SSM3K357R,LF

Mfr. #:: SSM3K357R,LF
제조사:: Toshiba
설명:: MOSFET LowON Res MOSFET ID=.65A VDSS=60V
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SSM3K357R,LF 데이터 시트
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HTML Datasheet:: SSM3K357R,LF Datasheet SSM3K357R,LF Datasheet (P4-P6)SSM3K357R,LF Datasheet (P7-P9)
ECAD Model:
추가 정보:: SSM3K357R,LF 추가 정보

제품 속성
속성 값

제조사:: 도시바

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: SOT-23F-3

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 60 V

Id - 연속 드레인 전류:: 650 mA

Rds On - 드레인 소스 저항:: 1.8 Ohms

Vgs th - 게이트 소스 임계 전압:: 1.3 V

Vgs - 게이트 소스 전압:: 12 V

Qg - 게이트 차지:: 1.5 nC

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 1.5 W

구성:: 하나의

채널 모드:: 상승

포장:: 릴

시리즈:: SSM3K357R

상표:: 도시바

순방향 트랜스컨덕턴스 - 최소:: 500 mS

상품 유형:: MOSFET

공장 팩 수량:: 3000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 3000 ns

일반적인 켜기 지연 시간:: 990 ns

Tags: SSM3K35, SSM3K3, SSM3K, SSM3, SSM

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SSM3K357R,LF 추가 정보

SSM6N357R & SSM3K357R Low ON-Resistance MOSFETs: SSM6N357R & SSM3K357R Low ON-Resistance MOSFETs are silicon N-channel MOSFETs designed for relay driver applications. The SSM6N357R,LF comes with 2 channels whereas the SSM3K357R,LF comes with a single channel. These MOSFETs feature 3V gate drive voltage, built-in internal zener diodes, resistors, and 2kV class Human Body Model (HBM). The low ON-resistance MOSFETs offer 60V drain-source voltage, ±12V gate-source voltage, 150°C channel temperature, and 12.6mJ single-pulse avalanche energy.

SSM3 High Current MOSFETs: Toshiba SSM3 High Current MOSFETs provide a high drain current rating, low capacitance, low on-resistance, and fast switching. Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) are semiconductor devices used for switching and amplifying electronic signals in electronic devices. Applications include mobile devices (wearable device, smart phone, tablet PC, etc.), load switches, DC-DC converters, and general purpose switches.

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