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STP28NM60ND

STP28NM60ND
Mfr. #:
STP28NM60ND
제조사:
STMicroelectronics
설명:
MOSFET N-channel 600 V 0 120 Ohm typ 24 A
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
STP28NM60ND 데이터 시트
배달:
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ECAD Model:
추가 정보:
STP28NM60ND 추가 정보 STP28NM60ND Product Details
제품 속성
속성 값
제조사:
ST마이크로일렉트로닉스
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
구멍을 통해
패키지/케이스:
TO-220-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
650 V
Id - 연속 드레인 전류:
23 A
Rds On - 드레인 소스 저항:
150 mOhms
Vgs th - 게이트 소스 임계 전압:
4 V
Vgs - 게이트 소스 전압:
25 V
Qg - 게이트 차지:
62.5 nC
Pd - 전력 손실:
190 W
구성:
하나의
포장:
튜브
시리즈:
STP28NM60ND
트랜지스터 유형:
1 N-Channel
상표:
ST마이크로일렉트로닉스
가을 시간:
27 ns
상품 유형:
MOSFET
상승 시간:
21.5 ns
공장 팩 수량:
1000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
92 ns
일반적인 켜기 지연 시간:
23.5 ns
단위 무게:
0.011640 oz
Tags
STP28NM, STP28N, STP28, STP2, STP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 600 V, 0.120 Ohm typ., 24 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220 package
***ure Electronics
Single N-Channel 650 V 0.15 O 190 W Flange Mount Power Mosfet - TO-220-3
***ical
Trans MOSFET N-CH 600V 23A 3-Pin(3+Tab) TO-220AB Tube
***r Electronics
Power Field-Effect Transistor, 23A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***icroelectronics
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in TO-220FP package
***ure Electronics
N-Channel 600 V 0.125 Ohm 45.5 nC MDmesh II Plus™ Power Mosfet - TO-220FP
***p One Stop
Trans MOSFET N-CH 650V 26A 3-Pin(3+Tab) TO-220FP Tube
***(Formerly Allied Electronics)
MOSFET N-Ch 600V 26A MDmeshIIPlusTO220FP
***ark
MOSFET, N-CH, 600V, 26A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:26A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 26A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***icroelectronics
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in TO-220 package
***ure Electronics
Single N-Channel 650 V 0.125 O 190 W Flange Mount Power Mosfet - TO-220-3
***ical
Trans MOSFET N-CH 650V 26A 3-Pin(3+Tab) TO-220AB Tube
***ark
MOSFET, N-CH, 600V, 26A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:26A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***icroelectronics
N-channel 600 V, 0.120 Ohm typ., 24 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220FP package
***ure Electronics
N-Channel 600 V 23 A 35 W Through Hole FDmesh™ II Power MOSFET - TO-220FP
***r Electronics
Power Field-Effect Transistor, 23A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ure Electronics
IPA60R125CP Series 650 V 25 A 0.125 Ohm CoolMos Power Transistor - TO-220-3
***p One Stop
Trans MOSFET N-CH 650V 25A 3-Pin(3+Tab) TO-220FP Tube
***ponent Stockers USA
25 A 600 V 0.125 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***ineon
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:650V; On Resistance Rds(on):125mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:35W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:25A; Package / Case:TO-220; Power Dissipation Pd:35W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***p One Stop Global
Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-220 Full-Pak
***ure Electronics
E Series N Channel 600 V 0.125 O 130 nC Flange Mount Power Mosfet - TO-220FP
***nell
MOSFET, N-CH, 600V, 21A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.104ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:37W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; MSL:MSL 1 - Unlimited
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***et
Trans MOSFET N-CH 600V 28A 3-Pin TO-220AB
*** Electronics
MOSFET 600V 123mOhms@10V 28A N-Ch MOSFET
*** International
MOSFET N-CH 600V 28A TO-220-3
***or
MOSFET N-CH 600V 28A TO220AB
***S
new, original packaged
***ark
N-CHANNEL 600V
N-Channel FDmesh Power MOSFETs
STMicroelectronics N-Channel FDmesh™ Power MOSFETs are a power MOSFET which belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to STMicroelectronic's strip layout and associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. These MOSFETs feature fast recovery, low input capacitance and gate charge, low gate input resistance, and extremely high dv/dt and avalanche capabilities.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
부분 # 제조 설명 재고 가격
STP28NM60ND
DISTI # V79:2366_17783229		STMicroelectronicsTrans MOSFET N-CH 600V 24A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		246
  • 1000:$3.1040
  • 500:$3.6080
  • 250:$4.0830
  • 100:$4.3000
  • 10:$4.9120
  • 1:$6.4042
STP28NM60ND
DISTI # V36:1790_06564666		STMicroelectronicsTrans MOSFET N-CH 600V 24A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		0
  • 1000000:$2.6850
  • 500000:$2.6880
  • 100000:$2.9650
  • 10000:$3.4660
  • 1000:$3.5500
STP28NM60ND
DISTI # 497-14196-5-ND		STMicroelectronicsMOSFET N-CH 600V 23A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube		30In Stock
  • 2500:$3.0932
  • 500:$3.8607
  • 100:$4.5352
  • 50:$5.2330
  • 10:$5.5350
  • 1:$6.1600
STP28NM60ND
DISTI # 26113855		STMicroelectronicsTrans MOSFET N-CH 600V 24A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		246
  • 3:$6.4042
STP28NM60ND
DISTI # STP28NM60ND		STMicroelectronicsTrans MOSFET N-CH 600V 23A 3-Pin TO-220 Tube (Alt: STP28NM60ND)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 500:€1.1900
  • 1000:€1.1900
  • 50:€1.2900
  • 100:€1.2900
  • 25:€1.3900
  • 10:€1.4900
  • 1:€1.6900
STP28NM60ND
DISTI # STP28NM60ND		STMicroelectronicsTrans MOSFET N-CH 600V 23A 3-Pin TO-220 Tube - Rail/Tube (Alt: STP28NM60ND)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 6000:$2.7900
  • 10000:$2.7900
  • 4000:$2.9900
  • 2000:$3.0900
  • 1000:$3.2900
STP28NM60ND
DISTI # 19X6241		STMicroelectronicsPTD HIGH VOLTAGE0
  • 500:$2.8800
  • 250:$2.9700
  • 100:$3.5500
  • 50:$4.1000
  • 25:$4.3700
  • 10:$4.9900
  • 1:$5.7600
STP28NM60ND
DISTI # 511-STP28NM60ND		STMicroelectronicsMOSFET N-channel 600 V 0 120 Ohm typ 24 A
RoHS: Compliant		1000
  • 1:$5.8700
  • 10:$4.9900
  • 100:$4.3200
  • 250:$4.1000
  • 500:$3.6800
  • 1000:$3.1100
영상 부분 # 설명
STP28NM60ND

Mfr.#: STP28NM60ND

OMO.#: OMO-STP28NM60ND

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OMO.#: OMO-STP28X30MOR

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STP28X8MBU

Mfr.#: STP28X8MBU

OMO.#: OMO-STP28X8MBU

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STP28X19MVL

Mfr.#: STP28X19MVL

OMO.#: OMO-STP28X19MVL

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 신규 및 오리지널
유효성
재고:
Available
주문 시:
1984
수량 입력:
STP28NM60ND의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$5.87
US$5.87
10
US$4.99
US$49.90
100
US$4.32
US$432.00
250
US$4.10
US$1 025.00
500
US$3.68
US$1 840.00
1000
US$3.11
US$3 110.00
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