2N5686G

2N5686G
Mfr. #:
2N5686G
제조사:
ON Semiconductor
설명:
Bipolar Transistors - BJT 50A 80V 300W NPN
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
2N5686G 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
2N5686G Datasheet2N5686G Datasheet (P4-P5)
ECAD Model:
제품 속성
속성 값
제조사:
온세미컨덕터
제품 카테고리:
양극성 트랜지스터 - BJT
RoHS:
Y
장착 스타일:
구멍을 통해
패키지/케이스:
TO-204-2
트랜지스터 극성:
NPN
구성:
하나의
컬렉터-이미터 전압 VCEO 최대:
80 V
컬렉터-베이스 전압 VCBO:
80 V
이미터-베이스 전압 VEBO:
5 V
수집기-이미터 포화 전압:
1 V
최대 DC 수집기 전류:
50 A
이득 대역폭 곱 fT:
2 MHz
최소 작동 온도:
- 65 C
최대 작동 온도:
+ 150 C
시리즈:
2N5686
키:
8.51 mm
길이:
38.86 mm
포장:
쟁반
너비:
26.67 mm
상표:
온세미컨덕터
지속적인 수집가 전류:
50 A
DC 수집기/기본 이득 hfe 최소:
15
Pd - 전력 손실:
300 W
상품 유형:
BJT - 양극성 트랜지스터
공장 팩 수량:
100
하위 카테고리:
트랜지스터
단위 무게:
0.488015 oz
Tags
2N568, 2N56, 2N5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***roFlash
Transistor, Bipolar, Si, NPN, High Current, Power, VCEO 80VDC, IC 50A, PD 300mW, hFE 5
***emi
50 A, 80 V NPN Bipolar Power Transistor
***ical
Trans GP BJT NPN 80V 50A 300000mW 3-Pin(2+Tab) TO-204 Tray
***r Electronics
Power Bipolar Transistor, 50A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin
***ure Electronics
2N Series 80 V 50 A High-Current Complementary Silicon Power Transistor - TO-204
***el Electronic
ON SEMICONDUCTOR - 2N5686G - Transistor Bipolar (BJT) Individual, Propósito General, NPN, 80 V, 2 MHz, 300 mW, 50 A, 2 hFE
***nell
TRANS, BIPOL, NPN, 80V, TO-204AA; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 2MHz; Power Dissipation Pd: 300W; DC Collector Current: 50A; DC Current Gain hFE: 15hFE; Transistor
***roFlash
Transistor, Bipolar, Si, NPN, High Current, Power, VCEO 80VDC, IC 60A, PD 300W, hFE 5
***emi
60 A, 80 V NPN Bipolar Power Transistor
***ical
Trans GP BJT NPN 80V 60A 300000mW 3-Pin(2+Tab) TO-204 Tray
***S.I.T. Europe - USA - Asia
Power Bipolar Transistor, 60A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
***enic
80V 300W 60A NPN TO-3 Bipolar Transistors - BJT ROHS
***ark
BIPOLAR TRANSISTOR, NPN, 80V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:60A; Power Dissipation:300W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Transition Frequency:- RoHS Compliant: Yes
***nell
TRANSISTOR; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: -; Power Dissipation Pd: 300W; DC Collector Current: 1mA; DC Current Gain hFE: 100hFE; Transistor Case Style: TO-204AA; No. of Pins: 2Pins; Operating Temperature Max: 200°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 2.5V; Current Gain Hfe Max: 100; Current Ib: 1A; Current Ic Continuous a Max: 60A; Current Ic NPN Device: 1A; DC Current Gain Hfe Min: 15; DC Current Gain Max (hfe): 100; Junction Temperature Tj Max: +200°C; Junction Temperature Tj Min: -65°C; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +200°C; Termination Type: Through Hole; Voltage Vcbo: 80V
***ical
Trans GP BJT NPN 60V 30A 200000mW 3-Pin(2+Tab) TO-3 Tray
***r Electronics
Power Bipolar Transistor, 30A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
***ure Electronics
2N Series 60 V 30 A Screw Mount High-Power NPN Silicon Transistor - TO-204AA
***emi
High Power NPN Bipolar Power Transistor
***ark
Bipolar Transistor, Npn, 60V To-204; Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:60V; Dc Collector Current:30A; Power Dissipation Pd:200W; Transistor Mounting:through Hole; No. Of Pins:2Pins; Dc Current Gain Hfe:5Hfe Rohs Compliant: Yes
***(Formerly Allied Electronics)
Transistor, Bipolar,Si,NPN,High Power,VCEO 80VDC,IC 25A,PD 200W,TO-204AA (TO-3)
***emi
25 A, 80 V NPN Bipolar Power Transistor
***ical
Trans GP BJT NPN 80V 25A 200000mW 3-Pin(2+Tab) TO-3 Tray
***r Electronics
Power Bipolar Transistor, 25A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
***ure Electronics
2N Series 80 V 25 A NPN Complementary Silicon High-Power Transistor - TO-204AA
***ment14 APAC
Transistor, NPN, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:4MHz; Power Dissipation Pd:200W; DC
***nell
TRANSISTOR, NPN, TO-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 4MHz; Power Dissipation Pd: 200W; DC Collector Current: 25A; DC Current Gain hFE: 4hFE; Transistor Case Style: TO-204AA; No. of Pins: 2Pins; Operating Temperature Max: 200°C; Product Range: 2NXXXX Series; Automotive Qualification Standard: -; MSL: -; SVHC: Lead (27-Jun-2018); Av Current Ic: 25A; Collector Emitter Saturation Voltage Vce(on): 1V; Continuous Collector Current Ic Max: 25A; Current Ic Continuous a Max: 25A; Current Ic hFE: 10A; Device Marking: 2N5886G; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 4MHz; Gain Bandwidth ft Typ: 4MHz; Hfe Min: 20; No. of Transistors: 1; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +200°C; Power Dissipation Ptot Max: 200W; Voltage Vcbo: 80V
부분 # 제조 설명 재고 가격
2N5686G
DISTI # V99:2348_07290247
ON SemiconductorTrans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-204 Tray
RoHS: Compliant
100
  • 1000:$7.2220
  • 500:$8.0230
  • 200:$9.1660
  • 100:$9.5820
2N5686G
DISTI # V36:1790_07290247
ON SemiconductorTrans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-204 Tray
RoHS: Compliant
85
  • 1000:$7.2220
  • 500:$8.0230
  • 200:$9.1660
  • 100:$9.5820
2N5686G
DISTI # 2N5686GOS-ND
ON SemiconductorTRANS NPN 80V 50A TO3
RoHS: Compliant
Min Qty: 1
Container: Tray
304In Stock
  • 500:$9.5369
  • 100:$10.7208
  • 10:$12.6940
  • 1:$13.8100
2N5686G
DISTI # 31062962
ON SemiconductorTrans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-204 Tray
RoHS: Compliant
100
  • 1:$9.5820
2N5686G
DISTI # 30223364
ON SemiconductorTrans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-204 Tray
RoHS: Compliant
85
  • 85:$9.5820
2N5686G
DISTI # 2N5686G
ON SemiconductorTrans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-204 Tray - Trays (Alt: 2N5686G)
RoHS: Compliant
Min Qty: 100
Container: Tray
Americas - 85
  • 100:$8.0900
  • 200:$8.0900
  • 400:$7.9900
  • 600:$7.8900
  • 1000:$7.6900
2N5686G
DISTI # 2N5686G
ON SemiconductorTrans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-204 Tray (Alt: 2N5686G)
RoHS: Compliant
Min Qty: 1
Container: Tray
Europe - 0
  • 1:€10.7755
  • 10:€9.9130
  • 100:€8.3720
2N5686G
DISTI # 26K5299
ON SemiconductorTrans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-204 Tray - Bulk (Alt: 26K5299)
RoHS: Compliant
Min Qty: 1
Container: Bulk
Americas - 0
  • 1:$13.1500
  • 10:$12.1000
  • 25:$11.5900
  • 50:$10.9100
  • 100:$10.2200
  • 250:$9.7100
  • 500:$9.0900
2N5686G
DISTI # 26K5299
ON SemiconductorBIPOLAR TRANSISTOR, NPN, 80V,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:80V,Transition Frequency ft:2MHz,Power Dissipation Pd:300mW,DC Collector Current:50A,DC Current Gain hFE:2hFE,No. of Pins:2Pins,MSL:- , RoHS Compliant: Yes172
  • 1:$11.1800
  • 10:$10.2900
  • 25:$9.8600
  • 50:$9.2800
  • 100:$8.6900
  • 250:$8.2600
  • 500:$7.7300
2N5686G.
DISTI # 30AC3786
ON SemiconductorBIP T03 NPN 50A 80V , ROHS COMPLIANT: YES85
  • 1:$13.4100
  • 10:$12.3400
  • 25:$11.8200
  • 50:$10.9100
  • 100:$10.2200
  • 250:$9.7100
  • 500:$9.0900
2N5686G
DISTI # 70099763
ON SemiconductorTransistor,Bipolar,Si,NPN,High Current,Power,VCEO 80VDC,IC 50A,PD 300mW,hFE 5
RoHS: Compliant
0
  • 1:$13.0900
  • 100:$12.4400
  • 250:$11.8100
2N5686GON Semiconductor 
RoHS: Not Compliant
3067
  • 1000:$10.2400
  • 500:$10.7700
  • 100:$11.2200
  • 25:$11.7000
  • 1:$12.6000
2N5686G
DISTI # 863-2N5686G
ON SemiconductorBipolar Transistors - BJT 50A 80V 300W NPN
RoHS: Compliant
187
  • 1:$13.1500
  • 10:$12.1000
  • 20:$11.5900
  • 100:$10.2200
  • 200:$9.7100
  • 500:$9.0900
2N5686
DISTI # 863-2N5686
ON SemiconductorBipolar Transistors - BJT 50A 80V 300W NPN
RoHS: Not compliant
0
    2N5686G
    DISTI # 8624893
    ON SemiconductorBJT NPN 50A 80V TO-204-2, EA228
    • 1:£9.7000
    2N5686G
    DISTI # 2630288
    ON SemiconductorTRANS, BIPOL, NPN, 80V, TO-204AA
    RoHS: Compliant
    253
    • 1:$20.8200
    • 10:$19.1500
    • 20:$18.3500
    • 100:$16.1700
    • 200:$15.3700
    • 500:$14.3900
    • 1000:$13.2000
    2N5686G
    DISTI # 2630288
    ON SemiconductorTRANS, BIPOL, NPN, 80V, TO-204AA
    RoHS: Compliant
    262
    • 1:£10.5600
    • 5:£10.0500
    • 10:£8.8600
    • 50:£8.1400
    • 100:£7.4100
    영상 부분 # 설명
    2N5684G

    Mfr.#: 2N5684G

    OMO.#: OMO-2N5684G

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    Mfr.#: 1N4750A

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    Zener Diodes 27V 1W ZENER 5%
    CD74HC74E

    Mfr.#: CD74HC74E

    OMO.#: OMO-CD74HC74E

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    CD74HC27E

    Mfr.#: CD74HC27E

    OMO.#: OMO-CD74HC27E

    Logic Gates HS Triple 3-Input
    D53018

    Mfr.#: D53018

    OMO.#: OMO-D53018

    D-Sub Tools & Hardware Lock Post
    LF347N

    Mfr.#: LF347N

    OMO.#: OMO-LF347N

    Operational Amplifiers - Op Amps Quad Wideband JFET
    2TL1-3D

    Mfr.#: 2TL1-3D

    OMO.#: OMO-2TL1-3D

    Toggle Switches DPDT ON-ON Screw Term
    W31-X2M1G-10

    Mfr.#: W31-X2M1G-10

    OMO.#: OMO-W31-X2M1G-10

    Circuit Breakers 10A TOGGLE ACTUATOR
    1N4750A

    Mfr.#: 1N4750A

    OMO.#: OMO-1N4750A-ON-SEMICONDUCTOR

    DIODE ZENER 27V 1W DO41
    LF347N

    Mfr.#: LF347N

    OMO.#: OMO-LF347N-TEXAS-INSTRUMENTS

    Operational Amplifiers - Op Amps Op Amp
    유효성
    재고:
    218
    주문 시:
    2201
    수량 입력:
    2N5686G의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$14.99
    US$14.99
    10
    US$13.79
    US$137.90
    20
    US$13.21
    US$264.20
    100
    US$11.64
    US$1 164.00
    200
    US$11.07
    US$2 214.00
    500
    US$10.36
    US$5 180.00
    1000
    US$9.50
    US$9 500.00
    2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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