SIA436DJ-T1-GE3

Mfr. #:: SIA436DJ-T1-GE3
제조사:: Vishay
설명:: MOSFET N-CH 8V 12A SC70-6L
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SIA436DJ-T1-GE3 데이터 시트
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ECAD Model:
추가 정보:: SIA436DJ-T1-GE3 추가 정보

제품 속성
속성 값

제조사: 비쉐이 실리콘

제품 카테고리: FET - 단일

시리즈: 트렌치FETR

포장: Digi-ReelR 대체 패키징

부분 별칭: SIA436DJ-GE3

장착 스타일: SMD/SMT

패키지 케이스: PowerPAKR SC-70-6

기술: 시

작동 온도: -55°C ~ 150°C (TJ)

장착형: 표면 실장

채널 수: 1 Channel

공급자-장치-패키지: PowerPAKR SC-70-6 Single

구성: 하나의

FET형: MOSFET N-채널, 금속 산화물

파워맥스: 19W

트랜지스터형: 1 N-Channel

드레인-소스 전압 Vdss: 8V

입력-커패시턴스-Ciss-Vds: 1508pF @ 4V

FET 기능: 기준

Current-Continuous-Drain-Id-25°C: 12A (Tc)

Rds-On-Max-Id-Vgs: 9.4 mOhm @ 15.7A, 4.5V

Vgs-th-Max-Id: 800mV @ 250μA

Gate-Charge-Qg-Vgs: 25.2nC @ 5V

Pd 전력 손실: 19 W

Vgs 게이트 소스 전압: 5 V

Id-연속-드레인-전류: 12 A

Vds-드레인-소스-고장-전압: 8 V

Rds-On-Drain-Source-Resistance: 36 mOhms

트랜지스터 극성: N-채널

Tags: SIA436, SIA43, SIA4, SIA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIA436DJ-T1-GE3 추가 정보

SIA436DJ N-Channel 8V TrenchFET® MOSFET: Vishay Siliconix's SIA436DJ N-Channel 8V TrenchFET® MOSFET is offered in the compact PowerPAK SC-70 package, and is designed to save valuable PCB space in portable electronics. This MOSFET's on-resistance values are 18% lower than previous generation solutions, and up to 64% lower than the closest competing n-channel device in the 2mm by 2mm footprint area. This ultra-low on resistance translates into lower conduction losses for reduced power consumption, in addition to a lower voltage drop across the load switch to prevent unwanted under-voltage lockout. The SiA436DJ's on resistance ratings down to 1.2V simplify circuit design by allowing the MOSFET to work with the low voltage power rails common in handheld devices, providing longer battery operation between charges.Learn More

Market price

부분 #	제조	설명	재고	가격
SIA436DJ-T1-GE3 DISTI # V72:2272_09216838	Vishay Intertechnologies	Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	207	250:$0.3343 100:$0.3353 25:$0.4126 10:$0.4142 1:$0.4872
SIA436DJ-T1-GE3 DISTI # SIA436DJ-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 8V 12A SC70-6L RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	12004In Stock	1000:$0.2900 500:$0.3626 100:$0.4895 10:$0.6340 1:$0.7300
SIA436DJ-T1-GE3 DISTI # SIA436DJ-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 8V 12A SC70-6L RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	12004In Stock	1000:$0.2900 500:$0.3626 100:$0.4895 10:$0.6340 1:$0.7300
SIA436DJ-T1-GE3 DISTI # SIA436DJ-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 8V 12A SC70-6L RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	9000In Stock	3000:$0.2552
SIA436DJ-T1-GE3 DISTI # 27550109	Vishay Intertechnologies	Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	3000	3000:$0.2689
SIA436DJ-T1-GE3 DISTI # 26596996	Vishay Intertechnologies	Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	207	250:$0.3343 100:$0.3353 29:$0.4126
SIA436DJ-T1-GE3 DISTI # SIA436DJ-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 T/R (Alt: SIA436DJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 15000	3000:$3.2120 6000:$2.2152 9000:$1.6472 15000:$1.3383 30000:$1.2121 75000:$1.1680 150000:$1.1270
SIA436DJ-T1-GE3 DISTI # SIA436DJ-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA436DJ-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0
SIA436DJ-T1-GE3 DISTI # 99W9414	Vishay Intertechnologies	MOSFET, N CHANNEL, 8V, 12A, POWERPAK SC70-6, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:8V,On Resistance Rds(on):0.0078ohm,Rds(on) Test Voltage Vgs:4.5V,No. of Pins:6Pins , RoHS Compliant: Yes	0	1:$0.2370 3000:$0.2360 6000:$0.2240 12000:$0.1990
SIA436DJ-T1-GE3 DISTI # 63W4103	Vishay Intertechnologies	MOSFET Transistor, N Channel, 12 A, 8 V, 0.0078 ohm, 4.5 V, 350 mV , RoHS Compliant: Yes	8702	1:$0.6400 10:$0.5110 25:$0.4700 50:$0.4290 100:$0.3880 250:$0.3540 500:$0.3200 1000:$0.2560
SIA436DJ-T1-GE3 DISTI # 70459575	Vishay Siliconix	MOSFET N-CH 8V 12A SC70-6L RoHS: Compliant	0	3000:$0.6260 6000:$0.4960
SIA436DJ-T1-GE3 DISTI # 78-SIA436DJ-T1-GE3	Vishay Intertechnologies	MOSFET 8V Vds 5V Vgs PowerPAK SC-70 RoHS: Compliant	2620	1:$0.6400 10:$0.5110 100:$0.3880 500:$0.3200 1000:$0.2560 3000:$0.2320 6000:$0.2170
SIA436DJ-T1-GE3	Vishay Intertechnologies	MOSFET 8V Vds 5V Vgs PowerPAK SC-70 RoHS: Compliant	Americas -

영상	부분 #	설명
	Mfr.#: SIA436DJ-T1-GE3 OMO.#: OMO-SIA436DJ-T1-GE3	MOSFET 8V Vds 5V Vgs PowerPAK SC-70
	Mfr.#: SIA436DJ-T4-GE3 OMO.#: OMO-SIA436DJ-T4-GE3	MOSFET 8V Vds 5V Vgs PowerPAK SC-70
	Mfr.#: SIA436DJ-T1-GE3 OMO.#: OMO-SIA436DJ-T1-GE3-VISHAY	MOSFET N-CH 8V 12A SC70-6L
	Mfr.#: SIA436DJT1GE3 OMO.#: OMO-SIA436DJT1GE3-1190	신규 및 오리지널

SIA436DJ-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes