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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| FDI038AN06A0 DISTI # 512-FDI038AN06A0 | ON Semiconductor | MOSFET 60V 80a 0.0038 Ohms/VGS=10V RoHS: Compliant | 758 |
|
| FDI038AN06A0_NL | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 17A I(D), 60V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AB RoHS: Not Compliant | 169 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: FDI038AN06A0 OMO.#: OMO-FDI038AN06A0 |
MOSFET 60V 80a 0.0038 Ohms/VGS=10V |
|
Mfr.#: FDI038AN OMO.#: OMO-FDI038AN-1190 |
신규 및 오리지널 |
|
Mfr.#: FDI038AN06A0 |
MOSFET N-CH 60V 80A TO-262AB |
|
|
Mfr.#: FDI038AN06A0_NL OMO.#: OMO-FDI038AN06A0-NL-1190 |
Power Field-Effect Transistor, 17A I(D), 60V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AB |
|
|
Mfr.#: FDI038AN06AD OMO.#: OMO-FDI038AN06AD-1190 |
신규 및 오리지널 |
|
|
Mfr.#: FDI038AN06AO OMO.#: OMO-FDI038AN06AO-1190 |
신규 및 오리지널 |
|
|
Mfr.#: FDI038AN06AO 38N06 OMO.#: OMO-FDI038AN06AO-38N06-1190 |
신규 및 오리지널 |
