IRGS10B60KDPBF

Mfr. #:: IRGS10B60KDPBF
제조사:: Infineon Technologies
설명:: IGBT Transistors 600V ULTRAFAST 10-30KHZ COPACK IGBT
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IRGS10B60KDPBF 데이터 시트
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HTML Datasheet:: IRGS10B60KDPBF Datasheet IRGS10B60KDPBF Datasheet (P4-P6)IRGS10B60KDPBF Datasheet (P7-P9)IRGS10B60KDPBF Datasheet (P10-P12)IRGS10B60KDPBF Datasheet (P13-P15)
ECAD Model:

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: IGBT 트랜지스터

RoHS:: Y

기술:: 시

패키지/케이스:: DPAK-3

장착 스타일:: SMD/SMT

구성:: 하나의

컬렉터-이미터 전압 VCEO 최대:: 600 V

수집기-이미터 포화 전압:: 1.8 V

최대 게이트 이미터 전압:: 20 V

25C에서 연속 수집기 전류:: 35 A

Pd - 전력 손실:: 156 W

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

포장:: 튜브

연속 수집가 현재 IC 최대:: 35 A

키:: 4.83 mm

길이:: 10.67 mm

너비:: 9.65 mm

상표:: 인피니언 테크놀로지스

게이트-이미터 누설 전류:: 100 nA

상품 유형:: IGBT 트랜지스터

공장 팩 수량:: 50

하위 카테고리:: IGBT

부품 번호 별칭:: SP001540990

단위 무게:: 0.009185 oz

Tags: IRGS10, IRGS1, IRGS, IRG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRGS10B60KDPBF 설명

***et Europe: Trans IGBT Chip N-CH 600V 22A 3-Pin(2+Tab) D2PAK Pb free

***nell: IGBT, D2-PAK; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:22A; Voltage, Vce Sat Max:2.5V; Power Dissipation:156W; Case Style:D2-PAK; Termination Type:SMD; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:44A; Power, Pd:156W; Time, Rise:29ns

***ment14 APAC: SINGLE IGBT, 600V, 22A; Transistor Type:; SINGLE IGBT, 600V, 22A; Transistor Type:IGBT; DC Collector Current:22A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:156W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C

Market price

부분 #	제조	설명	재고	가격
IRGS10B60KDPBF DISTI # IRGS10B60KDPBF-ND	Infineon Technologies AG	IGBT 600V 22A 156W D2PAK RoHS: Compliant Min Qty: 500 Container: Tube	Limited Supply - Call
IRGS10B60KDPBF-EL DISTI # IRGS10B60KDPBF-EL	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 22A 3-Pin(2+Tab) D2PAK (Alt: IRGS10B60KDPBF-EL) RoHS: Compliant Min Qty: 1	Europe - 0
IRGS10B60KDPBF DISTI # 70018502	Infineon Technologies AG	600V Ultrafast 10-30 kHz COPACK IGBT IN A D2-PAK Package RoHS: Compliant	0	5:$3.9500
IRGS10B60KDPBF	International Rectifier	Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel RoHS: Compliant	500	1000:$1.2500 500:$1.3200 100:$1.3700 25:$1.4300 1:$1.5400
IRGS10B60KDPBF DISTI # 942-IRGS10B60KDPBF	Infineon Technologies AG	IGBT Transistors 600V ULTRAFAST 10-30KHZ COPACK IGBT RoHS: Compliant	88	1:$2.8100 10:$2.3900 100:$1.9100 500:$1.6700 1000:$1.3900 2500:$1.2900 5000:$1.2400
IRGS10B60KDPBF DISTI # 9074870P	Infineon Technologies AG	IGBT N-CHANNEL 600V 22A D2PAK, TU	65	25:£1.7940 125:£1.6900 250:£1.5920 625:£1.4680
IRGS10B60KDPBF DISTI # IRGS10B60KDPBF	Infineon Technologies AG	Transistor: IGBT,600V,22A,104W,DPAK	74	1:$3.1633 3:$2.7882 10:$2.3983 50:$2.2506

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