IKW08T120FKSA1

Mfr. #:: IKW08T120FKSA1
제조사:: Infineon Technologies
설명:: IGBT Transistors LOW LOSS DuoPack 1200V 8A
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IKW08T120FKSA1 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: IGBT 트랜지스터

RoHS:: Y

기술:: 시

패키지/케이스:: TO-247-3

장착 스타일:: 구멍을 통해

구성:: 하나의

컬렉터-이미터 전압 VCEO 최대:: 1200 V

수집기-이미터 포화 전압:: 1.7 V

최대 게이트 이미터 전압:: 20 V

25C에서 연속 수집기 전류:: 16 A

Pd - 전력 손실:: 70 W

최소 작동 온도:: - 40 C

최대 작동 온도:: + 150 C

시리즈:: 트렌치스톱 IGBT

포장:: 튜브

상표:: 인피니언 테크놀로지스

게이트-이미터 누설 전류:: 100 nA

상품 유형:: IGBT 트랜지스터

공장 팩 수량:: 240

하위 카테고리:: IGBT

상표명:: 트렌치스톱

부품 번호 별칭:: IKW08T120 IKW8T12XK SP000013885

단위 무게:: 0.172842 oz

Tags: IKW08, IKW0, IKW

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IKW08T120FKSA1 설명

***p One Stop: Trans IGBT Chip N-CH 1.2KV 16A 3-Pin(3+Tab) TO-247

***ment14 APAC: IGBT, N, 1200V, 8A, TO-247; Transistor Type:IGBT; DC Collector Current:16A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:70W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:8A; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:70W; Power Dissipation Pd:70W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV

***ineon SCT: The 1200 V, 8 A hard-switching TRENCHSTOP™ IGBT3 co-packed with free-wheeling diode in a TO247 package, provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO247-3, RoHS

***trelec: Configuration = Single / Continuous Collector Current (Ic) A = 8 / Collector-Emitter Voltage (Vceo) kV = 1.2 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.7 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 70 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled HE diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar inverters; Motor control; Major home appliances; Welding; Other hard switching applications

***et: Trans IGBT Chip N-CH 1.2KV 16A 3-Pin(3+Tab) TO-247

***ark: Igbt, Single, 1.2Kv, 16A, To-247; Dc Collector Current:16A; Collector Emitter Saturation Voltage Vce(On):1.7V; Power Dissipation Pd:70W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes

***ineon SCT: The 1200 V, 8 A single TRENCHSTOP™ IGBT3 in a TO-247 package, provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO247-3, RoHS

***trelec: Configuration = Single / Continuous Collector Current (Ic) A = 16 / Collector-Emitter Voltage (Vceo) kV = 1.2 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 2.2 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 70 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled HE diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar inverters; Motor control; Major home appliances; Welding; Other hard switching applications

***ical: Trans IGBT Chip N-CH 1.2KV 16.5A 3-Pin(3+Tab) TO-247

***i-Key: IGBT, 16.5A, 1200V, N-CHANNEL

*** Electronic Components: IGBT 1200V 16.5A 125W TO247

***el Nordic: Contact for details

***ment14 APAC: IGBT, NPT, 1200V, 16.5A, 125W, TO247; Transistor Type:IGBT; DC Collector Current:16.5A; Collector Emitter Voltage Vces:3.1V; Power Dissipation Pd:125W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:(Not Applicable); SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C; Pulsed Current Icm:27A; Rise Time:31ns

***ource: 43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode43A, 1200V,,NPTN£¨

*** Source Electronics: Trans IGBT Chip N-CH 1200V 43A 298000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 1200V 43A 298W TO247

***ure Electronics: HGTG11N120CND Series 1200 V 43 A Flange Mount NPT N-Channel IGBT-TO-247

***ment14 APAC: IGBT, N; Transistor Type:IGBT; DC Collector Current:43A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:298W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:43A; Package / Case:TO-247; Power Dissipation Max:298W; Power Dissipation Pd:298W; Termination Type:SMD; Transistor Polarity:N Channel; Voltage Vces:1.2kV

***rchild Semiconductor: HGTG11N120CND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.

***ical: Trans IGBT Chip N-CH 1200V 21A 167000mW 3-Pin(3+Tab) TO-247 Rail

***inecomponents.com: 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

***nell: IGBT, 1200V, 21A; DC Collector Current: 21A; Collector Emitter Saturation Voltage Vce(on): 2.7V; Power Dissipation Pd: 167W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operati

***rchild Semiconductor: HGTG5N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies.

***ical: Trans IGBT Chip N=-CH 1200V 35A 298000mW 3-Pin(3+Tab) TO-247 Rail

***inecomponents.com: 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

***ure Electronics: HGTG10N120BND Series 1200 V 35 A Flange Mount NPT N-Channel IGBT-TO-247

***ment14 APAC: IGBT,N CH,NPT,1200V,35A,TO-247; Transistor Type:IGBT; DC Collector Current:35A; Collector Emitter Voltage Vces:2.7V; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Power Dissipation Max:298W

***rchild Semiconductor: HGTG10N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.

***omponent: Trans IGBT Chip N-CH 1.2KV 20A 3-Pin TO-247 Tube (Alt: SP001150026)

***nell: IGBT, SINGLE, 1.2KV, 40A, TO-247; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 288W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pi

***ineon SCT: The 5th generation of reverse conducting 1200 V, 20 A TRENCHSTOP™ 5 IGBTs with monolithically integrated reverse conducting diode in a TO247 package has been optimized for the demanding requirements of Induction Cooking applications, PG-TO247-3, RoHS

***ineon: The latest generation of reverse conducting IGBTs has been optimized for the demanding requirements of Induction Cooking applications. The new 20A RC-H5 devices complement the previous generation of reverse conduction IGBTs and extend the performance leadership of the RC-H family, focusing on system efficiency and reliability. | Summary of Features: Switching losses reduced by 30%; Very low conduction losses; Reduced turn-on current spike up to 10%; T j(max) = 175C; Soft current turn-off waveforms for low EMI | Benefits: Increased switching frequency; Lowest power dissipation; Better thermal management for higher reliability; Lower EMI filtering requirements; Reduced system costs; Highest reliability against peak current | Target Applications: Induction cooking stoves; Inverterized microwave ovens; Induction rice cookers; Induction water heaters; Other resonant switching topologies

Market price

부분 #	제조	설명	재고	가격
IKW08T120FKSA1 DISTI # V36:1790_06378431	Infineon Technologies AG	Trans IGBT Chip N-CH 1.2KV 16A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	0	240000:$1.7990 120000:$1.8000 24000:$1.8600 2400:$1.9470 240:$1.9600
IKW08T120FKSA1 DISTI # IKW08T120FKSA1-ND	Infineon Technologies AG	IGBT 1200V 16A 70W TO247-3 RoHS: Compliant Min Qty: 1 Container: Tube	3In Stock	2640:$2.1616 720:$2.6912 240:$3.1613 25:$3.6476 10:$3.8580 1:$4.3000
IKW08T120XK DISTI # IKW08T120FKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 1.2KV 16A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IKW08T120FKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	960:$1.4900 1440:$1.4900 2400:$1.4900 480:$1.5900 240:$1.6900
IKW08T120FKSA1 DISTI # 61M6730	Infineon Technologies AG	IGBT, N, 1200V, 8A, TO-247,DC Collector Current:16A,Collector Emitter Saturation Voltage Vce(on):2.2V,Power Dissipation Pd:70W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes	315	500:$2.5900 250:$2.8800 100:$3.0400 50:$3.1900 25:$3.3500 10:$3.5000 1:$4.1200
IKW08T120 DISTI # 726-IKW08T120	Infineon Technologies AG	IGBT Transistors LOW LOSS DuoPack 1200V 8A RoHS: Compliant	330	1:$4.0800 10:$3.4700 100:$3.0100 250:$2.8500 500:$2.5600
IKW08T120FKSA1 DISTI # 726-IKW08T120FKSA1	Infineon Technologies AG	IGBT Transistors LOW LOSS DuoPack 1200V 8A RoHS: Compliant	350	1:$4.0800 10:$3.4700 100:$3.0100 250:$2.8500 500:$2.5600
IKW08T120FKSA1	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, TO-247AC RoHS: Compliant	34	1000:$1.4000 500:$1.4700 100:$1.5300 25:$1.5900 1:$1.7200
IKW08T120FKSA1 DISTI # 8922129	Infineon Technologies AG	IGBT TRENCHSTOP NCHANNEL 1.2KV 16A TO247, PK	28	500:£1.4550 200:£1.4850 100:£1.5150 20:£1.7380 4:£2.2780
IKW08T120FKSA1 DISTI # 8922129P	Infineon Technologies AG	IGBT TRENCHSTOP NCHANNEL 1.2KV 16A TO247, TU	160	500:£1.4550 200:£1.4850 100:£1.5150 20:£1.7380
IKW08T120FKSA1 DISTI # 1471744	Infineon Technologies AG	IGBT, N, 1200V, 8A, TO-247 RoHS: Compliant	315	500:$3.8600 250:$4.2900 100:$4.5400 10:$5.2300 1:$6.1500
IKW08T120FKSA1 DISTI # 1471744	Infineon Technologies AG	IGBT, N, 1200V, 8A, TO-247	585	500:£1.8800 250:£2.0900 100:£2.2000 10:£2.5500 1:£3.5100

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IKW08T120FKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes