BFT25,215

Mfr. #:: BFT25,215
제조사:: NXP Semiconductors
설명:: RF Bipolar Transistors TAPE7 TNS-RFSS
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: BFT25,215 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: BFT25,215 Datasheet BFT25,215 Datasheet (P4-P6)BFT25,215 Datasheet (P7-P9)BFT25,215 Datasheet (P10)
ECAD Model:
추가 정보:: BFT25,215 추가 정보 BFT25,215 Product Details

제품 속성
속성 값

제조사:: NXP

제품 카테고리:: RF 양극성 트랜지스터

RoHS:: Y

트랜지스터 유형:: 양극성

기술:: 시

트랜지스터 극성:: NPN

DC 수집기/기본 이득 hfe 최소:: 20

컬렉터-이미터 전압 VCEO 최대:: 5 V

이미터-베이스 전압 VEBO:: 2 V

지속적인 수집가 전류:: 6.5 mA

최소 작동 온도:: - 65 C

최대 작동 온도:: + 150 C

구성:: 하나의

장착 스타일:: SMD/SMT

패키지/케이스:: SOT-23

포장:: 릴

컬렉터-베이스 전압 VCBO:: 8 V

DC 전류 이득 hFE 최대:: 20

키:: 1 mm

길이:: 3 mm

동작 주파수:: 2300 MHz

유형:: RF 바이폴라 소신호

너비:: 1.4 mm

상표:: NXP반도체

이득 대역폭 곱 fT:: 2300 MHz

최대 DC 수집기 전류:: 10 mA

Pd - 전력 손실:: 30 mW

상품 유형:: RF 양극성 트랜지스터

공장 팩 수량:: 3000

하위 카테고리:: 트랜지스터

부품 번호 별칭:: 933222700215

단위 무게:: 0.000282 oz

Tags: BFT25, BFT2, BFT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BFT25,215 설명

***ark: Bipolar - Rf Transistor, Npn, 5 V, 2.3 Ghz, 30 Mw, 6.5 Ma, 40 Rohs Compliant: Yes

***ical: Trans RF BJT NPN 5V 0.0065A 30mW 3-Pin TO-236AB T/R

***nell: RF TRANSISTOR, NPN, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 5V; Transition Frequency ft: 2.3GHz; Power Dissipation Pd: 30mW; DC Collector Current: 6.5mA; DC Current Gain hFE: 40hFE; RF Transistor

***inecomponents.com: NPN Bipolar Transistor SOT23

***SIT Distribution GmbH: RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN

***ical: SOT23 NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR

***el Electronic: Bipolar Transistors - BJT NPN RF

***SIT Distribution GmbH: Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon

***ure Electronics: SST3904 Series 40 V 0.2 A SMT NPN General Purpose Transistor - SST-3

***ical: Trans GP BJT NPN 40V 0.2A 350mW 3-Pin SOT-23 T/R

***nell: TRANS, NPN, 40V, 0.2A, 150DEG C, 0.35W; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 350mW; DC Collector Current: 200mA; DC Current Gain hFE: 30hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ical: Trans Digital BJT NPN 50V 100mA 350mW 3-Pin SOT-23 T/R

***ure Electronics: DTC114ECA Series 50 V 100 mA Surface Mount NPN Digital Transistor - SST-3

***nell: DIGITAL TRANSISTOR, 50V, 0.1A; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 10kohm; Resistor Ratio, R1 / R2: 1(Ratio); RF Transistor Case: SOT-23; No. of Pins: 3 Pin; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

*** Stop Electro: Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB

*** Source Electronics: TRANS NPN 30V 0.1A SOT-323 / Trans GP BJT NPN 30V 0.1A 200mW 3-Pin UMT T/R

***ure Electronics: BC848BW Series 30 V 100 mA SMT NPN General Purpose Transistor - SC-70

***nell: TRANS, NPN, 30V, 0.1A, 150DEG C, 0.2W; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: -; Power Dissipation Pd: 200mW; DC Collector Current: 100mA; DC Current Gain hFE: 200hFE; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***r Electronics: Small Signal Bipolar Transistor, 0.8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon

***ure Electronics: MMBTA28 Series 80 V CE Breakdown 0.8 A NPN Darlington Transistor - SSOT-3

***nell: TRANSISTOR, NPN, 80V, 0.8A, SUPERSOT-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 125MHz; Power Dissipation Pd: 350mW; DC Collector Current: 800mA; DC Current Gain hFE: 10000hF

***rchild Semiconductor: NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03.

***ark: Transistor; Transistor Type:Darlington; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:80V; Continuous Collector Current, Ic:800mA; Collector Emitter Saturation Voltage, Vce(sat):1.2V; Power Dissipation, Pd:350mW ;RoHS Compliant: Yes

***ure Electronics: BFU530A: 12 V 40 mA 450 mW NPN Wideband Silicon RF Transistor-TO-236AB (SOT23)

***roFlash: RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, L Band, Silicon, NPN, TO-236AB

***ical: Trans RF BJT NPN 16V 0.065A 450mW Automotive 3-Pin TO-236AB T/R

***W: Transistor, 0 to 2 GHz, 10 dBm, 18 dB, 24V, SOT23, Silicon

*** Semiconductors SCT: NPN Wideband Silicon RF Transistor, TO-236AB, RoHS

***nell: RF TRANSISTOR, AEC-Q101, NPN, 12V, SOT23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 12V; Transition Frequency ft: 11GHz; Power Dissipation Pd: 450mW; DC Collector Current: 40mA; DC Current Gain hFE: 60hFE; RF Transistor Case: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

Market price

부분 #	제조	설명	재고	가격
BFT25,215 DISTI # 568-11113-1-ND	NXP Semiconductors	RF TRANS NPN 5V 2.3GHZ TO236AB RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3063In Stock	1000:$0.2325 500:$0.3009 100:$0.3830 10:$0.5130 1:$0.6000
BFT25,215 DISTI # 568-11113-6-ND	NXP Semiconductors	RF TRANS NPN 5V 2.3GHZ TO236AB RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3063In Stock	1000:$0.2325 500:$0.3009 100:$0.3830 10:$0.5130 1:$0.6000
BFT25,215 DISTI # 568-11113-2-ND	NXP Semiconductors	RF TRANS NPN 5V 2.3GHZ TO236AB RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	30000:$0.1766 15000:$0.1793 6000:$0.1926 3000:$0.2058
BFT25,215 DISTI # BFT25,215	Avnet, Inc.	Trans GP BJT NPN 5V 0.0065A 3-Pin TO-236AB T/R - Tape and Reel (Alt: BFT25,215) RoHS: Compliant Min Qty: 6000 Container: Reel	Americas - 0	6000:$0.2119 12000:$0.2039 18000:$0.1959 30000:$0.1889 60000:$0.1849
BFT25,215 DISTI # BFT25,215	Avnet, Inc.	Trans GP BJT NPN 5V 0.0065A 3-Pin TO-236AB T/R (Alt: BFT25,215) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.1649 6000:€0.1639 12000:€0.1629 18000:€0.1629 30000:€0.1619
BFT25,215 DISTI # 70R2574	NXP Semiconductors	Bipolar - RF Transistor, NPN, 5 V, 2.3 GHz, 30 mW, 6.5 mA, 40 RoHS Compliant: Yes	0	1:$0.2930
BFT25,215 DISTI # 96K6964	NXP Semiconductors	Bipolar - RF Transistor, NPN, 5 V, 2.3 GHz, 30 mW, 6.5 mA, 40 RoHS Compliant: Yes	931	1000:$0.2260 500:$0.2480 250:$0.2710 100:$0.2930 50:$0.3550 25:$0.4180 10:$0.4800 1:$0.5800
BFT25215	NXP Semiconductors	RoHS: Not Compliant	2939	1000:$0.1700 500:$0.1800 100:$0.1900 25:$0.2000 1:$0.2100
BFT25,215 DISTI # 771-BFT25215	NXP Semiconductors	RF Bipolar Transistors TAPE7 TNS-RFSS RoHS: Compliant	3109	1:$0.5800 10:$0.4800 100:$0.2930 1000:$0.2260 3000:$0.1930 9000:$0.1800 24000:$0.1700 45000:$0.1660
BFT25.215 DISTI # BFT25.215	NXP Semiconductors	Transistor: NPN,bipolar,RF,5V,6.5mA,30mW,SOT23	3000	3:$0.2108 25:$0.1892 100:$0.1675 500:$0.1504 3000:$0.1402
BFT25.215 DISTI # BFT25.215	NXP Semiconductors	Transistor: NPN,bipolar,RF,5V,6.5mA,30mW,SOT23	3000	3:$0.2102 25:$0.1886 100:$0.1670 500:$0.1500 3000:$0.1397
BFT25,215 DISTI # BFT25-215	NXP Semiconductors	RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT RoHS: Compliant	0	6000:$0.2100
BFT25,215 DISTI # 1081304	NXP Semiconductors	RF TRANSISTOR, NPN, SOT-23 RoHS: Compliant	956	500:£0.1600 250:£0.1680 100:£0.1760 25:£0.1790 5:£0.2230
BFT25,215 DISTI # XSFP00000083054	NXP Semiconductors	Film Capacitor, Polypropylene, 1000V, 5%+Tol,5%-Tol, 0.062uF, Through Hole Mount, 6939 RoHS: Compliant	9000	9000:$0.2855 3000:$0.3140
BFT25,215 DISTI # 1081304RL	NXP Semiconductors	RF TRANSISTOR, NPN, SOT-23 RoHS: Compliant	0	24000:$0.2690 9000:$0.2850 3000:$0.3060 1000:$0.3590 100:$0.4650 10:$0.7600 1:$0.9180
BFT25,215 DISTI # 1081304	NXP Semiconductors	RF TRANSISTOR, NPN, SOT-23 RoHS: Compliant	931	24000:$0.2690 9000:$0.2850 3000:$0.3060 1000:$0.3590 100:$0.4650 10:$0.7600 1:$0.9180

영상	부분 #	설명
	Mfr.#: AD8009JRTZ-REEL7 OMO.#: OMO-AD8009JRTZ-REEL7	High Speed Operational Amplifiers 1GHz 5,500 V/uS Low Distortion
	Mfr.#: AD8011ARZ OMO.#: OMO-AD8011ARZ	Operational Amplifiers - Op Amps 300MHz 1mA Current Feedback
	Mfr.#: BC846BLT1G OMO.#: OMO-BC846BLT1G	Bipolar Transistors - BJT 100mA 80V NPN
	Mfr.#: BC847BLT1G OMO.#: OMO-BC847BLT1G	Bipolar Transistors - BJT 100mA 50V NPN
	Mfr.#: 1N4148WS OMO.#: OMO-1N4148WS	Diodes - General Purpose, Power, Switching Small Signal Diode
	Mfr.#: MMBF4393LT3G OMO.#: OMO-MMBF4393LT3G	JFET SS JFET NCH 30V TR
	Mfr.#: FDV301N OMO.#: OMO-FDV301N	MOSFET N-Ch Digital
	Mfr.#: 2N7002 OMO.#: OMO-2N7002	MOSFET N-CHANNEL 60V 115mA
	Mfr.#: SN74LS138N OMO.#: OMO-SN74LS138N	Encoders, Decoders, Multiplexers & Demultiplexers Line Decoder
	Mfr.#: AD8009JRTZ-REEL7 OMO.#: OMO-AD8009JRTZ-REEL7-ANALOG-DEVICES-INC-ADI	High Speed Operational Amplifiers 1GHz 5,500 V/uS Low Distortion

BFT25,215

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes