STGB30V60DF

STGB30V60DF
Mfr. #:
STGB30V60DF
제조사:
STMicroelectronics
설명:
IGBT Transistors IGBT & Power Bipola
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
STGB30V60DF 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
STGB30V60DF 추가 정보 STGB30V60DF Product Details
제품 속성
속성 값
제조사
제품 카테고리
IGBT - 싱글
시리즈
600-650V IGBTs
포장
Digi-ReelR 대체 패키징
단위 무게
0.079014 oz
장착 스타일
SMD/SMT
패키지 케이스
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
입력 유형
기준
장착형
표면 실장
공급자-장치-패키지
D2PAK
구성
하나의
파워맥스
258W
역복구-시간-trr
53ns
전류 수집기 Ic-Max
60A
Voltage-Collector-Emitter-Breakdown-Max
600V
IGBT형
트렌치 필드 스톱
전류 수집기 펄스 Icm
120A
Vce-on-Max-Vge-Ic
2.3V @ 15V, 30A
스위칭 에너지
383μJ (on), 233μJ (off)
게이트 차지
163nC
Td-on-off-25°C
45ns/189ns
시험조건
400V, 30A, 10 Ohm, 15V
Pd 전력 손실
258 W
최대 작동 온도
+ 175 C
최소 작동 온도
- 55 C
컬렉터-이미터-전압-VCEO-최대
600 V
컬렉터-이미터-포화-전압
1.85 V
연속 수집기 전류 at-25-C
60 A
게이트 이미 터 누설 전류
250 nA
최대 게이트 이미 터 전압
20 V
연속 수집기 전류 Ic-Max
30 A
Tags
STGB30V, STGB30, STGB3, STGB, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N=-CH 600V 60A 3-Pin(2+Tab) D2PAK T/R
***p One Stop Global
Trans IGBT Chip N-CH 600V 60A 3-Pin(2+Tab) D2PAK T/R
***et Europe
Trans IGBT Chip N-CH 600V 60A 3-Pin D2PAK T/R
***i-Key
IGBT 600V 60A 258W D2PAK
***ure Electronics
field-stop, V series 600 V, 30 A very high speed
***ark
Ptd High Voltage
IGBT V Series
STMicroelectronics 600V trench-gate field-stop very high speed IGBT V series feature the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz) and simplified thermal and EMI design.
부분 # 제조 설명 재고 가격
STGB30V60DF
DISTI # 497-15120-1-ND
STMicroelectronicsIGBT 600V 60A 258W D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    STGB30V60DF
    DISTI # 497-15120-6-ND
    STMicroelectronicsIGBT 600V 60A 258W D2PAK
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      STGB30V60DF
      DISTI # 497-15120-2-ND
      STMicroelectronicsIGBT 600V 60A 258W D2PAK
      RoHS: Compliant
      Min Qty: 1000
      Container: Tape & Reel (TR)
      Temporarily Out of Stock
      • 1000:$2.2659
      STGB30V60DF
      DISTI # STGB30V60DF
      STMicroelectronicsTrans IGBT Chip N-CH 600V 60A 3-Pin D2PAK T/R - Tape and Reel (Alt: STGB30V60DF)
      RoHS: Compliant
      Min Qty: 1000
      Container: Reel
      Americas - 0
      • 1000:$1.9900
      • 2000:$1.8900
      • 4000:$1.7900
      • 6000:$1.6900
      • 10000:$1.6900
      STGB30V60DF
      DISTI # STGB30V60DF
      STMicroelectronicsTrans IGBT Chip N-CH 600V 60A 3-Pin D2PAK T/R (Alt: STGB30V60DF)
      RoHS: Compliant
      Min Qty: 1000
      Container: Tape and Reel
      Europe - 0
      • 1000:€1.6900
      • 2000:€1.3900
      • 4000:€1.2900
      • 6000:€1.1900
      • 10000:€1.0900
      STGB30V60DF
      DISTI # 511-STGB30V60DF
      STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
      RoHS: Compliant
      0
      • 1000:$1.9200
      영상 부분 # 설명
      STGB30H65FB

      Mfr.#: STGB30H65FB

      OMO.#: OMO-STGB30H65FB

      IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed in a D2PAK package
      STGB30V60DF

      Mfr.#: STGB30V60DF

      OMO.#: OMO-STGB30V60DF

      IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
      STGB30H60DLLFBAG

      Mfr.#: STGB30H60DLLFBAG

      OMO.#: OMO-STGB30H60DLLFBAG

      IGBT Transistors Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed
      STGB30NC60KT4

      Mfr.#: STGB30NC60KT4

      OMO.#: OMO-STGB30NC60KT4

      IGBT Transistors 31 A-600 V Rugged IGBT
      STGB35N35LZ-1

      Mfr.#: STGB35N35LZ-1

      OMO.#: OMO-STGB35N35LZ-1

      IGBT Transistors 345V INTERNALLY CLAMPED IGBT
      STGB35N35LZ-1

      Mfr.#: STGB35N35LZ-1

      OMO.#: OMO-STGB35N35LZ-1-STMICROELECTRONICS

      IGBT Transistors 345V INTERNALLY CLAMPED IGBT
      STGB35N35LZT4

      Mfr.#: STGB35N35LZT4

      OMO.#: OMO-STGB35N35LZT4-STMICROELECTRONICS

      IGBT Transistors EAS 350 mJ 350 V Int clamped IGBT
      STGB30H60DF

      Mfr.#: STGB30H60DF

      OMO.#: OMO-STGB30H60DF-STMICROELECTRONICS

      IGBT 600V 60A 260W D2PAK
      STGB30V60F

      Mfr.#: STGB30V60F

      OMO.#: OMO-STGB30V60F-STMICROELECTRONICS

      TRENCH GATE FIELD-STOP IGBT, V S
      STGB30H60DLFB

      Mfr.#: STGB30H60DLFB

      OMO.#: OMO-STGB30H60DLFB-STMICROELECTRONICS

      TRENCH GATE FIELD-STOP IGBT, HB
      유효성
      재고:
      Available
      주문 시:
      3000
      수량 입력:
      STGB30V60DF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$2.52
      US$2.52
      10
      US$2.39
      US$23.94
      100
      US$2.27
      US$226.80
      500
      US$2.14
      US$1 071.00
      1000
      US$2.02
      US$2 016.00
      시작
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