Formerly Allied Electronics): MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.2Ohm; ID 1.6A; SOT-223; PD 1W; VGS +/-20V; -55

***ure Electronics: Single N-Channel 100 V 0.2 Ohm 17 nC HEXFET® Power Mosfet - SOT-223

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS

***ical: Trans MOSFET N-CH Si 100V 2.2A 4-Pin(3+Tab) SOT-223 Tube

***S.I.T. Europe - USA - Asia: Small Signal Field-Effect Transistor, 1.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ark: Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:1W; No. of Pins:4Pins RoHS Compliant: Yes

***nell: MOSFET, N, 100V, 1.6A, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.6A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 2.1W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Temperature: 25°C; External Depth: 7.3mm; External Length / Height: 1.7mm; External Width: 6.7mm; Full Power Rating Temperature: 25°C; Junction to Case Thermal Resistance A: 60°C/W; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 13A; SMD Marking: FL4310; Tape Width: 12mm; Termination Type: Surface Mount Device; Voltage Vds Typ: 100V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V

***p One Stop: Trans MOSFET N-CH 100V 1.8A Automotive 4-Pin(3+Tab) SOT-223 T/R

***ure Electronics: Single N-Channel 100 V 24 mOhm 6.2 nC OptiMOS Small Signal Mosfet - SOT-223

***Yang: Trans MOSFET N-CH 100V 1.8A 4-Pin SOT-223 T/R - Product that comes on tape, but is not reeled (Alt:

***ment14 APAC: MOSFET, N-CH, 100V, 1.8A, SOT-223-4; Transistor Polarity:N Channel; Continuous Drain Current Id:1.8A; Source Voltage Vds:100V; On Resistance

***ark: MOSFET, AEC-Q101, N-CH, 100V, SOT223-4; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***ineon: All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom

***nell: MOSFET, N-CH, 100V, 1.8A, SOT-223-4; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.8A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.177ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 1.8W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.8 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 240 / Gate-Source Voltage V = 20 / Fall Time ns = 13.5 / Rise Time ns = 5.9 / Turn-OFF Delay Time ns = 21.9 / Turn-ON Delay Time ns = 4.6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1.8

***emi: Power MOSFET, N-Channel, A-FET, 100 V, 2.3 A, 0.2 Ω, SOT-223

***Yang: Trans MOSFET N-CH 100V 2.3A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel

***ment14 APAC: MOSFET, N-CH, 100V, 2.3A, SOT-223-3; Transistor Polarity:N Channel; Continuous Drain Current Id:2.3A; Source Voltage Vds:100V; On Resistance

***ark: Transistor,mosfet,n-Channel,100V V(Br)Dss,2.3A I(D),sot-223 Rohs Compliant: Yes

***Yang: Trans MOSFET N-CH 100V 2.3A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel

***ser: MOSFETs 100V N-Channel a-FET Logic Level

***r Electronics: Power Field-Effect Transistor, 2.3A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***enic: 100V 2.3A 220m´Î@5V1.15A 2.7W 2V@250uA 39pF@25V N Channel 340pF@25V 10.2nC@5V -55¡Í~+150¡Í@(Tj) SOT-223 MOSFETs ROHS

***emi: N-Channel A-FET 200V, 1.13A, 800mΩ

***S: French Electronic Distributor since 1988

***ure Electronics: N-Channel 100 V 0.25 Ohm Power MOSFET Surface Mount -SOT-223-3

***ical: Trans MOSFET N-CH 100V 2A Automotive 4-Pin(3+Tab) SOT-223 T/R

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: SOT-223 Polarity: N Variants: Enhancement mode Power dissipation: 2 W

***ark: Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:2W; No. of Pins:4Pins RoHS Compliant: No

BSP372NH6327XTSA1 추가 정보

Small Signal Power MOSFETs: Infineon Small Signal Power MOSFETs are available in 7 industry-standard package types ranging from the largest SOT-223 down to the smallest SOT-363 measuring 2.1mm x 2mm x 0.9mm. These are offered in single, dual and complementary configurations. They are available in N-Channel, P-Channel or Complementary (both P-Channel and N-Channel within the same package) versions to meet a variety of design requirements. Typical applications for these devices include battery protection, LED lighting, low voltage drives, and DC/DC converters. Each of these Small Signal Power MOSFETs are also qualified to Automotive AEC Q101.Learn More

Market price

부분 #	제조	설명	재고	가격
BSP372NH6327XTSA1 DISTI # BSP372NH6327XTSA1CT-ND	Infineon Technologies AG	MOSFET N-CH 100V 1.7A SOT-223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	6177In Stock	500:$0.4862 100:$0.6429 10:$0.8220 1:$0.9400
BSP372NH6327XTSA1 DISTI # BSP372NH6327XTSA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 100V 1.7A SOT-223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	6177In Stock	500:$0.4862 100:$0.6429 10:$0.8220 1:$0.9400
BSP372NH6327XTSA1 DISTI # BSP372NH6327XTSA1TR-ND	Infineon Technologies AG	MOSFET N-CH 100V 1.7A SOT-223 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	6000In Stock	1000:$0.3851
BSP372NH6327XTSA1 DISTI # SP001059326	Infineon Technologies AG	Trans MOSFET N-CH 100V 1.8A 4-Pin SOT-223 T/R (Alt: SP001059326) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 48020	1000:€0.2809 2000:€0.2299 4000:€0.2099 6000:€0.1939 10000:€0.1799
BSP372NH6327XTSA1 DISTI # BSP372NH6327XTSA1	Infineon Technologies AG	Trans MOSFET N-CH 100V 1.8A 4-Pin SOT-223 T/R - Tape and Reel (Alt: BSP372NH6327XTSA1) RoHS: Compliant Min Qty: 2000 Container: Reel	Americas - 0	2000:$0.3089 4000:$0.3079 6000:$0.3079 10000:$0.3069 20000:$0.3059
BSP372NH6327XTSA1 DISTI # BSP372N H6327	Infineon Technologies AG	Trans MOSFET N-CH 100V 1.8A 4-Pin SOT-223 T/R (Alt: BSP372N H6327) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Asia - 0	1000:$0.2443 2000:$0.2375 3000:$0.2311 5000:$0.2250 10000:$0.2221 25000:$0.2192 50000:$0.2165
BSP372NH6327XTSA1 DISTI # 97Y1261	Infineon Technologies AG	MOSFET, N-CH, 100V, 1.8A, SOT-223-4,Transistor Polarity:N Channel,Continuous Drain Current Id:1.8A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.153ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.4V,Power RoHS Compliant: Yes	3123	100:$0.3950 50:$0.4680 25:$0.5400 10:$0.6130 1:$0.7400
BSP372NH6327XTSA1 DISTI # 726-BSP372NH6327XTSA	Infineon Technologies AG	MOSFET SMALL SIGNAL N-CH RoHS: Compliant	25633	1:$0.7300 10:$0.6130 100:$0.3950 1000:$0.3160
BSP372N H6327 DISTI # 726-BSP372NH6327	Infineon Technologies AG	MOSFET SMALL SIGNAL N-CH RoHS: Compliant	2484	1:$0.7300 10:$0.6130 100:$0.3950 1000:$0.3160
BSP372NH6327XTSA1	Infineon Technologies AG	Single N-Channel 100 V 270 mOhm 14.3 nC OptiMOS Power Mosfet - SOT-223 RoHS: Not Compliant	990Cut Tape/Mini-Reel	1:$0.6250 50:$0.4300 100:$0.4050 250:$0.3700 500:$0.3450
BSP372NH6327XTSA1 DISTI # 1107754	Infineon Technologies AG	MOSFET NCHANNEL 100V 1.8A OPTIMOS SOT223, PK	450	6250:£0.1780 2500:£0.1810 1250:£0.2140 250:£0.2690 50:£0.4250
BSP372NH6327XTSA1 DISTI # BSP372NH6327XTSA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,100V,1.8A,1.8W,SOT223	914	3:$0.4155 25:$0.3560 100:$0.2872 250:$0.2484 1000:$0.2313
BSP372NH6327XTSA1 DISTI # BSP372NH6327XTSA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,100V,1.8A,1.8W,SOT223	914	3:$0.4136 25:$0.3544 100:$0.2859 250:$0.2473 1000:$0.2303
BSP372NH6327XTSA1 DISTI # XSFP00000152037	Infineon Technologies AG	Small Signal Field-Effect Transistor, 0.23AI(D),50V, 1-Element, P-Channel, Silicon,Metal-oxideSemiconductor FET RoHS: Compliant	534	534:$1.1400 160:$1.2500
BSP372NH6327XTSA1 DISTI # XSKDRABV0017820	Infineon Technologies AG	RoHS: Compliant	82020	82020:$0.2680 2000:$0.2871
BSP372NH6327XTSA1 DISTI # 2617434	Infineon Technologies AG	MOSFET, N-CH, 100V, 1.8A, SOT-223-4 RoHS: Compliant	3118	500:£0.2320 250:£0.2760 100:£0.3150 25:£0.4380 5:£0.5500
BSP372NH6327XTSA1 DISTI # 2617434	Infineon Technologies AG	MOSFET, N-CH, 100V, 1.8A, SOT-223-4 RoHS: Compliant	3123	500:$0.7090 100:$0.9570 10:$1.2400 1:$1.4300

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BSP372NH6327XTSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes