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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| IPB096N03LGATMA1 DISTI # IPB096N03LGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 30V 35A TO-263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| IPB096N03LGATMA1 DISTI # IPB096N03LGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 30V 35A TO-263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| IPB096N03LGATMA1 DISTI # IPB096N03LGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 30V 35A TO-263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| IPB096N03L G DISTI # IPB096N03LG | Infineon Technologies AG | Trans MOSFET N-CH 30V 35A 3-Pin(2+Tab) TO-263 - Bulk (Alt: IPB096N03LG) RoHS: Compliant Min Qty: 1137 Container: Bulk | Americas - 0 |
|
| IPB096N03LGATMA1 DISTI # IPB096N03LGATMA1 | Infineon Technologies AG | N-KANAL POWER MOS - Bulk (Alt: IPB096N03LGATMA1) Min Qty: 893 Container: Bulk | Americas - 0 |
|
| IPB096N03L G DISTI # 726-IPB096N03LG | Infineon Technologies AG | MOSFET N-Ch 30V 35A D2PAK-2 OptiMOS 3 RoHS: Compliant | 0 | |
| IPB096N03LG | Infineon Technologies AG | Power Field-Effect Transistor, 35A I(D), 30V, 0.0141ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 402 |
|
| IPB096N03LGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 35A I(D), 30V, 0.0141ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 5000 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: IPB090N06N3GATMA1 OMO.#: OMO-IPB090N06N3GATMA1 |
MOSFET MV POWER MOS |
|
Mfr.#: IPB090N06N3GATMA1 |
MOSFET N-CH 60V 50A TO263-3 |
|
Mfr.#: IPB091N06NG OMO.#: OMO-IPB091N06NG-1190 |
MOSFET N-Ch 60V 80A D2PAK-2 |
|
|
Mfr.#: IPB093N04L G OMO.#: OMO-IPB093N04L-G-1190 |
신규 및 오리지널 |
|
|
Mfr.#: IPB093N04LG OMO.#: OMO-IPB093N04LG-1190 |
Power Field-Effect Transistor, 46A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
|
Mfr.#: IPB096N03LG OMO.#: OMO-IPB096N03LG-1190 |
Power Field-Effect Transistor, 35A I(D), 30V, 0.0141ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
|
Mfr.#: IPB096N03LGATMA1 |
MOSFET N-CH 30V 35A TO-263-3 |
|
|
Mfr.#: IPB097N08N3GXT OMO.#: OMO-IPB097N08N3GXT-1190 |
신규 및 오리지널 |
|
|
Mfr.#: IPB09N03LA G |
MOSFET N-CH 25V 50A D2PAK |
|
|
Mfr.#: IPB09N03LAT |
MOSFET N-CH 25V 50A D2PAK |