MW6S004NT1

Mfr. #:: MW6S004NT1
제조사:: NXP / Freescale
설명:: RF MOSFET Transistors HV6 1950MHZ 2W PLD1.5N
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: MW6S004NT1 데이터 시트
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ECAD Model:

제품 속성
속성 값

제조사:: NXP

제품 카테고리:: RF MOSFET 트랜지스터

RoHS:: E

트랜지스터 극성:: N-채널

기술:: 시

Vds - 드레인 소스 항복 전압:: 68 V

얻다:: 18 dB

출력 파워:: 4 W

최소 작동 온도:: - 65 C

최대 작동 온도:: + 150 C

장착 스타일:: SMD/SMT

패키지/케이스:: PLD-1.5-3

포장:: 릴

구성:: 하나의

키:: 1.83 mm

길이:: 6.73 mm

동작 주파수:: 2 GHz

시리즈:: MW6S004NT1

너비:: 5.97 mm

상표:: NXP / 프리스케일

채널 모드:: 상승

습기에 민감한:: 네

상품 유형:: RF MOSFET 트랜지스터

공장 팩 수량:: 1000

하위 카테고리:: MOSFET

Vgs - 게이트 소스 전압:: 12 V

Vgs th - 게이트 소스 임계 전압:: 2 V

부품 번호 별칭:: 935320257515

단위 무게:: 0.009877 oz

Tags: MW6S004NT1, MW6S004NT, MW6S004N, MW6S004, MW6S00, MW6S0, MW6S, MW6

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MW6S004NT1 설명

***W: RF Power Transistor,1 to 2000 MHz, 4 W, Typ Gain in dB is 18 @ 1960 MHz, 28 V, LDMOS, SOT1811

***ment14 APAC: RF MOSFET, N CHANNEL, 68V, 466-03; Transistor Type:RF MOSFET; Drain Source Voltage Vds:68V; Operating Frequency Min:1MHz; Operating Frequency Max:2GHz; RF Transistor Case:PLD-1.5; No. of Pins:4; Filter Terminals:Surface Mount

***ark: RF MOSFET, N CHANNEL, 68V, 466-03; Transistor Type:RF FET; Drain Source Voltage, Vds:68V; RF Transistor Case:466; Gain:18dB; Gate-Source Voltage:12V; Leaded Process Compatible:Yes; Operating Frequency Max:1960MHz ;RoHS Compliant: Yes

***nell: TRANSISTOR, RF, 68V, PLD-1.5-4; Drain Source Voltage Vds: 68VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 1MHz; Operating Frequency Max: 2000MHz; RF Transistor Case: PLD-1.5; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)

***ure Electronics: Single N-Channel 60 V 11 mOhm 33 nC OptiMOS Power Mosfet - TDSON-8

*** Source Electronics: Trans MOSFET N-CH 60V 50A 8-Pin TDSON EP T/R / OptiMOS3 Power-Transistor

***ineon SCT: OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TDSON-8, RoHS

***nell: MOSFET, N-CH, 60V, 50A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.009ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:50W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SuperSOT; No. of Pins:8; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C

***ineon: OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

***emi: N-Channel MOSFET, Logic Level Enhancement Mode, 50V 0.22A, 1.6Ω

***(Formerly Allied Electronics): Transistor, MOSFET, N-channel, 50V, 0.22A, logic level, fast switching, SOT23 | ON Semiconductor BSS138K

***inecomponents.com: SOT23, 50V NCh Enhancement Mode Field Effect Transistor with

***Yang: Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R - Tape and Reel

***el Electronic: Surface Mount Ceramic Multilayer Capacitor 0.1uF 10% X7R 50V 0805 Paper T/R

***ment14 APAC: MOSFET, N-CH, 50V, 0.22A, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:220mA; Source Voltage Vds:50V; On Resistance

***r Electronics: Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***nell: MOSFET, N-CH, 50V, 0.22A, SOT-23-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 220mA; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 1.6ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 600mV; Power Dissipation Pd: 350mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 220 / Drain-Source Voltage (Vds) V = 50 / ON Resistance (Rds(on)) Ohm = 2.5 / Gate-Source Voltage V = 12 / Fall Time ns = 35 / Rise Time ns = 5 / Turn-OFF Delay Time ns = 60 / Turn-ON Delay Time ns = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 350

*** Source Electronics: Trans MOSFET N-CH 50V 0.16A 3-Pin SOT-523 T/R / MOSFET N-CH 50V 160MA SOT-523

***(Formerly Allied Electronics): N-Channel Enhancement MOSFET SOT-23 | Diodes Inc DMN55D0UT-7

***ure Electronics: DMN55D0UT Series 50 V 160 mA N-Channel Enhancement Mode Mosfet - SOT-523

***ark: Mosfet, N-Ch, 50V, Sot-523-3; Transistor Polarity:N Channel; Continuous Drain Current Id:160Ma; Drain Source Voltage Vds:50V; On Resistance Rds(On):3.1Ohm; Rds(On) Test Voltage Vgs:4V; Threshold Voltage Vgs:800Mv; Power Dissipation Rohs Compliant: Yes |Diodes Inc. DMN55D0UT-7

***(Formerly Allied Electronics): Transistor, dual N-channel, enhancement mode, 50V, 0.3A, MOSFET, SOT-23 | Diodes Inc DMN53D0U-7

***ure Electronics: N-Channel 50 V 2 Ohm 520 mW Surface Mount Mosfet - SOT-23

***ical: Trans MOSFET N-CH 50V 0.3A 3-Pin SOT-23 T/R

***icontronic: Small Signal Field-Effect Transistor, 0.3A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***S: French Electronic Distributor since 1988

***ical: N-Channel Enhancement Mode MOSFET Plus PNP Transistor Automotive 6-Pin SOT-363 T/R

***ure Electronics: DMB53D0UDW series 50 V 4 Ohm N-Channel Mosfet + NPN Transistor - SOT-363

***ark: Transistor, Npn/N-Ch, 50V, 0.16A, Sot363 Rohs Compliant: Yes |Diodes Inc. DMB53D0UDW-7

***-Wing Technology: Tape & Reel (TR) Surface Mount 3 RoHS Compliant Mosfet Transistor 53A 50V 20Ohm 125C TJ

***et: Trans MOSFET N-CH 50V 0.1A 3-Pin CP T/R

***nell: 2SK536 - MOSFET N-CHANNEL 50V 0.1A;

Market price

부분 #	제조	설명	재고	가격
MW6S004NT1 DISTI # V72:2272_07190054	NXP Semiconductors	Trans RF MOSFET N-CH 68V 3-Pin PLD-1.5 T/R RoHS: Compliant	1134	1000:$6.5540 500:$6.8690 250:$7.5180 100:$7.9330 25:$9.0269 10:$9.8760 1:$10.7190
MW6S004NT1 DISTI # MW6S004NT1CT-ND	NXP Semiconductors	FET RF 68V 1.96GHZ PLD-1.5 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1518In Stock	500:$8.0730 100:$9.0751 10:$10.7450 1:$11.6900
MW6S004NT1 DISTI # MW6S004NT1DKR-ND	NXP Semiconductors	FET RF 68V 1.96GHZ PLD-1.5 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1518In Stock	500:$8.0730 100:$9.0751 10:$10.7450 1:$11.6900
MW6S004NT1 DISTI # MW6S004NT1TR-ND	NXP Semiconductors	FET RF 68V 1.96GHZ PLD-1.5 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	1000In Stock	1000:$7.8944
MW6S004NT1 DISTI # 27493967	NXP Semiconductors	Trans RF MOSFET N-CH 68V 3-Pin PLD-1.5 T/R RoHS: Compliant	1695	1000:$6.2568 500:$6.3425 250:$6.4306 100:$6.5211 50:$6.6143 25:$6.7101 11:$6.8088
MW6S004NT1 DISTI # 25767000	NXP Semiconductors	Trans RF MOSFET N-CH 68V 3-Pin PLD-1.5 T/R RoHS: Compliant	1134	1000:$6.5540 500:$6.8690 250:$7.5180 100:$7.9330 25:$9.0270 10:$9.8760 1:$10.7190
MW6S004NT1 DISTI # 27494153	NXP Semiconductors	Trans RF MOSFET N-CH 68V 3-Pin PLD-1.5 T/R RoHS: Compliant	1000	1000:$5.8375
MW6S004NT1 DISTI # 29753929	NXP Semiconductors	Trans RF MOSFET N-CH 68V 3-Pin PLD-1.5 T/R RoHS: Compliant	73	5:$11.6000
MW6S004NT1 DISTI # MW6S004NT1	NXP Semiconductors	Trans MOSFET N-CH 68V 3-Pin PLD-1.5 T/R (Alt: MW6S004NT1) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Asia - 0	1000:$5.7408 2000:$5.5813 3000:$5.4305 5000:$5.2876 10000:$5.2189 25000:$5.1520 50000:$5.0232
MW6S004NT1 DISTI # MW6S004NT1	NXP Semiconductors	Trans MOSFET N-CH 68V 3-Pin PLD-1.5 T/R - Tape and Reel (Alt: MW6S004NT1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$6.5900 2000:$6.5900 4000:$6.5900 6000:$6.4900 10000:$6.4900
MW6S004NT1 DISTI # 81K3648	NXP Semiconductors	Trans MOSFET N-CH 68V 3-Pin PLD-1.5 T/R - Tape and Reel (Alt: 81K3648) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1:$6.2400
MW6S004NT1 DISTI # 34R2431	NXP Semiconductors	Trans MOSFET N-CH 68V 3-Pin PLD-1.5 T/R - Product that comes on tape, but is not reeled (Alt: 34R2431) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$11.0800 10:$10.1600 25:$9.2400 50:$8.7800 100:$8.3100 250:$7.6200 500:$6.9300
MW6S004NT1 DISTI # 34R2431	NXP Semiconductors	RF MOSFET, N CHANNEL, 68V, 466-03,Drain Source Voltage Vds:68V,Continuous Drain Current Id:-,Power Dissipation Pd:-,Operating Frequency Min:1MHz,Operating Frequency Max:2GHz,RF Transistor Case:PLD-1.5,No. of Pins:4Pins , RoHS Compliant: Yes	1695	1:$4.6300 10:$4.6300 25:$4.6300 50:$4.6300 100:$4.6300 250:$4.6300 500:$4.6300
MW6S004NT1 DISTI # 81K3648	NXP Semiconductors	RF MOSFET, N CHANNEL, 68V, 466-03, FULL REEL,Drain Source Voltage Vds:68V,Continuous Drain Current Id:-,Power Dissipation Pd:-,Operating Frequency Min:1MHz,Operating Frequency Max:2GHz,RF Transistor Case:PLD-1.5,Gain:18dB , RoHS Compliant: Yes	1000	1:$4.6700 1000:$4.6700
MW6S004NT1 DISTI # 841-MW6S004NT1	NXP Semiconductors	RF MOSFET Transistors HV6 1950MHZ 2W PLD1.5N RoHS: Compliant	1036	1:$11.0800 10:$10.1600 25:$9.2400 100:$8.3100 250:$7.6200 500:$6.9300 1000:$6.2400
MW6S004NT1 DISTI # MW6S004NT1	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	786	1:$11.5700 10:$10.4600 25:$9.8900
MW6S004NT1 DISTI # 2674349	NXP Semiconductors	RF MOSFET, N CHANNEL, 68V, 466-03, FULL RoHS: Compliant	1000	1000:£5.4900
MW6S004NT1 DISTI # 2776246	NXP Semiconductors	TRANSISTOR, RF, 68V, PLD-1.5-4 RoHS: Compliant	646	1:$18.9000 5:$17.1000 10:$15.2800 50:$14.0800 100:$13.3000 250:$12.6000
MW6S004NT1 DISTI # 2674349	NXP Semiconductors	RF MOSFET, N CHANNEL, 68V, 466-03, FULL REEL RoHS: Compliant	1000	1000:$12.5000
MW6S004NT1 DISTI # C1S233100208775	NXP Semiconductors	Trans RF MOSFET N-CH 68V 3-Pin PLD-1.5 T/R RoHS: Compliant	1134	250:$7.5180 100:$7.9330 25:$9.0269 10:$9.8760 1:$10.7190
MW6S004NT1 DISTI # C1S233100176573	NXP Semiconductors	Trans RF MOSFET N-CH 68V 3-Pin PLD-1.5 T/R RoHS: Compliant	73	50:$11.4000 10:$13.1000 5:$15.9000 3:$19.7000

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MW6S004NT1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes