OMO ElectronicOMO Electronic
Expand menu
0 카트

FCH125N60E

FCH125N60E
Mfr. #:
FCH125N60E
제조사:
ON Semiconductor / Fairchild
설명:
MOSFET 600V 29A N-Chnl SuperFET Easy-Drive
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
FCH125N60E 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
FCH125N60E 추가 정보
제품 속성
속성 값
제조사:
온세미컨덕터
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
구멍을 통해
패키지/케이스:
TO-247-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
600 V
Id - 연속 드레인 전류:
29 A
Rds On - 드레인 소스 저항:
125 mOhms
Vgs th - 게이트 소스 임계 전압:
2.5 V
Vgs - 게이트 소스 전압:
20 V, 30 V
Qg - 게이트 차지:
78 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
278 W
구성:
하나의
채널 모드:
상승
상표명:
슈퍼펫 II
포장:
튜브
키:
20.82 mm
길이:
15.87 mm
시리즈:
FCH125N60E
트랜지스터 유형:
1 N-Channel
너비:
4.82 mm
상표:
온세미컨덕터 / 페어차일드
순방향 트랜스컨덕턴스 - 최소:
25 S
가을 시간:
23 ns
상품 유형:
MOSFET
상승 시간:
20 ns
공장 팩 수량:
450
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
106 ns
일반적인 켜기 지연 시간:
23 ns
단위 무게:
0.225401 oz
Tags
FCH12, FCH1, FCH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 29 A, 125 mΩ, TO-247
***et
Trans MOSFET N-CH 600V 29A 3-Pin TO-247 Tube
***ical
Trans MOSFET N-CH 60V 29A
***i-Key
MOSFET N-CH 600V TO247
***ark
SF2 600V 125MOHM E TO247 / TUBE
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 29A, TO-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.102ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:278W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:SuperFET II Series; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018)
***nell
MOSFET, CAN-N, 600V, 29A, TO-247-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:29A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.102ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:278W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:SuperFET II Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET II MOSFET series. Noted by the “E” part number suffix, this family helps manage EMI issues and allows for easier designimplementation. For faster switching in applications where switching losses must be at an absolute minimum, please consider the SuperFET II MOSFET series.
SuperFET® II Power MOSFETs
ON Semiconductor SuperFET® II Power MOSFETs are a new proprietary generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. These SuperFET® II MOSFETs are suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.Learn More
부분 # 제조 설명 재고 가격
FCH125N60E
DISTI # V36:1790_14141238		ON SemiconductorSUPERFET2 600V 125MOHM SLOW VE0
  • 450000:$1.7580
  • 225000:$1.7620
  • 45000:$2.1270
  • 4500:$2.8150
  • 450:$2.9320
FCH125N60E
DISTI # V99:2348_14141238		ON SemiconductorSUPERFET2 600V 125MOHM SLOW VE0
    FCH125N60E
    DISTI # FCH125N60E-ND    		ON SemiconductorMOSFET N-CH 600V 29A TO247
    RoHS: Compliant
    Min Qty: 450
    Container: Tube    		Temporarily Out of Stock
    • 450:$2.9320
    FCH125N60E
    DISTI # FCH125N60E    		ON SemiconductorSUPERFET2 600V 125MOHM SLOW VERSION - Bulk (Alt: FCH125N60E)
    Min Qty: 140
    Container: Bulk    		Americas - 0
    • 420:$2.1900
    • 700:$2.1900
    • 1400:$2.1900
    • 140:$2.2900
    • 280:$2.2900
    FCH125N60E
    DISTI # FCH125N60E    		ON SemiconductorSUPERFET2 600V 125MOHM SLOW VERSION - Rail/Tube (Alt: FCH125N60E)
    RoHS: Compliant
    Min Qty: 450
    Container: Tube    		Americas - 0
    • 4500:$1.7900
    • 450:$1.8900
    • 900:$1.8900
    • 1800:$1.8900
    • 2700:$1.8900
    FCH125N60E
    DISTI # 512-FCH125N60E    		ON SemiconductorMOSFET 600V 29A N-Chnl SuperFET Easy-Drive
    RoHS: Compliant    		472
    • 1:$3.9900
    • 10:$3.3900
    • 100:$2.9400
    • 250:$2.7900
    • 500:$2.5000
    • 1000:$2.1100
    • 2500:$2.0000
    FCH125N60EFairchild Semiconductor Corporation 
    RoHS: Not Compliant    		324
    • 1000:$2.2100
    • 500:$2.3300
    • 100:$2.4200
    • 25:$2.5300
    • 1:$2.7200
    FCH125N60E
    DISTI # 2565213    		ON SemiconductorMOSFET, N-CH, 600V, 29A, TO-247-30
    • 500:£1.8100
    • 250:£2.0200
    • 100:£2.1400
    • 10:£2.4600
    • 1:£3.2300
    FCH125N60E
    DISTI # 2565213    		ON SemiconductorMOSFET, N-CH, 600V, 29A, TO-247-3
    RoHS: Compliant    		0
    • 1350:$4.6400
    • 900:$4.9600
    • 450:$6.1200
    • 10:$8.2700
    • 1:$9.2600
    영상 부분 # 설명
    AT27C256R-70PU

    Mfr.#: AT27C256R-70PU

    OMO.#: OMO-AT27C256R-70PU

    		 EPROM 256Kb (32Kx8) OTP 5V 70ns
    AT27C256R-45PU

    Mfr.#: AT27C256R-45PU

    OMO.#: OMO-AT27C256R-45PU

    		 EPROM 256Kb (32Kx8) OTP 5V 45ns
    MMBT2222ALT1G

    Mfr.#: MMBT2222ALT1G

    OMO.#: OMO-MMBT2222ALT1G

    		 Bipolar Transistors - BJT SS SOT23 GP XSTR NPN 40V
    DS1220AD-200+

    Mfr.#: DS1220AD-200+

    OMO.#: OMO-DS1220AD-200-

    		 NVRAM 16k Nonvolatile SRAM
    STW24N60M6

    Mfr.#: STW24N60M6

    OMO.#: OMO-STW24N60M6

    		 MOSFET N-channel 600 V, 105 mOhm typ., 22 A MDmesh M6 Power MOSFET in a TO-247 package
    MUR160RLG

    Mfr.#: MUR160RLG

    OMO.#: OMO-MUR160RLG

    		 Rectifiers 600V 1A UltraFast
    FCA22N60N

    Mfr.#: FCA22N60N

    OMO.#: OMO-FCA22N60N

    		 MOSFET 600V N-Channel SupreMOS
    IRFP27N60KPBF

    Mfr.#: IRFP27N60KPBF

    OMO.#: OMO-IRFP27N60KPBF

    		 MOSFET RECOMMENDED ALT 844-IRFP27N60K
    IDW12G65C5XKSA1

    Mfr.#: IDW12G65C5XKSA1

    OMO.#: OMO-IDW12G65C5XKSA1

    		 Schottky Diodes & Rectifiers SIC DIODES
    BAT54WT1G

    Mfr.#: BAT54WT1G

    OMO.#: OMO-BAT54WT1G

    		 Schottky Diodes & Rectifiers 30V 200mW Single
    유효성
    재고:
    472
    주문 시:
    2455
    수량 입력:
    FCH125N60E의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$3.99
    US$3.99
    10
    US$3.39
    US$33.90
    100
    US$2.94
    US$294.00
    250
    US$2.79
    US$697.50
    500
    US$2.50
    US$1 250.00
    1000
    US$2.11
    US$2 110.00
    2500
    US$2.00
    US$5 000.00
    5000
    US$1.93
    US$9 650.00
    시작
    최신 제품
    More Newest Products
    Top