SMBT3906UE6327HTSA1

Mfr. #:: SMBT3906UE6327HTSA1
제조사:: Infineon Technologies
설명:: Bipolar Transistors - BJT PNP Silicon Switch TRANSISTOR
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SMBT3906UE6327HTSA1 데이터 시트
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ECAD Model:

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: 양극성 트랜지스터 - BJT

RoHS:: Y

장착 스타일:: SMD/SMT

패키지/케이스:: SC-74-6

트랜지스터 극성:: PNP

구성:: 하나의

컬렉터-이미터 전압 VCEO 최대:: 40 V

컬렉터-베이스 전압 VCBO:: 40 V

이미터-베이스 전압 VEBO:: 6 V

수집기-이미터 포화 전압:: 0.4 V

이득 대역폭 곱 fT:: 250 MHz

최소 작동 온도:: - 65 C

최대 작동 온도:: + 150 C

시리즈:: SMBT3906

포장:: 릴

상표:: 인피니언 테크놀로지스

지속적인 수집가 전류:: 200 mA

Pd - 전력 손실:: 330 mW

상품 유형:: BJT - 양극성 트랜지스터

공장 팩 수량:: 3000

하위 카테고리:: 트랜지스터

부품 번호 별칭:: 3906U E6327 SMBT SMBT396UE6327XT SP000012616

Tags: SMBT3906UE, SMBT3906U, SMBT3906, SMBT390, SMBT39, SMBT3, SMBT, SMB

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SMBT3906UE6327HTSA1 설명

*** Electronic Components: Bipolar Transistors - BJT PNP Silicon Switch TRANSISTOR

***et: Trans GP BJT PNP 40V 0.2A 6-Pin SC74 T/R

***ineon: PNP Silicon Switching Transistor | Summary of Features: High DC current gain: 0.1 mA to 100 mA; Low collector-emitter saturation voltage; For SMBT3906S and SMBT3906U:; Two (galvanic) internal isolated transistor with good matching in one package; Complementary types: SMBT3904...MMBT3904 (NPN) SMBT3906S/ U: for orientation in reel see package information below; Pb-free (RoHS compliant) package; Qualified according AEC Q101

***eco: Transistor General Purpose BJT PNP 40 Volt 0.2A 6-Pin SC-70

***r Electronics: Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon

*** Source Electronics: Trans GP BJT PNP 40V 0.2A 300mW 6-Pin SC-70 T/R / TRANS 2PNP 40V 0.2A SC70-6

***ure Electronics: FEB3906 Series 40 V CE Breakdown 0.2 A PNP General Purpose Amplifier - SC-70-6

***rchild Semiconductor: This device is designed for general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA. Sourced from Process 66.

***ark: Bipolar Transistor, Pnp Dual, -40V Sc-70; Transistor Polarity:pnp; Collector Emitter Voltage V(Br)Ceo:40V; Power Dissipation Pd:300Mw; Dc Collector Current:200Ma; Dc Current Gain Hfe:300Hfe; No. Of Pins:6Pins; Product Range:- Rohs Compliant: Yes

***nell: TRANSISTOR PNP 40V 0.2A SC70-6; Transistor Type:General Purpose; Transistor Polarity:PNP; Collector-to-Emitter Breakdown Voltage:40V; Max Current Ic Continuous a:100mA; Max Voltage Vce Sat:400mV; Power Dissipation:300mW; Min Hfe:30; Typ Gain Bandwidth ft:200MHz; Case Style:SC-70; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C

***emi: General Purpose Bipolar Transistor PNP Bipolar Transistor

***roFlash: Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon

***ure Electronics: MMBT Series 40 V 200 mA SMT PNP Silicon General Purpose Transistor - SOT-323

***(Formerly Allied Electronics): ON Semi MMBT3906WT1G PNP Bipolar Transistor, 0.2 A, 40 V, 3-Pin SC-70 | ON Semiconductor MMBT3906WT1G

***p One Stop: Trans GP BJT PNP 40V 0.2A Automotive 3-Pin SC-70 T/R

***th Star Micro: NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-70 which is designed for low power surface mount applications.

***peria: PBSS3540E - 40 V, 500 mA PNP low VCEsat (BISS) transistor

***ical: Trans GP BJT PNP 40V 0.5A Automotive 3-Pin SC-75 T/R

***ponent Stockers USA: 500 mA 40 V PNP Si SMALL SIGNAL TRANSISTOR

***ure Electronics: UMT3906 Series 40 V 0.2 A SMT PNP General Purpose Transistor - SC-70

***ical: Trans GP BJT PNP 40V 0.2A 200mW 3-Pin UMT T/R

***ark: Transistor Polarity:pnp; Collector Emitter Voltage V(Br)Ceo:40V; Dc Collector Current:200Ma; Power Dissipation Pd:6.2W; Transistor Mounting:surface Mount; No. Of Pins:3Pins; Transition Frequency Ft:250Mhz; Dc Current Gain Hfe:100Hfe Rohs Compliant: Yes

***S: French Electronic Distributor since 1988

***SIT Distribution GmbH: Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon

*** Electronic Components: Bipolar Transistors - BJT SOT-23 PNP GP AMP

***ark: TRANSISTOR,BJT,PAIR,PNP,45V V(BR)CEO,200MA I(C),SO

***rchild Semiconductor: This device is designed for general purpose amplifier applications at collector currents to 200 mA. Sourced from Process 68.

***ure Electronics: 2SAR523UB Series 50 V 100 mA PNP General Purpose Transistor - UMT3F

***ical: Trans GP BJT PNP 50V 0.1A 3-Pin UMTF T/R

***nell: TRANS, PNP, -50V, -0.1A, 150DEG C, 0.2W; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -50V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 200mW; DC Collector Current: -100mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-323FL; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

Market price

부분 #	제조	설명	재고	가격
SMBT3906UE6327HTSA1 DISTI # V36:1790_06391658	Infineon Technologies AG	Trans GP BJT PNP 40V 0.2A Automotive 6-Pin SC-74 T/R RoHS: Compliant	0	9000000:$0.0457 1800000:$0.0517 180000:$0.0638 18000:$0.0659
SMBT3906UE6327HTSA1 DISTI # SMBT3906UE6327HTSA1TR-ND	Infineon Technologies AG	TRANS 2PNP 40V 0.2A SC74-6 RoHS: Compliant Min Qty: 18000 Container: Tape & Reel (TR)	Limited Supply - Call	18000:$0.0659
SMBT3906UE6327HTSA1 DISTI # SMBT3906UE6327HTSA1	Infineon Technologies AG	Trans GP BJT PNP 40V 0.2A 6-Pin SC74 T/R - Bulk (Alt: SMBT3906UE6327HTSA1) RoHS: Compliant Min Qty: 12500 Container: Bulk	Americas - 0	125000:$0.0254 62500:$0.0259 37500:$0.0268 25000:$0.0278 12500:$0.0288
SMBT3906UE6327HTSA1 DISTI # SMBT3906UE6327HTSA1	Infineon Technologies AG	Trans GP BJT PNP 40V 0.2A 6-Pin SC74 T/R - Tape and Reel (Alt: SMBT3906UE6327HTSA1) RoHS: Compliant Min Qty: 18000 Container: Reel	Americas - 0	180000:$0.0400 90000:$0.0408 54000:$0.0422 36000:$0.0437 18000:$0.0454
SMBT 3906U E6327 DISTI # 726-SMBT3906UE6327	Infineon Technologies AG	Bipolar Transistors - BJT PNP Silicon Switch TRANSISTOR RoHS: Compliant	0
SMBT3906UE6327HTSA1 DISTI # 726-SMBT3906UE6327HT	Infineon Technologies AG	Bipolar Transistors - BJT PNP Silicon Switch TRANSISTOR RoHS: Compliant	0
SMBT3906UE6327HTSA1	Infineon Technologies AG	Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon RoHS: Compliant	117000	1:$0.0300 25:$0.0300 100:$0.0300 500:$0.0300 1000:$0.0300

관련 상품

영상	부분 #	설명
	Mfr.#: SMBT3906UE6327HTSA1 OMO.#: OMO-SMBT3906UE6327HTSA1	Bipolar Transistors - BJT PNP Silicon Switch TRANSISTOR
	Mfr.#: SMBT3906UE6327HTSA1 OMO.#: OMO-SMBT3906UE6327HTSA1-INFINEON-TECHNOLOGIES	TRANS 2PNP 40V 0.2A SC74-6
	Mfr.#: SMBT3906U OMO.#: OMO-SMBT3906U-1190	신규 및 오리지널
	Mfr.#: SMBT3906U E6327 OMO.#: OMO-SMBT3906U-E6327-1190	신규 및 오리지널
	Mfr.#: SMBT3906UE6327 OMO.#: OMO-SMBT3906UE6327-1190	Transisto

유효성

재고:: Available
주문 시:: 5000
수량 입력:

SMBT3906UE6327HTSA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$0.43~~; ~~US$0.43~~

10: ~~US$0.28~~; ~~US$2.83~~

100: ~~US$0.12~~; ~~US$12.20~~

1000: ~~US$0.09~~; ~~US$93.00~~

2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.

시작

SMBT3906UE 4
SMBT3906U 5
SMBT3906 39
SMBT390 84
SMBT39 85
SMBT3 86
SMBT 303
SMB 9273

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SMBT3906UE6327HTSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes