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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| HGTG10N120BND DISTI # V36:1790_06359369 | ON Semiconductor | NPTPIGBT TO247 35A 1200V | 0 |
|
| HGTG10N120BND DISTI # HGTG10N120BND-ND | ON Semiconductor | IGBT 1200V 35A 298W TO247 Min Qty: 1 Container: Tube | 781In Stock |
|
| HGTG10N120BND DISTI # 32727600 | ON Semiconductor | NPTPIGBT TO247 35A 1200V | 57600 |
|
| HGTG10N120BND DISTI # 32417875 | ON Semiconductor | NPTPIGBT TO247 35A 1200V | 1251 |
|
| HGTG10N120BND DISTI # HGTG10N120BND | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG10N120BND) RoHS: Compliant Min Qty: 450 | Asia - 0 |
|
| HGTG10N120BND DISTI # HGTG10N120BND | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG10N120BND) RoHS: Compliant Min Qty: 450 Container: Tube | Americas - 0 |
|
| HGTG10N120BND DISTI # 98B1928 | ON Semiconductor | SINGLE IGBT, 1.2KV, 35A,DC Collector Current:35A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:298W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes RoHS: Compliant | 0 |
|
| HGTG10N120BND. DISTI # 16AC0004 | Fairchild Semiconductor Corporation | DC Collector Current:35A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:298W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,Product Range:-,MSL:- RoHS Compliant: Yes RoHS: Compliant | 0 |
|
| HGTG10N120BND DISTI # 512-HGTG10N120BND | ON Semiconductor | IGBT Transistors 35A 1200V N-Ch RoHS: Compliant | 546 |
|
| HGTG10N120BND | Harris Semiconductor | 20 | ||
| HGTG10N120BND | Harris Semiconductor | 23 | ||
| HGTG10N120BND DISTI # HGTG10N120BND | ON Semiconductor | Transistor: IGBT,1.2kV,17A,298W,TO247-3 | 133 |
|
| HGTG10N120BND | Fairchild Semiconductor Corporation | RoHS: Compliant | Europe - 1130 |
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: HGTN10N120BND OMO.#: OMO-HGTN10N120BND-1190 |
신규 및 오리지널 |