MSC040SMA120B

MSC040SMA120B
Mfr. #:
MSC040SMA120B
제조사:
Microchip / Microsemi
설명:
MOSFET UNRLS, FG, SIC MOSFET, TO-247
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
MSC040SMA120B 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
MSC040SMA120B 추가 정보
제품 속성
속성 값
제조사:
마이크로칩
제품 카테고리:
MOSFET
RoHS:
Y
기술:
SiC
장착 스타일:
구멍을 통해
패키지/케이스:
TO-247-3
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
1.2 kV
Rds On - 드레인 소스 저항:
50 mOhms
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 175 C
포장:
튜브
상표:
마이크로칩 / 마이크로세미
상품 유형:
MOSFET
공장 팩 수량:
1
하위 카테고리:
MOSFET
Tags
MSC040S, MSC040, MSC04, MSC0, MSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH SiC 1.2KV 64A Tube
***hardson RFPD
SILICON CARBIDE MOSFETS
***i-Key
MOSFET N-CH 1200V TO247
SiC Schottky Barrier Diodes
Microsemi / Microchip SiC Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon power diodes. SiC (Silicon Carbide) Barrier Diodes are comprised of Silicon (Si) and Carbon (C). Compared to Silicon-only devices, SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity. SiC Schottky Diodes feature zero forward and reverse recovery charge, which reduces diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.
Next Generation SiC MOSFETs
Microsemi / Microchip Next Generation Silicon Carbide (SiC) MOSFETs provide good dynamic and thermal performance compared to the Silicon (Si) power MOSFETs. These MOSFETs come with low capacitances, low gate charge, fast switching speed, and good avalanche ruggedness. The SiC MOSFETs are capable of stable operation at 175°C high junction temperature. These MOSFETs provide high-efficiency with low switching losses. The SiC MOSFETs does not require any freewheeling diodes and reduces the system cost. Typical applications include smart grid transmission and distribution, induction heating and welding, and power supply as well as distribution.
부분 # 제조 설명 재고 가격
MSC040SMA120B
DISTI # V36:1790_21374926
Microsemi CorporationSILICON CARBIDE POWER TRANSISTORS/MODULES0
    MSC040SMA120B
    DISTI # MSC040SMA120B-ND
    Microsemi CorporationMOSFET N-CH 1200V TO247
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    On Order
    • 120:$24.5769
    • 30:$26.4437
    • 10:$28.7770
    • 1:$31.1100
    MSC040SMA120B
    DISTI # MSC040SMA120B
    Microchip Technology IncSilicon Carbide Power MOSFET N-Channel 1200V 67A 3-Pin TO-247 - Rail/Tube (Alt: MSC040SMA120B)
    RoHS: Compliant
    Min Qty: 90
    Container: Tube
    Americas - 0
    • 900:$19.2900
    • 450:$19.5900
    • 270:$20.1900
    • 180:$20.8900
    • 90:$21.5900
    MSC040SMA120B
    DISTI # 494-MSC040SMA120B
    Microchip Technology IncMOSFET
    RoHS: Compliant
    0
    • 1:$36.3400
    • 5:$35.3900
    • 10:$33.9800
    • 25:$32.7900
    • 50:$31.1100
    • 100:$29.2000
    • 250:$27.2800
    영상 부분 # 설명
    SCT10N120

    Mfr.#: SCT10N120

    OMO.#: OMO-SCT10N120

    MOSFET Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
    C3M0120100K

    Mfr.#: C3M0120100K

    OMO.#: OMO-C3M0120100K

    MOSFET 1000V 120mOhm G3 SiC MOSFET TO-247-4
    LSIC1MO120E0160

    Mfr.#: LSIC1MO120E0160

    OMO.#: OMO-LSIC1MO120E0160

    MOSFET 1200 V 160 mOhm SiC Mosfet
    LSIC1MO120E0120

    Mfr.#: LSIC1MO120E0120

    OMO.#: OMO-LSIC1MO120E0120

    MOSFET 1200 V 120 mOhm SiC Mosfet
    C2M0080120D

    Mfr.#: C2M0080120D

    OMO.#: OMO-C2M0080120D

    MOSFET ZFET 1X20A IDS 1200V ON 80MOHM SIC MOSFT
    UJ3C120080K3S

    Mfr.#: UJ3C120080K3S

    OMO.#: OMO-UJ3C120080K3S

    MOSFET 1200V/80mOhm SiC CASCODE G3
    LSIC1MO120E0080

    Mfr.#: LSIC1MO120E0080

    OMO.#: OMO-LSIC1MO120E0080

    MOSFET 1200V 80mOhm SiC MOSFET
    LSIC1MO120E0120

    Mfr.#: LSIC1MO120E0120

    OMO.#: OMO-LSIC1MO120E0120-LITTELFUSE

    1200V/120mohm SiC MOSFET TO-247-3L
    LSIC1MO120E0160

    Mfr.#: LSIC1MO120E0160

    OMO.#: OMO-LSIC1MO120E0160-LITTELFUSE

    1200V/160mohm SiC MOSFET TO-247-3L
    C2M0080120D

    Mfr.#: C2M0080120D

    OMO.#: OMO-C2M0080120D-WOLFSPEED

    MOSFET N-CH 1200V 31.6A TO247
    유효성
    재고:
    Available
    주문 시:
    1000
    수량 입력:
    MSC040SMA120B의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$36.34
    US$36.34
    5
    US$35.39
    US$176.95
    10
    US$33.98
    US$339.80
    25
    US$32.79
    US$819.75
    50
    US$31.11
    US$1 555.50
    100
    US$29.20
    US$2 920.00
    250
    US$27.28
    US$6 820.00
    시작
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