IRF2903ZSPBF

Mfr. #:: IRF2903ZSPBF
제조사:: Infineon / IR
설명:: MOSFET 30V 1 N-CH HEXFET 2.4mOhms 160nC
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IRF2903ZSPBF 데이터 시트
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HTML Datasheet:: IRF2903ZSPBF Datasheet IRF2903ZSPBF Datasheet (P4-P6)IRF2903ZSPBF Datasheet (P7-P9)IRF2903ZSPBF Datasheet (P10-P11)
ECAD Model:

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: TO-263-3

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 30 V

Id - 연속 드레인 전류:: 260 A

Rds On - 드레인 소스 저항:: 2.4 mOhms

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 160 nC

Pd - 전력 손실:: 290 W

구성:: 하나의

포장:: 튜브

키:: 4.4 mm

길이:: 10 mm

트랜지스터 유형:: 1 N-Channel

너비:: 9.25 mm

상표:: 인피니언 / IR

상품 유형:: MOSFET

공장 팩 수량:: 1000

하위 카테고리:: MOSFET

부품 번호 별칭:: SP001569980

단위 무게:: 0.139332 oz

Tags: IRF2903ZS, IRF2903, IRF290, IRF29, IRF2, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
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Step2:
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IRF2903ZSPBF 설명

***(Formerly Allied Electronics): IRF2903ZSPBF N-channel MOSFET Transistor, 235 A, 30 V, 3-Pin D2PAK

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 75A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ment14 APAC: MOSFET, N D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:260A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:231W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:231mJ; Current Id Max:75A; Fall Time tf:37ns; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; Package / Case:D2-PAK; Power Dissipation Pd:231W; Power Dissipation Pd:231W; Pulse Current Idm:1020A; Rise Time:100ns; Storage Temperature Max:175°C; Storage Temperature Min:-55°C; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:0.021V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

***ical: Trans MOSFET N-CH 30V 80A Automotive 3-Pin(2+Tab) D2PAK T/R

***emi: N-Channel Logic Level PowerTrench® MOSFET, 30V, 80A, 2.1mΩ

***r Electronics: Power Field-Effect Transistor, 34A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***i-Key: MOSFET N-CH 30V 75A D2PAK

***Yang: TO-263AB,SINGLE,NCH,30V,0.0023 OHM LOGIC LEVEL DENSE TRENCH - Bulk

*** Electronic Components: MOSFET N-Ch LL UltraFET PWM Optimized

***nell: MOSFET, N, SMD, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0019ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipa

***ineon SCT: 30V, N-Ch, 2.4 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS

***ical: Trans MOSFET N-CH 30V 80A Automotive 3-Pin(2+Tab) D2PAK T/R

***ineon: Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 30V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 30V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 30V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.

***i-Key: MOSFET N-CH 30V 75A D2PAK

*** Electronic Components: MOSFET N-Ch UltraFET Logic Level

***et: TO263AB,SINGLE,NCH,30V,0,0032 OHM LOGIC LVL PWM OPT ULTR

*** Electronics: MOSFET N-CH 25V 80A TO-263

***i-Key: N-CHANNEL POWER MOSFET

***hard Electronics: Power Field-Effect Transistor, 80A I(D), 25V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

***el Nordic: Contact for details

***emi: N-Channel PowerTrench® MOSFET, 30V, 93A, 5.7mΩ

***ure Electronics: N-Channel 30 V 5.7 mOhm Surface Mount PowerTrench® Mosfet - TO-263AB

***et Europe: Trans MOSFET N-CH 30V 19A 3-Pin(2+Tab) D2PAK T/R

***r Electronics: Power Field-Effect Transistor, 80A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N CH, 30V, 93A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:93A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0049ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:80W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

Market price

부분 #	제조	설명	재고	가격
IRF2903ZSPBF DISTI # V99:2348_13890430	Infineon Technologies AG	Trans MOSFET N-CH Si 30V 235A 3-Pin(2+Tab) D2PAK Tube RoHS: Compliant	7	100:$2.5810 25:$2.7210 10:$2.9530 1:$3.2800
IRF2903ZSPBF DISTI # IRF2903ZSPBF-ND	Infineon Technologies AG	MOSFET N-CH 30V 75A D2PAK RoHS: Compliant Min Qty: 300 Container: Tube	Limited Supply - Call
IRF2903ZSPBF	International Rectifier	Power Field-Effect Transistor, 75A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	250	1000:$1.9100 500:$2.0100 100:$2.1000 25:$2.1900 1:$2.3500
IRF2903ZSPBF DISTI # 942-IRF2903ZSPBF	Infineon Technologies AG	MOSFET 30V 1 N-CH HEXFET 2.4mOhms 160nC RoHS: Compliant	0
IRF2903ZSPBF DISTI # IRF2903ZSPBF	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,30V,260A,290W,D2PAK	82	1:$2.2800 3:$2.0800 10:$1.7200 100:$1.4300
IRF2903ZSPBF	International Rectifier	RoHS: Compliant	Europe - 550
IRF2903ZSPBF DISTI # 1551909	Infineon Technologies AG	MOSFET, N D2-PAK RoHS: Compliant	0	1:$5.3000 10:$4.9500 100:$4.3600 250:$4.0500 500:$3.8400 1000:$3.6500
IRF2903ZSPBF DISTI # C1S322000520929	Infineon Technologies AG	MOSFETs RoHS: Compliant	7	1:$3.4370

관련 상품

영상	부분 #	설명
	Mfr.#: IRF2907ZSTRLPBF OMO.#: OMO-IRF2907ZSTRLPBF	MOSFET MOSFT 75V 170A 4.5mOhm 180nC
	Mfr.#: IRF2903ZPBF OMO.#: OMO-IRF2903ZPBF	MOSFET MOSFT 30V 260A 2.4mOhm 160nC Qg
	Mfr.#: IRF2907ZLPBF OMO.#: OMO-IRF2907ZLPBF	MOSFET MOSFT 75V 170A 4.5mOhm 180nC
	Mfr.#: IRF2903ZLPBF OMO.#: OMO-IRF2903ZLPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 75A TO-262
	Mfr.#: IRF2903Z OMO.#: OMO-IRF2903Z-1190	신규 및 오리지널
	Mfr.#: IRF2907ZS-7PPBF OMO.#: OMO-IRF2907ZS-7PPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 75V 160A D2PAK7
	Mfr.#: IRF2907ZSPBF,IRF2907ZS OMO.#: OMO-IRF2907ZSPBF-IRF2907ZS-1190	신규 및 오리지널
	Mfr.#: IRF2907ZSTRLPBF,IRF2907Z OMO.#: OMO-IRF2907ZSTRLPBF-IRF2907Z-1190	신규 및 오리지널
	Mfr.#: IRF2903ZPBF OMO.#: OMO-IRF2903ZPBF-INFINEON-TECHNOLOGIES	Darlington Transistors MOSFET MOSFT 30V 260A 2.4mOhm 160nC Qg
	Mfr.#: IRF2903ZSPBF OMO.#: OMO-IRF2903ZSPBF-INFINEON-TECHNOLOGIES	IGBT Transistors MOSFET 30V 1 N-CH HEXFET 2.4mOhms 160nC

유효성

재고:: Available
주문 시:: 3000
수량 입력:

IRF2903ZSPBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

시작

IRF2903ZS 4
IRF2903 7
IRF290 20
IRF29 21
IRF2 233
IRF 8615

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IRF2903ZSPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes