IPB097N08N3GATMA1

Mfr. #:: IPB097N08N3GATMA1
제조사:: Rochester Electronics, LLC
설명:: Trans MOSFET N-CH 80V 70A 3-Pin TO-263 T/R - Bulk (Alt: IPB097N08N3GATMA1)
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IPB097N08N3GATMA1 데이터 시트
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제품 속성
속성 값

Tags: IPB097N08N3G, IPB097, IPB09, IPB0, IPB

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB097N08N3GATMA1 설명

***p One Stop: Trans MOSFET N-CH 80V 70A 3-Pin(2+Tab) TO-263 T/R

***i-Key: N-CHANNEL POWER MOSFET

***ure Electronics: Single N-Channel 100 V 8.2 mOhm 42 nC OptiMOS Power Mosfet - D2PAK

***ow.cn: Trans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) D2PAK T/R

***ment14 APAC: MOSFET, N CH, 100V, 80A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Source Voltage Vds:100V; On Resistance

***ineon SCT: Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO263-3, RoHS

***nell: MOSFET, N CH, 100V, 80A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0072ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.7V; Power Dissipation Pd: 125W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

***ure Electronics: Single N-Channel 60 V 9 mOhm 36 nC OptiMOS Power Mosfet - D2PAK

***ineon SCT: OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO263-3, RoHS

***ment14 APAC: MOSFET, N CH, 50A, 60V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):7.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:71W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:71W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon: OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

***et: Trans MOSFET N-CH 40V 70A 3-Pin(2+Tab) TO-263

***el Electronic: Power Field-Effect Transistor, 70A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

***ment14 APAC: MOSFET, N CH, 70A, 40V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:40V; On Resistance Rds(on):4.2mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:79W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:70A; Power Dissipation Pd:79W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ure Electronics: N-Channel 60 V 7 mOhm Surface Mount PowerTrench Mosfet D2PAK-3

***emi: N-Channel PowerTrench® MOSFET 60V, 80A, 7mΩ

***Yang: Trans MOSFET N-CH 60V 80A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel

***r Electronics: Power Field-Effect Transistor, 15A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ment14 APAC: MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:60V; On Resistance Rds(on):6.1mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:175W; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-263; Power Dissipation Pd:175W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***emi: N-Channel PowerTrench® MOSFET, 40V, 50A, 8.5mΩ

***ure Electronics: N-Channel 40 V 50 A 8.5 mOhm Surface Mount PowerTrench® Mosfet -TO-263AB

*** Stop Electro: Power Field-Effect Transistor, 15A I(D), 40V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***el Electronic: Chip Resistor - Surface Mount 910Ohm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 910 OHM 1% 1/10W 0402

***ment14 APAC: MOSFET, N, SMD, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:40V; On Resistance Rds(on):8.5mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:60W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Package / Case:D2-PAK; Power Dissipation Pd:60W; Power Dissipation Pd:60W; Pulse Current Idm:100A; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V

***rchild Semiconductor: This N–Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application.

Market price

부분 #	제조	설명	재고	가격
IPB097N08N3GATMA1 DISTI # IPB097N08N3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 80V 70A 3-Pin TO-263 T/R - Bulk (Alt: IPB097N08N3GATMA1) RoHS: Compliant Min Qty: 582 Container: Bulk	Americas - 0	5820:$0.5459 2910:$0.5559 1746:$0.5749 1164:$0.5969 582:$0.6189
IPB097N08N3 G DISTI # 726-IPB097N08N3G	Infineon Technologies AG	MOSFET N-Ch 80V 70A D2PAK-2 OptiMOS 3 RoHS: Compliant	0
IPB097N08N3GATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 70A I(D), 80V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	15767	1000:$0.5700 500:$0.6000 100:$0.6200 25:$0.6500 1:$0.7000

관련 상품

영상	부분 #	설명
	Mfr.#: IPB097N08N3 G OMO.#: OMO-IPB097N08N3-G	MOSFET N-Ch 80V 70A D2PAK-2 OptiMOS 3
	Mfr.#: IPB097N08N3 OMO.#: OMO-IPB097N08N3-1190	신규 및 오리지널
	Mfr.#: IPB097N08N3G OMO.#: OMO-IPB097N08N3G-1190	Trans MOSFET N-CH 80V 70A 3-Pin TO-263 T/R - Bulk (Alt: IPB097N08N3G)
	Mfr.#: IPB097N08N3GATMA1 OMO.#: OMO-IPB097N08N3GATMA1-1190	Trans MOSFET N-CH 80V 70A 3-Pin TO-263 T/R - Bulk (Alt: IPB097N08N3GATMA1)
	Mfr.#: IPB097N08N3GS OMO.#: OMO-IPB097N08N3GS-1190	신규 및 오리지널
	Mfr.#: IPB097N08N3GXT OMO.#: OMO-IPB097N08N3GXT-1190	신규 및 오리지널
	Mfr.#: IPB097N08N3 G OMO.#: OMO-IPB097N08N3-G-INFINEON-TECHNOLOGIES	IGBT Transistors MOSFET N-Ch 80V 70A D2PAK-2 OptiMOS 3

유효성

재고:: Available
주문 시:: 1000
수량 입력:

IPB097N08N3GATMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$0.94~~; ~~US$0.94~~

10: ~~US$0.90~~; ~~US$8.98~~

100: ~~US$0.85~~; ~~US$85.05~~

500: ~~US$0.80~~; ~~US$401.65~~

1000: ~~US$0.76~~; ~~US$756.00~~

시작

IPB097N08N3G 5
IPB097 6
IPB09 26
IPB0 405
IPB 1339

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IPB097N08N3GATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes