BG3130H6327XTSA1

BG3130H6327XTSA1
Mfr. #:
BG3130H6327XTSA1
제조사:
Infineon Technologies
설명:
MOSFET N-CH DUAL 8V 25MA SOT363
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
BG3130H6327XTSA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사
인피니언 테크놀로지스
제품 카테고리
트랜지스터 - FET, MOSFET - 단일
시리즈
BG3130
포장
부분 별칭
3130 BG BG3130H6327XT H6327 SP000753494
패키지 케이스
SOT-363-6
기술
Tags
BG3130H, BG3130, BG313, BG31, BG3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 8V 0.025A 6-Pin SOT-363 T/R
***et
Transistor RF FET Dual N-CH 8V 25mA 800MHz 6-Pin SOT-363 T/R
***ineon SCT
DUAL N-Channel MOSFET Tetrode, SOT363, RoHS
***i-Key
MOSFET N-CH DUAL 8V 25MA SOT363
***ineon
DUAL N-Channel MOSFET Tetrode | Summary of Features: Two gain controlled input stage for UHF and VHF -tuners e.g. (NTSC, PAL); Two AGC amplifiers in one single package; Integrated gate protection diodes; High AGC-range, low noise figure, high gain; Improved cross modulation at gain reduction; Pb-free (RoHS compliant) package; Qualified according AEC | Target Applications: Set Top Box; TV
부분 # 제조 설명 재고 가격
BG3130H6327XTSA1
DISTI # BG3130H6327XTSA1TR-ND
Infineon Technologies AGMOSFET N-CH DUAL 8V 25MA SOT363
RoHS: Compliant
Min Qty: 9000
Container: Tape & Reel (TR)
Limited Supply - Call
    BG3130H6327XTSA1
    DISTI # BG3130H6327XTSA1
    Infineon Technologies AGTrans MOSFET N-CH 8V 0.025A 6-Pin SOT-363 T/R - Bulk (Alt: BG3130H6327XTSA1)
    Min Qty: 3572
    Container: Bulk
    Americas - 0
    • 35720:$0.0879
    • 17860:$0.0899
    • 10716:$0.0929
    • 7144:$0.0969
    • 3572:$0.0999
    BG 3130 H6327
    DISTI # 726-BG3130H6327
    Infineon Technologies AGRF MOSFET Transistors RF MOSFETS
    RoHS: Compliant
    2800
    • 1:$0.4200
    • 10:$0.3190
    • 100:$0.1730
    • 1000:$0.1300
    • 3000:$0.1120
    • 9000:$0.1050
    BG3130H6327XTSA1
    DISTI # 726-BG3130H6327XTSA1
    Infineon Technologies AGRF MOSFET Transistors RF MOSFETS
    RoHS: Compliant
    0
      BG3130H6327XTSA1Infineon Technologies AG 
      RoHS: Not Compliant
      6000
      • 1000:$0.0900
      • 100:$0.1000
      • 500:$0.1000
      • 1:$0.1100
      • 25:$0.1100
      영상 부분 # 설명
      BG3130H6327XTSA1

      Mfr.#: BG3130H6327XTSA1

      OMO.#: OMO-BG3130H6327XTSA1

      RF MOSFET Transistors RF MOSFETS
      BG3130H6327

      Mfr.#: BG3130H6327

      OMO.#: OMO-BG3130H6327-1190

      8V,0.025A,Dual N-channel power MOSFET
      BG3130H6327XTSA1

      Mfr.#: BG3130H6327XTSA1

      OMO.#: OMO-BG3130H6327XTSA1-INFINEON-TECHNOLOGIES

      MOSFET N-CH DUAL 8V 25MA SOT363
      유효성
      재고:
      Available
      주문 시:
      4000
      수량 입력:
      BG3130H6327XTSA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$0.13
      US$0.13
      10
      US$0.13
      US$1.25
      100
      US$0.12
      US$11.87
      500
      US$0.11
      US$56.05
      1000
      US$0.11
      US$105.50
      시작
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