IHW30N120R2

IHW30N120R2
Mfr. #:
IHW30N120R2
제조사:
Infineon Technologies
설명:
IGBT Transistors REVERSE CONDUCT IGBT 1200V 30A
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IHW30N120R2 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사
인피니언 테크놀로지스
제품 카테고리
IGBT - 싱글
시리즈
TrenchStopR
포장
튜브
부분 별칭
IHW30N120R2FKSA1 SP000212017
단위 무게
1.340411 oz
장착 스타일
구멍을 통해
패키지 케이스
TO-247-3
입력 유형
기준
장착형
구멍을 통해
공급자-장치-패키지
PG-TO247-3
구성
하나의
파워맥스
390W
역복구-시간-trr
-
전류 수집기 Ic-Max
60A
Voltage-Collector-Emitter-Breakdown-Max
1200V
IGBT형
NPT, 트렌치 필드 스톱
전류 수집기 펄스 Icm
90A
Vce-on-Max-Vge-Ic
1.8V @ 15V, 30A
스위칭 에너지
3.1mJ
게이트 차지
198nC
Td-on-off-25°C
-/792ns
시험조건
600V, 30A, 28 Ohm, 15V
Pd 전력 손실
390 W
최대 작동 온도
+ 150 C
최소 작동 온도
- 40 C
컬렉터-이미터-전압-VCEO-최대
1.2 kV
컬렉터-이미터-포화-전압
2 V
연속 수집기 전류 at-25-C
30 A
최대 게이트 이미 터 전압
+/- 20 V
연속 수집기 전류 Ic-Max
30 A
Tags
IHW30N120R2, IHW30N120R, IHW30N12, IHW30N1, IHW30N, IHW3, IHW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans IGBT Chip N-CH 1.2KV 30A 3-Pin TO-247 Tube
*** Electronic Components
IGBT Transistors REVERSE CONDUCT IGBT 1200V 30A
***nell
IGBT+ DIODE,1200V,30A,TO247; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 1.8V; Power Dissipation Pd: 390W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; MSL: -; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -40°C; Operating Temperature Range: -40°C to +175°C; Power Dissipation Max: 390W; Transistor Type: IGBT
부분 # 제조 설명 재고 가격
IHW30N120R2
DISTI # IHW30N120R2-ND
Infineon Technologies AGIGBT 1200V 60A 390W TO247-3
RoHS: Compliant
Min Qty: 240
Container: Tube
Limited Supply - Call
    IHW30N120R2
    DISTI # 726-IHW30N120R2
    Infineon Technologies AGIGBT Transistors REVERSE CONDUCT IGBT 1200V 30A
    RoHS: Compliant
    0
      IHW30N120R2Infineon Technologies AGInsulated Gate Bipolar Transistor, 60A I(C), 1200V V(BR)CES, N-Channel, TO-247AD
      RoHS: Compliant
      10
      • 1000:$2.5400
      • 500:$2.6800
      • 100:$2.7900
      • 25:$2.9100
      • 1:$3.1300
      영상 부분 # 설명
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      신규 및 오리지널
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      Mfr.#: IHW30N160R2FKSA1

      OMO.#: OMO-IHW30N160R2FKSA1-INFINEON-TECHNOLOGIES

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      Mfr.#: IHW30N90

      OMO.#: OMO-IHW30N90-1190

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      Mfr.#: IHW30R1202

      OMO.#: OMO-IHW30R1202-1190

      신규 및 오리지널
      IHW30T60

      Mfr.#: IHW30T60

      OMO.#: OMO-IHW30T60-1190

      신규 및 오리지널
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      Mfr.#: IHW30N160R5XKSA1

      OMO.#: OMO-IHW30N160R5XKSA1-INFINEON-TECHNOLOGIES

      HOME APPLIANCES 14
      IHW30N110R3XK

      Mfr.#: IHW30N110R3XK

      OMO.#: OMO-IHW30N110R3XK-1190

      Trans IGBT Chip N-CH 1.1KV 60A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IHW30N110R3FKSA1)
      유효성
      재고:
      Available
      주문 시:
      2500
      수량 입력:
      IHW30N120R2의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$3.14
      US$3.14
      10
      US$2.98
      US$29.78
      100
      US$2.82
      US$282.15
      500
      US$2.66
      US$1 332.40
      1000
      US$2.51
      US$2 508.00
      시작
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