ZXMC3A17DN8TA

Mfr. #:: ZXMC3A17DN8TA
제조사:: Diodes Incorporated
설명:: IGBT Transistors MOSFET 30V Enhancement Mode
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: ZXMC3A17DN8TA 데이터 시트
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HTML Datasheet:: ZXMC3A17DN8TA Datasheet ZXMC3A17DN8TA Datasheet (P4-P6)ZXMC3A17DN8TA Datasheet (P7-P9)ZXMC3A17DN8TA Datasheet (P10)
ECAD Model:

제품 속성
속성 값

제조사: 다이오드 주식회사

제품 카테고리: FET - 어레이

시리즈: ZXMC3

포장: Digi-ReelR 대체 패키징

단위 무게: 0.002610 oz

장착 스타일: SMD/SMT

패키지 케이스: 8-SOIC (0.154", 3.90mm Width)

기술: 시

작동 온도: -55°C ~ 150°C (TJ)

장착형: 표면 실장

채널 수: 2 Channel

공급자-장치-패키지: 8-SO

구성: 듀얼 듀얼 드레인

FET형: N 및 P-채널

파워맥스: 1.25W

트랜지스터형: 1 N-Channel 1 P-Channel

드레인-소스 전압 Vdss: 30V

입력-커패시턴스-Ciss-Vds: 600pF @ 25V

FET 기능: 로직 레벨 게이트

Current-Continuous-Drain-Id-25°C: 4.1A, 3.4A

Rds-On-Max-Id-Vgs: 50 mOhm @ 7.8A, 10V

Vgs-th-Max-Id: 1V @ 250μA (Min)

Gate-Charge-Qg-Vgs: 12.2nC @ 10V

Pd 전력 손실: 2.1 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 11.2 ns 8.7 ns

상승 시간: 6.4 ns 2.9 ns

Vgs 게이트 소스 전압: 20 V

Id-연속-드레인-전류: 5.4 A

Vds-드레인-소스-고장-전압: 30 V

Rds-On-Drain-Source-Resistance: 65 mOhms

트랜지스터 극성: N-채널 P-채널

일반 꺼짐 지연 시간: 16 ns 29.2 ns

일반 켜기 지연 시간: 2.9 ns 1.7 ns

채널 모드: 상승

Tags: ZXMC3A17DN8T, ZXMC3A17D, ZXMC3A17, ZXMC3A1, ZXMC3A, ZXMC3, ZXMC, ZXM

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

ZXMC3A17DN8TA 설명

***ure Electronics: Dual N & P Channel 30 V 5.4 A 1.25 W Surface Mount Complementary Mosfet - SOIC-8

***ical: Trans MOSFET N/P-CH 30V 4.1A/3.4A 8-Pin SOIC T/R

***des Inc SCT: COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET, N+P, 30V VDS, 20±V VGS

***(Formerly Allied Electronics): MOSFET; N P channel; Dual; Enhance; 30V; SO8

***i-Key: MOSFET N/P-CHAN DUAL 30V 8SOIC

***S: French Electronic Distributor since 1988

***ment14 APAC: MOSFET, DUAL, NP, 30V, SO-8; Module Configuration:Dual; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4.4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.4A; No. of Transistors:2; Package / Case:SOIC; Pin Configuration:1(S1), 2(G1),3(S2),4(G2),5+6(D2),7+8(D1); Power Dissipation Pd:1.25W; Power Dissipation Pd:2.1W; Pulse Current Idm:20A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V

***(Formerly Allied Electronics): IRF7303PBF Dual N-channel MOSFET Transistor; 4.9 A; 30 V; 8-Pin SOIC

***ure Electronics: Dual N-Channel 30 V 0.08 Ohm 25 nC HEXFET® Power Mosfet - SOIC-8

***ical: Trans MOSFET N-CH Si 30V 4.9A 8-Pin SOIC Tube

***klin Elektronik: INFINEON SMD MOSFET NFET 30V 4,9A 0,05Ω 150°C SO-8 IRF7303TRPBF

***fin: Transistor NPN Mos IRF7303/IRF7303PBF INTERNATIONAL RECTIFIER RoHS V=30 SO8

***roFlash: Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***nell: MOSFET, DUAL, NN, LOGIC, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 4.9A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.05ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Po

***ark: Channel Type:Dual N Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:4.9A; Continuous Drain Current Id P Channel:-; No. of Pins:8Pins; Product Range:- RoHS Compliant: Yes

***(Formerly Allied Electronics): SI4532CDY-T1-GE3 Dual N/P-channel MOSFET Transistor; 4.3 A; 6 A; 30V; 8-Pin SOIC

***et: Trans MOSFET N/P-CH 30V 4.9A/3.4A 8-Pin SOIC N T/R

***roFlash: Small Signal Field-Effect Transistor, 6A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***(Formerly Allied Electronics): IRF7313PBF Dual N-channel MOSFET Transistor; 6.5 A; 30 V; 8-Pin SOIC

***eco: Transistor MOSFET N Channel 30 Volt 6.5 .6 Amp 8 Pin SOIC Tape and Reel

***et: Transistor MOSFET Array Dual N-CH 30V 6.5A 8-Pin SOIC Tube

***ure Electronics: Dual N-Channel 30 V 0.046 Ohm 33 nC HEXFET® Power Mosfet - SOIC-8

***nell: MOSFET, DUAL, NN, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 6.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.029ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Di

***emi: N-Channel PowerTrenchTM MOSFET, Logic Level, 30V, 6.5A 38mΩ

***ure Electronics: N-Channel 30 V 38 mOhm Logic Level PowerTrench Mosfet - SOIC-8

***Yang: Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC T/R - Tape and Reel

***ment14 APAC: MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Source Voltage Vds:30V; On Resistance Rds(on):0.038ohm;

***rchild Semiconductor: This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

***nell: MOSFET, N, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 6.5A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 40A; SMD Marking: FDS6630A; Voltage Vds: 30V; Voltage Vds Typ: 30V; Voltage Vgs Max: 1.7V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 3V; Voltage Vgs th Min: 1V

***(Formerly Allied Electronics): SI4936BDY-T1-E3 Dual N-channel MOSFET Transistor; 5.9 A; 30 V; 8-Pin SOIC

***ure Electronics: Dual N-Channel 30 V 0.035 Ohms Surface Mount Power Mosfet - SOIC-8

*** Source Electronics: Trans MOSFET N-CH 30V 6.9A 8-Pin SOIC N T/R / MOSFET 2N-CH 30V 6.9A 8-SOIC

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:6900mA; On Resistance, Rds(on):0.051ohm; Rds(on) Test Voltage, Vgs:20V ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, DUAL, N, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:6.8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Base Number:4936; Current Id Max:6.9A; N-channel Gate Charge:4.5nC; On State Resistance @ Vgs = 4.5V:51mohm; On State resistance @ Vgs = 10V:35mohm; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V

Market price

부분 #	제조	설명	재고	가격
ZXMC3A17DN8TA DISTI # ZXMC3A17DN8TR-ND	Diodes Incorporated	MOSFET N/P-CH 30V 8SOIC RoHS: Compliant Min Qty: 500 Container: Tape & Reel (TR)	On Order	500:$0.5852
ZXMC3A17DN8TA DISTI # ZXMC3A17DN8CT-ND	Diodes Incorporated	MOSFET N/P-CH 30V 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	100:$0.7772 10:$0.9830 1:$1.1100
ZXMC3A17DN8TA DISTI # ZXMC3A17DN8DKR-ND	Diodes Incorporated	MOSFET N/P-CH 30V 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	100:$0.7772 10:$0.9830 1:$1.1100
ZXMC3A17DN8TA DISTI # ZXMC3A17DN8TA	Diodes Incorporated	Trans MOSFET N/P-CH 30V 5.4A/4.4A 8-Pin SO T/R - Tape and Reel (Alt: ZXMC3A17DN8TA) RoHS: Not Compliant Min Qty: 500 Container: Reel	Americas - 0	500:$0.5219 1000:$0.5199 2000:$0.5189 3000:$0.5179 5000:$0.5169
ZXMC3A17DN8TA DISTI # 62M1299	Diodes Incorporated	Trans MOSFET N/P-CH 30V 5.4A/4.4A 8-Pin SO T/R - Product that comes on tape, but is not reeled (Alt: 62M1299) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$1.0300 10:$0.8900 25:$0.8290 50:$0.7660 100:$0.7040
ZXMC3A17DN8TA DISTI # 70438796	Diodes Incorporated	MOSFET,N P channel,Dual,Enhance,30V,SO8 RoHS: Compliant	0	25:$1.3200 125:$1.1600 250:$1.0400 500:$0.9500
ZXMC3A17DN8TA DISTI # 522-ZXMC3A17DN8TA	Diodes Incorporated	MOSFET 30V Enhancement Mode RoHS: Compliant	0	1:$0.9200 10:$0.7840 100:$0.6030 500:$0.5330
ZXMC3A17DN8TA	Zetex / Diodes Inc		331705
ZXMC3A17DN8TA DISTI # 1471154	Diodes Incorporated	MOSFET, DUAL, NP, 30V, SO-8 RoHS: Compliant	0	5:£0.8790 25:£0.7430 100:£0.6040

영상	부분 #	설명
	Mfr.#: ZXMC3AMCTA OMO.#: OMO-ZXMC3AMCTA	MOSFET 30V COMP ENH MODE 20V VGS 3.7 IDS
	Mfr.#: ZXMC3A17DN8TC OMO.#: OMO-ZXMC3A17DN8TC	MOSFET 30V Enhancement Mode
	Mfr.#: ZXMC3AM832TA OMO.#: OMO-ZXMC3AM832TA	MOSFET Cmp 30V NP Ch UMOS
	Mfr.#: ZXMC3A18DN8TA OMO.#: OMO-ZXMC3A18DN8TA	MOSFET 30V COMPLEMENTARY ENHANCEMENT MODE
	Mfr.#: ZXMC3A17DN8 OMO.#: OMO-ZXMC3A17DN8-1190	MOSFET N and P Channel
	Mfr.#: ZXMC3A18DN8 OMO.#: OMO-ZXMC3A18DN8-1190	신규 및 오리지널
	Mfr.#: ZXMC3A18DN8TC OMO.#: OMO-ZXMC3A18DN8TC-1190	신규 및 오리지널
	Mfr.#: ZXMC3AMCTA OMO.#: OMO-ZXMC3AMCTA-DIODES	Trans MOSFET N/P-CH 30V 3.7A/2.7A Automotive 8-Pin DFN EP T/R
	Mfr.#: ZXMC3A16DN8QTA OMO.#: OMO-ZXMC3A16DN8QTA-1190	DIIZXMC3A16DN8QTA (Alt: ZXMC3A16DN8QTA)
	Mfr.#: ZXMC3A18DN8TA OMO.#: OMO-ZXMC3A18DN8TA-DIODES	MOSFET 30V COMPLEMENTARY ENHANCEMENT MODE

ZXMC3A17DN8TA

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes