SIA415DJ-T1-GE3

Name: Vishay - SIA415DJ-T1-GE3
Brand: Vishay
SKU: OMO-2826373
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SIA415DJ-T1-GE3
제조사:: Vishay
설명:: IGBT Transistors MOSFET 20V 12A 19W 35mohm @ 4.5V
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SIA415DJ-T1-GE3 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

제품 속성
속성 값

제조사: 비쉐이

제품 카테고리: FET - 단일

시리즈: 트렌치FETR

포장: Digi-ReelR 대체 패키징

부분 별칭: SIA415DJ-GE3

장착 스타일: SMD/SMT

패키지 케이스: PowerPAKR SC-70-6

기술: 시

작동 온도: -55°C ~ 150°C (TJ)

장착형: 표면 실장

채널 수: 1 Channel

공급자-장치-패키지: PowerPAKR SC-70-6 Single

구성: 하나의

FET형: MOSFET P-채널, 금속 산화물

파워맥스: 19W

트랜지스터형: 1 P-Channel

드레인-소스 전압 Vdss: 20V

입력-커패시턴스-Ciss-Vds: 1250pF @ 10V

FET 기능: 기준

Current-Continuous-Drain-Id-25°C: 12A (Tc)

Rds-On-Max-Id-Vgs: 35 mOhm @ 5.6A, 4.5V

Vgs-th-Max-Id: 1.5V @ 250μA

Gate-Charge-Qg-Vgs: 47nC @ 10V

Pd 전력 손실: 19 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 20 ns

상승 시간: 50 ns

Vgs 게이트 소스 전압: 12 V

Id-연속-드레인-전류: 12 A

Vds-드레인-소스-고장-전압: - 20 V

Rds-On-Drain-Source-Resistance: 35 mOhms

트랜지스터 극성: P-채널

일반 꺼짐 지연 시간: 45 ns

일반 켜기 지연 시간: 25 ns

순방향 트랜스컨덕턴스-최소: 20 S

채널 모드: 상승

Tags: SIA415, SIA41, SIA4, SIA

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIA415DJ-T1-GE3 설명

***ure Electronics: SiA415DJ Series P-Channel 20 V 0.035 Ohms SMT Power Mosfet - PowerPAK SC-70-6L

***et: Trans MOSFET P-CH 20V 8.4A 6-Pin PowerPAK SC-70 T/R

***ronik: P-CHANNEL-FET12 A 20V PP-SC70-6 RoHSconf

***ment14 APAC: P CHANNEL MOSFET, -20V, 12A, SC-70; Tran; P CHANNEL MOSFET, -20V, 12A, SC-70; Transistor Polarity:P Channel; Continuous Drain Current Id:-12A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):51mohm; Rds(on) Test Voltage Vgs:12V; Threshold Voltage Vgs Typ:-1.5V

Market price

부분 #	제조	설명	재고	가격
SIA415DJ-T1-GE3 DISTI # V72:2272_09216827	Vishay Intertechnologies	Trans MOSFET P-CH 20V 8.4A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	2980	75000:$0.3001 30000:$0.3061 15000:$0.3120 6000:$0.3179 3000:$0.3533 1000:$0.3925 500:$0.4274 250:$0.4869 100:$0.4919 50:$0.5397 25:$0.5603 10:$0.6225 1:$0.7260
SIA415DJ-T1-GE3 DISTI # SIA415DJ-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 20V 12A SC70-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	9000In Stock	3000:$0.4004
SIA415DJ-T1-GE3 DISTI # SIA415DJ-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 20V 12A SC70-6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	731In Stock	500:$0.5597 100:$0.7217 10:$0.9130 1:$1.0300
SIA415DJ-T1-GE3 DISTI # SIA415DJ-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 20V 12A SC70-6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SIA415DJ-T1-GE3 DISTI # 25790298	Vishay Intertechnologies	Trans MOSFET P-CH 20V 8.4A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	2980	1000:$0.3937 500:$0.4274 250:$0.4869 100:$0.4919 50:$0.5429 25:$0.5603 20:$0.6225
SIA415DJ-T1-GE3 DISTI # 16P3613	Vishay Intertechnologies	P CHANNEL MOSFET, -20V, 12A, SC-70,Transistor Polarity:P Channel,Continuous Drain Current Id:-12A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.051ohm,Rds(on) Test Voltage Vgs:12V,Threshold Voltage Vgs:-1.5V RoHS Compliant: Yes	0
SIA415DJ-T1-GE3 DISTI # 781-SIA415DJ-T1-GE3	Vishay Intertechnologies	MOSFET -20V Vds 12V Vgs PowerPAK SC-70-6L RoHS: Compliant	0
SIA415DJ-T1-GE3 DISTI # C1S803601730428	Vishay Intertechnologies	MOSFETs RoHS: Compliant	2980	100:$0.4919 50:$0.5429 25:$0.5603 10:$0.6225

SIA415DJ-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes