SI4425DDY-T1-GE3

Mfr. #:: SI4425DDY-T1-GE3
제조사:: Vishay
설명:: MOSFET P-CH 30V 19.7A 8-SOIC
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SI4425DDY-T1-GE3 데이터 시트
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ECAD Model:
추가 정보:: SI4425DDY-T1-GE3 추가 정보

제품 속성
속성 값

제조사: 비쉐이 실리콘

제품 카테고리: FET - 단일

시리즈: 트렌치FETR

포장: Digi-ReelR 대체 패키징

부분 별칭: SI4425DDY-GE3

단위 무게: 0.006596 oz

장착 스타일: SMD/SMT

패키지 케이스: 8-SOIC (0.154", 3.90mm Width)

기술: 시

작동 온도: -55°C ~ 150°C (TJ)

장착형: 표면 실장

채널 수: 1 Channel

공급자-장치-패키지: 8-SO

구성: 싱글 쿼드 드레인 트리플 소스

FET형: MOSFET P-채널, 금속 산화물

파워맥스: 5.7W

트랜지스터형: 1 P-Channel

드레인-소스 전압 Vdss: 30V

입력-커패시턴스-Ciss-Vds: 2610pF @ 15V

FET 기능: 기준

Current-Continuous-Drain-Id-25°C: 19.7A (Tc)

Rds-On-Max-Id-Vgs: 9.8 mOhm @ 13A, 10V

Vgs-th-Max-Id: 2.5V @ 250μA

Gate-Charge-Qg-Vgs: 80nC @ 10V

Pd 전력 손실: 2.5 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 15 ns 9 ns

상승 시간: 41 ns 9 ns

Vgs 게이트 소스 전압: 20 V

Id-연속-드레인-전류: 13 A

Vds-드레인-소스-고장-전압: - 30 V

Rds-On-Drain-Source-Resistance: 9.8 mOhms

트랜지스터 극성: P-채널

일반 꺼짐 지연 시간: 36 ns 42 ns

일반 켜기 지연 시간: 52 ns 12 ns

채널 모드: 상승

Tags: SI4425DD, SI4425D, SI4425, SI442, SI44, SI4

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4425DDY-T1-GE3 설명

***ure Electronics: SI4425DDY Series 30 V 9.8 mOhm 80 nC P-Channel Surface Mount Mosfet - SOIC-8

***ical: Trans MOSFET P-CH 30V 19.7A 8-Pin SOIC N T/R

***ark: P-Channel 30-V (D-S) Mosfet Rohs Compliant: Yes

***ukat: P-Ch 30V 19,7A 2,5W 0,0098R SO8

***ment14 APAC: MOSFET, P-CH, 30V, 19.7A, SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-19.7A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):8.1mohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:5.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-19.7A; Power Dissipation Pd:5.7W; Voltage Vgs Max:20V

SI4425DDY-T1-GE3 추가 정보

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

부분 #	제조	설명	재고	가격
SI4425DDY-T1-GE3 DISTI # V72:2272_07431897	Vishay Intertechnologies	Trans MOSFET P-CH 30V 13A 8-Pin SOIC N T/R RoHS: Compliant	903	500:$0.3994 250:$0.4723 100:$0.4736 25:$0.5800 10:$0.5825 1:$0.6823
SI4425DDY-T1-GE3 DISTI # SI4425DDY-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 30V 19.7A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	98621In Stock	1000:$0.4169 500:$0.5212 100:$0.7036 10:$0.9120 1:$1.0400
SI4425DDY-T1-GE3 DISTI # SI4425DDY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 30V 19.7A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	98621In Stock	1000:$0.4169 500:$0.5212 100:$0.7036 10:$0.9120 1:$1.0400
SI4425DDY-T1-GE3 DISTI # SI4425DDY-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 30V 19.7A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	97500In Stock	2500:$0.3669
SI4425DDY-T1-GE3 DISTI # 27083125	Vishay Intertechnologies	Trans MOSFET P-CH 30V 13A 8-Pin SOIC N T/R RoHS: Compliant	10000	2500:$0.3866
SI4425DDY-T1-GE3 DISTI # 30331459	Vishay Intertechnologies	Trans MOSFET P-CH 30V 13A 8-Pin SOIC N T/R RoHS: Compliant	903	500:$0.3994 250:$0.4723 100:$0.4736 25:$0.5800 23:$0.5825
SI4425DDY-T1-GE3 DISTI # 30608652	Vishay Intertechnologies	Trans MOSFET P-CH 30V 13A 8-Pin SOIC N T/R RoHS: Compliant	600	250:$0.7433 100:$0.8007 50:$0.9805 10:$1.0442 7:$3.8123
SI4425DDY-T1-GE3 DISTI # SI4425DDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 13A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4425DDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 2500	2500:$0.3339 5000:$0.3239 10000:$0.3109 15000:$0.3029 25000:$0.2939
SI4425DDY-T1-GE3 DISTI # SI4425DDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 13A 8-Pin SOIC N T/R (Alt: SI4425DDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
SI4425DDY-T1-GE3 DISTI # SI4425DDY-T1-GE3	Vishay Intertechnologies	Transistor MOSFET P-CH 30V 19.7A 8-Pin SOIC (Alt: SI4425DDY-T1-GE3) RoHS: Compliant Min Qty: 2500	Europe - 0	2500:€0.4949 5000:€0.3379 10000:€0.2909 15000:€0.2679 25000:€0.2499
SI4425DDY-T1-GE3 DISTI # 05W6943	Vishay Intertechnologies	Trans MOSFET P-CH 30V 13A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 05W6943) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$1.1000 10:$0.8810 25:$0.8100 50:$0.7390 100:$0.6680 250:$0.6110 500:$0.5520
SI4425DDY-T1-GE3 DISTI # 15R5011	Vishay Intertechnologies	MOSFET, P CHANNEL, -30V, -19.7A, SOIC-8, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-19.7A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):8100µohm,Rds(on) Test Voltage Vgs:-10V,No. of Pins:8Pins , RoHS Compliant: Yes	0	1:$0.3160 2500:$0.3130 5000:$0.3040 10000:$0.2930
SI4425DDY-T1-GE3 DISTI # 05W6943	Vishay Intertechnologies	MOSFET, P CHANNEL, -30V, -19.7A, SOIC-8,Transistor Polarity:P Channel,Continuous Drain Current Id:-19.7A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):8100µohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.2V , RoHS Compliant: Yes	1009	1:$1.1000 10:$0.8810 25:$0.8100 50:$0.7390 100:$0.6680 250:$0.6110 500:$0.5520 1000:$0.4620
SI4425DDY-T1-GE3 DISTI # 781-SI4425DDY-GE3	Vishay Intertechnologies	MOSFET -30V Vds 20V Vgs SO-8 RoHS: Compliant	21422	1:$0.9200 10:$0.7340 100:$0.5570 500:$0.4600 1000:$0.4380 2500:$0.3840
SI4425DDY-T1-GE3	Vishay Intertechnologies	SI4425DDY Series 30 V 9.8 mOhm 80 nC P-Channel Surface Mount Mosfet - SOIC-8 RoHS: Compliant	22500Reel	2500:$0.4000
SI4425DDY-T1-GE3	Vishay Siliconix	SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 13A I(D), 30V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET	10	7:$0.6000 1:$0.8000
SI4425DDY-T1-GE3 DISTI # SI4425DDY-GE3	Vishay Intertechnologies	P-Ch 30V 19,7A 2,5W 0,0098R SO8 RoHS: Compliant	1850	50:€0.3180 100:€0.2580 500:€0.2280 2500:€0.2205
SI4425DDY-T1-GE3.	Vishay Intertechnologies	MOSFET 30V, 12 MOHMS@10V	Americas - 2350	25:$0.4640 100:$0.4000 250:$0.3980 500:$0.3600 1000:$0.3550
SI4425DDY-T1-GE3	Vishay Intertechnologies	MOSFET -30V Vds 20V Vgs SO-8	Americas - 5000	2500:$0.3230 5000:$0.3050 10000:$0.2950
SI4425BDY-T1-E3	Vishay Intertechnologies	MOSFET 30V 11A 2.5W RoHS: Compliant	Americas -
SI4425DDY-T1-GE3 DISTI # 1779263	Vishay Intertechnologies	MOSFET, P-CH, 30V, 19.7A, SO8 RoHS: Compliant	20653	5:£0.6350 25:£0.5720 100:£0.4290 250:£0.3920 500:£0.3550
SI4425DDY-T1-GE3 DISTI # XSFP00000126798	Vishay Siliconix	RoHS: Compliant	30285	2500:$0.8000 30285:$0.7273
SI4425DDY-T1-GE3 DISTI # C1S806001147793	Vishay Intertechnologies	MOSFETs	600	500:$0.4960 250:$0.5830 100:$0.6280 50:$0.7690 10:$0.8190 1:$2.9900
SI4425DDY-T1-GE3 DISTI # C1S803600844982	Vishay Intertechnologies	MOSFETs RoHS: Compliant	903	250:$0.4702 100:$0.4716 25:$0.5768 10:$0.5792
SI4425DDY-T1-GE3 DISTI # 1779263	Vishay Intertechnologies	MOSFET, P-CH, 30V, 19.7A, SO8 RoHS: Compliant	21074	1:$1.4600 10:$1.1700 100:$0.8810 500:$0.7280 1000:$0.6090 2500:$0.6080

영상	부분 #	설명
	Mfr.#: SI4425DDY-T1-GE3 OMO.#: OMO-SI4425DDY-T1-GE3	MOSFET -30V Vds 20V Vgs SO-8
	Mfr.#: SI4425DDY-T1-GE3-CUT TAPE OMO.#: OMO-SI4425DDY-T1-GE3-CUT-TAPE-1190	신규 및 오리지널
	Mfr.#: SI4425DDY OMO.#: OMO-SI4425DDY-1190	신규 및 오리지널
	Mfr.#: SI4425DDY-T1-GE3 OMO.#: OMO-SI4425DDY-T1-GE3-VISHAY	MOSFET P-CH 30V 19.7A 8-SOIC

SI4425DDY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes