2SJ358-T1-AZ

Mfr. #:: 2SJ358-T1-AZ
제조사:: Renesas Electronics Corporation
설명:: Trans MOSFET P-CH 60V 3A 4-Pin(3+Tab) SC-62 T/R (Alt: 2SJ358-T1-AZ)
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: 2SJ358-T1-AZ 데이터 시트
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ECAD Model:

제품 속성
속성 값

Tags: 2SJ358-T, 2SJ358, 2SJ35, 2SJ3, 2SJ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

2SJ358-T1-AZ 설명

***ical: Trans MOSFET P-CH 60V 3A 4-Pin(3+Tab) SC-62 T/R

***ponent Stockers USA: 3000 mA 60 V P-CHANNEL Si SMALL SIGNAL MOSFET

***i-Key: MOSFET P-CH 60V SC-84

***egrated Device Technology: Power MOSFETs for Automotive

***ure Electronics: BSR606N Series 60 V 2.3 A SMT OptiMOS-3 Small-Signal-Transistor - PG-SC-59

***ark: Mosfet, N-Ch, 60V, 2.3A, Sc-59-3; Transistor Polarity:n Channel; Continuous Drain Current Id:2.3A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.045Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Rohs Compliant: Yes

***ineon: All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom

***(Formerly Allied Electronics): SI1025X-T1-GE3 Dual P-channel MOSFET Transistor; 0.135 A; 60 V; 6-Pin SC-89

***et Europe: Transistor MOSFET Array Dual P-CH 60V 190mA 6-Pin SOT-563F T/R

***ark: P Channel, Mosfet, -60V, -500Ma, Sc-89, Full Reel; Transistor Polarity:p Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:500Ma; On Resistance Rds(On):4Ohm; Transistor Mounting:surface Mount; No. Of Pins:6Pins Rohs Compliant: No

***nell: MOSFET, DUAL P CH, -60V, -0.19A, SC-89; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-190mA; Drain Source Voltage Vds:-60V; On Resistance Rds(on):8ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:250mW; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SC-89; No. of Pins:6; MSL:-

***(Formerly Allied Electronics): SI1026X-T1-GE3 Dual N-channel MOSFET Transistor; 0.3 A; 60 V; 6-Pin SC-89

***ure Electronics: Single N-Channel 60 V 3 O 250 mW Surface Mount Power Mosfet - SC-89-6

*** Source Electronics: MOSFET 2N-CH 60V 0.305A SC89-6 / Trans MOSFET N-CH 60V 0.305A 6-Pin SC-89 T/R

***ment14 APAC: N CHANNEL, MOSFET, 60V, 500mA, SC-89; Tr; N CHANNEL, MOSFET, 60V, 500mA, SC-89; Transistor Polarity:N Channel; Continuous Drain Current Id:500mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.4ohm; Rds(on) Test Voltage Vgs:1.4V; Threshold Voltage Vgs:20V

***ure Electronics: Si1926DL Series Dual N Channel 60 V 1.4 Ohm Surface Mount Power Mosfet - SOT-363

***et Europe: Transistor MOSFET Array Dual N-CH 60V 0.37A 6-Pin SC-70 T/R

***ark: Mosfet, Dual N Channel, 60V, 0.37A, Sot-363-6, Full Reel; Channel Type:dual N Channel; Drain Source Voltage Vds N Channel:60V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:370Ma; No. Of Pins:6Pins Rohs Compliant: No

***emi: N-Channel MOSFET, Enhancement Mode, 60V, 0.115A, 2Ω

***et Europe: Transistor MOSFET Array Dual N-CH 60V 0.115A 6-Pin SOT-363 T/R

***ure Electronics: N-Channel 60 V 7.5 Ohm SMT Enhancement Mode Field Effect Transistor - SOT-363

***trelec: Transistor Polarity = N-Channel / Configuration = Dual / Continuous Drain Current (Id) mA = 115 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) Ohm = 7.5 / Gate-Source Voltage V = 20 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-363 / Pins = 6 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 200

***et: Trans MOSFET N-CH 60V 2A 3-Pin CPH

***(Formerly Allied Electronics): MOSFET, N-CH, 60V, 2A, 170MOHM@4V, CPH3

***nell: MOSFET, N CH 60V 2A SOT346; Transistor Type:Switching; On State Resistance:220mohm; Power Dissipation:1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-346; Case Style:SOT-346; Cont Current Id:2A; Termination Type:SMD; Transistor Polarity:N; Typ Voltage Vds:60V; Typ Voltage Vgs th:1.3V; Voltage Vgs Rds on Measurement:4V

Market price

부분 #	제조	설명	재고	가격
2SJ358-T1-AZ DISTI # 2SJ358-T1-AZ	Renesas Electronics Corporation	Trans MOSFET P-CH 60V 3A 4-Pin(3+Tab) SC-62 T/R (Alt: 2SJ358-T1-AZ) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0

영상	부분 #	설명
	Mfr.#: 2SJ358 OMO.#: OMO-2SJ358-1190	신규 및 오리지널
	Mfr.#: 2SJ358 , RLZ TE-11 5.1B OMO.#: OMO-2SJ358-RLZ-TE-11-5-1B-1190	신규 및 오리지널
	Mfr.#: 2SJ358(0)-T1-AY OMO.#: OMO-2SJ358-0--T1-AY-1190	신규 및 오리지널
	Mfr.#: 2SJ358-T1 OMO.#: OMO-2SJ358-T1-1190	신규 및 오리지널
	Mfr.#: 2SJ358-T1 , MBR140SFT1G OMO.#: OMO-2SJ358-T1-MBR140SFT1G-1190	신규 및 오리지널
	Mfr.#: 2SJ358-T1-AZ OMO.#: OMO-2SJ358-T1-AZ-1190	Trans MOSFET P-CH 60V 3A 4-Pin(3+Tab) SC-62 T/R (Alt: 2SJ358-T1-AZ)
	Mfr.#: 2SJ358C(0)-T1-AY OMO.#: OMO-2SJ358C-0--T1-AY-1190	신규 및 오리지널
	Mfr.#: 2SJ358C(0)-T1-AZ OMO.#: OMO-2SJ358C-0--T1-AZ-RENESAS-ELECTRONICS-AMERICA	신규 및 오리지널
	Mfr.#: 2SJ358C-T1-AZ OMO.#: OMO-2SJ358C-T1-AZ-1190	신규 및 오리지널

2SJ358-T1-AZ

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes