A3T18H455W23SR6

Mfr. #:: A3T18H455W23SR6
제조사:: NXP Semiconductors
설명:: RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 87 W Avg., 30 V
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: A3T18H455W23SR6 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: A3T18H455W23SR6 Datasheet A3T18H455W23SR6 Datasheet (P4-P6)A3T18H455W23SR6 Datasheet (P7-P9)A3T18H455W23SR6 Datasheet (P10-P12)A3T18H455W23SR6 Datasheet (P13-P15)A3T18H455W23SR6 Datasheet (P16-P17)
ECAD Model:
추가 정보:: A3T18H455W23SR6 추가 정보 A3T18H455W23SR6 Product Details

제품 속성
속성 값

제조사:: NXP

제품 카테고리:: RF MOSFET 트랜지스터

RoHS:: Y

트랜지스터 극성:: 듀얼 N-채널

기술:: 시

Id - 연속 드레인 전류:: 3.6 A

Vds - 드레인 소스 항복 전압:: - 500 mV, 65 V

얻다:: 16.7 dB

출력 파워:: 87 W

최소 작동 온도:: - 40 C

최대 작동 온도:: + 150 C

장착 스타일:: SMD/SMT

패키지/케이스:: ACP-1230S-4L2S

포장:: 릴

동작 주파수:: 1805 MHz to 1880 MHz

유형:: RF 전력 MOSFET

상표:: NXP반도체

채널 수:: 2 Channel

상품 유형:: RF MOSFET 트랜지스터

공장 팩 수량:: 150

하위 카테고리:: MOSFET

Vgs - 게이트 소스 전압:: - 6 V, 10 V

Vgs th - 게이트 소스 임계 전압:: 1.4 V

부품 번호 별칭:: 935354975128

단위 무게:: 0.212803 oz

Tags: A3T18, A3T1, A3T

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

A3T18H455W23SR6 설명

***ark: Airfast Rf Power Ldmos Transistor, 1805-1880 Mhz, 87 W Avg., 30 V

***et: RF Power Lateral MOSFET N-Channel Enhancement Mode LDMOS Transistor 30 V 590 mA 87 W 4-Pin ACP-1230S T/R

***W: RF Power Transistor, 1.805 to 1.88 GHz, 87 W Avg., Typ Gain in dB is 17.4 @ 1840 MHz, 30 V, SOT1800-4, LDMOS

***i-Key: AIRFAST RF POWER LDMOS TRANSISTO

A3T18H455W23SR6 추가 정보

Airfast® Third-Generation Power Amplifiers: NXP Semiconductors Airfast® Third-Generation Power Amplifiers provide the best in class performance for the critical parameters that include efficiency, gain, RF power, and signal bandwidth. The Airfast third-generation technology reduces the footprint required to deliver specific RF output power. These amplifiers include 28V and 48V LDMOS transistors. The Airfast third-generation amplifiers are designed for the asymmetrical Doherty amplifier architectures. These amplifiers feature high efficiency, reduced solution size, thermal performance, and operate at wideband frequency. The Airfast third-generation amplifiers support all global cellular standards including LTE and NR for 5G. These amplifiers reduce both the size of cellular base stations and the installation costs.

Market price

부분 #	제조	설명	재고	가격
A3T18H455W23SR6 DISTI # A3T18H455W23SR6-ND	NXP Semiconductors	AIRFAST RF POWER LDMOS TRANSISTO RoHS: Compliant Min Qty: 150 Container: Tape & Reel (TR)	Temporarily Out of Stock	150:$122.2403
A3T18H455W23SR6 DISTI # A3T18H455W23SR6	Avnet, Inc.	RF Power Lateral MOSFET N-Channel Enhancement Mode LDMOS Transistor 30 V 590 mA 87 W 4-Pin ACP-1230S T/R - Tape and Reel (Alt: A3T18H455W23SR6) RoHS: Compliant Min Qty: 150 Container: Reel	Americas - 0	1500:$116.8900 900:$119.1900 600:$123.6900 300:$128.6900 150:$133.8900
A3T18H455W23SR6 DISTI # A3T18H455W23SR6	Avnet, Inc.	RF Power Lateral MOSFET N-Channel Enhancement Mode LDMOS Transistor 30 V 590 mA 87 W 4-Pin ACP-1230S T/R (Alt: A3T18H455W23SR6) RoHS: Compliant Min Qty: 150 Container: Tape and Reel	Europe - 0	1500:€110.3900 900:€113.1900 600:€116.9900 300:€120.7900 150:€122.9900
A3T18H455W23SR6 DISTI # 771-A3T18H455W23SR6	NXP Semiconductors	RF MOSFET Transistors A3T18H455W23S/CFM6F///REEL 13 Q2 NDP RoHS: Compliant	0	150:$113.7100
A3T18H455W23SR6 DISTI # A3T18H455W23SR6	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	88	1:$153.6800 10:$142.0500 25:$137.8600

영상	부분 #	설명
	Mfr.#: A3T18H400W23SR6 OMO.#: OMO-A3T18H400W23SR6	RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 71 W Avg., 28 V
	Mfr.#: A3T18H455W23SR6 OMO.#: OMO-A3T18H455W23SR6	RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 87 W Avg., 30 V
	Mfr.#: A3T18H400W23SR6 OMO.#: OMO-A3T18H400W23SR6-NXP-SEMICONDUCTORS	AIRFAST RF POWER LDMOS TRANSISTO
	Mfr.#: A3T18H455W23SR6 OMO.#: OMO-A3T18H455W23SR6-NXP-SEMICONDUCTORS	AIRFAST RF POWER LDMOS TRANSISTO

A3T18H455W23SR6

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes