HIP2123FRTAZ-T

HIP2123FRTAZ-T
Mfr. #:
HIP2123FRTAZ-T
제조사:
Renesas / Intersil
설명:
Gate Drivers 100V 2A PEAK HALF BRDG DRV W/DELAY TMR
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
HIP2123FRTAZ-T 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
HIP2123FRTAZ-T DatasheetHIP2123FRTAZ-T Datasheet (P4-P6)HIP2123FRTAZ-T Datasheet (P7-P9)HIP2123FRTAZ-T Datasheet (P10-P12)HIP2123FRTAZ-T Datasheet (P13-P15)HIP2123FRTAZ-T Datasheet (P16)
ECAD Model:
제품 속성
속성 값
제조사:
르네사스 전자
제품 카테고리:
게이트 드라이버
RoHS:
Y
장착 스타일:
SMD/SMT
패키지/케이스:
TDFN-EP-10
드라이버 수:
2 Driver
출력 수:
2 Output
출력 전류:
2 A
상승 시간:
600 ns
가을 시간:
600 ns
공급 전압 - 최대:
14 V
전파 지연 - 최대:
50 ns
작동 공급 전류:
4 mA
Pd - 전력 손실:
3 W
최소 작동 온도:
- 40 C
최대 작동 온도:
+ 125 C
시리즈:
HIP2123
포장:
특징:
독립적 인
키:
0.75 mm
길이:
4 mm
기술:
너비:
4 mm
상표:
르네사스 / 인터실
습기에 민감한:
상품 유형:
게이트 드라이버
공장 팩 수량:
6000
하위 카테고리:
PMIC - 전원 관리 IC
단위 무게:
0.001764 oz
Tags
HIP2123, HIP212, HIP21, HIP2, HIP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ersil
100V, 2A Peak, High Frequency Half-Bridge Drivers with Rising Edge Delay Timer
***et
MOSFET DRVR 2A 2-OUT Hi/Lo Side Half Brdg Non-Inv 10-Pin TDFN T/R
***i-Key
IC HALF BRIDGE FET DRIVER 10TDFN
부분 # 제조 설명 재고 가격
HIP2123FRTAZ-T
DISTI # HIP2123FRTAZ-T-ND
Renesas Electronics CorporationIC HALF BRIDGE FET DRIVER 10TDFN
RoHS: Compliant
Min Qty: 6000
Container: Tape & Reel (TR)
Limited Supply - Call
    HIP2123FRTAZ-T
    DISTI # 968-HIP2123FRTAZ-T
    Renesas Electronics CorporationGate Drivers 100V 2A PEAK HALF BRDG DRV W/DELAY TMR
    RoHS: Compliant
    0
      영상 부분 # 설명
      HIP2123FRTAZ-T

      Mfr.#: HIP2123FRTAZ-T

      OMO.#: OMO-HIP2123FRTAZ-T

      Gate Drivers 100V 2A PEAK HALF BRDG DRV W/DELAY TMR
      HIP2123FRTBZ-T

      Mfr.#: HIP2123FRTBZ-T

      OMO.#: OMO-HIP2123FRTBZ-T

      Gate Drivers 100V 2A PEAK HALF BRDG DRV W/DELAY TMR
      HIP2123FRTBZ

      Mfr.#: HIP2123FRTBZ

      OMO.#: OMO-HIP2123FRTBZ

      Gate Drivers 100V 2A PEAK HALF BRDG DRV W/DELAY TMR
      HIP2123FRTAZ-T

      Mfr.#: HIP2123FRTAZ-T

      OMO.#: OMO-HIP2123FRTAZ-T-INTERSIL

      Gate Drivers 100V 2A PEAK HALF BRDG DRV W/DELAY TMR
      HIP2123FRTAZ

      Mfr.#: HIP2123FRTAZ

      OMO.#: OMO-HIP2123FRTAZ-INTERSIL

      Gate Drivers 100V 2A PEAK HALF BRDG DRV W/DELAY TMR
      유효성
      재고:
      Available
      주문 시:
      4000
      수량 입력:
      HIP2123FRTAZ-T의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      시작
      최신 제품
      • ISL80505/10 High-Performance LDOs
        The Intersil ISL80505/10 is a single-output low-dropout voltage regulator (LDO) capable of sourcing up to 500 mA or 1 A output current.
      • ISL32600E Transceivers
        Features IEC61000 ESD protection on RS-485 IO pins: ±5 kV and up to 65 mV hysteresis for improved noise immunity.
      • ISL683xx Digital PWM Controllers
        Renesas' ISL683xx single-out PWM controllers have integrated MOSFET drivers with PWM outputs that simplify designing power supplies.
      • ISL95338 Bidirectional Buck-Boost Voltage Regulato
        Intersil's ISL95338 bidirectional buck-boost voltage regulator offers buck-boost voltage regulation and protection features including OCP, OVP, UVP, and OTP.
      • Compare HIP2123FRTAZ-T
        HIP2123FRTAZ vs HIP2123FRTAZT vs HIP2123FRTBZ
      • ISL78227/9 Boost Controllers
        Intersil's ISL78227/9 are AEC-Q100 Grade 1, 2-phase 55 V synchronous boost controllers intended to simplify the design of high power boost applications.
      Top