SI4386DY-T1-E3

Mfr. #:: SI4386DY-T1-E3
제조사:: Vishay
설명:: Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SI4386DY-T1-E3 데이터 시트
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ECAD Model:
추가 정보:: SI4386DY-T1-E3 추가 정보

제품 속성
속성 값

제조사: 비쉐이 실리콘

제품 카테고리: FET - 단일

시리즈: 트렌치FETR

포장: Digi-ReelR 대체 패키징

부분 별칭: SI4386DY-E3

단위 무게: 0.006596 oz

장착 스타일: SMD/SMT

패키지 케이스: 8-SOIC (0.154", 3.90mm Width)

기술: 시

작동 온도: -55°C ~ 150°C (TJ)

장착형: 표면 실장

채널 수: 1 Channel

공급자-장치-패키지: 8-SO

구성: 하나의

FET형: MOSFET N-채널, 금속 산화물

파워맥스: 1.47W

트랜지스터형: 1 N-Channel

드레인-소스 전압 Vdss: 30V

입력-커패시턴스-Ciss-Vds: -

FET 기능: 기준

Current-Continuous-Drain-Id-25°C: 11A (Ta)

Rds-On-Max-Id-Vgs: 7 mOhm @ 16A, 10V

Vgs-th-Max-Id: 2.5V @ 250μA

Gate-Charge-Qg-Vgs: 18nC @ 4.5V

Pd 전력 손실: 1.47 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 9 ns

상승 시간: 9 ns

Vgs 게이트 소스 전압: 20 V

Id-연속-드레인-전류: 11 A

Vds-드레인-소스-고장-전압: 30 V

Rds-On-Drain-Source-Resistance: 7 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 35 ns

일반 켜기 지연 시간: 12 ns

채널 모드: 상승

Tags: SI4386DY-T, SI4386D, SI4386, SI438, SI43, SI4

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4386DY-T1-E3 설명

***ure Electronics: Single N-Channel 30 V 7 mOhms Surface Mount Power Mosfet - SOIC-8

***ical: Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R

***S.I.T. Europe - USA - Asia: Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ser: N-Channel MOSFETs N-CH REDUCED QG FAST SWITCHING

SI4386DY-T1-E3 추가 정보

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

부분 #	제조	설명	재고	가격
SI4386DY-T1-E3 DISTI # V72:2272_09215556	Vishay Intertechnologies	Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R RoHS: Compliant	1865	1000:$0.6183 500:$0.6828 250:$0.8676 100:$0.8807 25:$1.0632 10:$1.0670 1:$1.1776
SI4386DY-T1-E3 DISTI # SI4386DY-T1-E3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 11A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	6768In Stock	1000:$0.5646 500:$0.7151 100:$0.9221 10:$1.1670 1:$1.3200
SI4386DY-T1-E3 DISTI # SI4386DY-T1-E3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 11A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	6768In Stock	1000:$0.5646 500:$0.7151 100:$0.9221 10:$1.1670 1:$1.3200
SI4386DY-T1-E3 DISTI # SI4386DY-T1-E3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 11A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	5000In Stock	2500:$0.5116
SI4386DY-T1-E3 DISTI # 25789845	Vishay Intertechnologies	Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R RoHS: Compliant	1865	1000:$0.6183 500:$0.6828 250:$0.8676 100:$0.8807 25:$1.0632 10:$1.0670
SI4386DY-T1-E3 DISTI # SI4386DY-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4386DY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.5009 5000:$0.4989 10000:$0.4979 15000:$0.4969 25000:$0.4959
SI4386DY-T1-E3 DISTI # SI4386DY-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R (Alt: SI4386DY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
SI4386DY-T1-E3 DISTI # 75M5463	Vishay Intertechnologies	N CHANNEL MOSFET, 30V, 16A, SOIC, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:30V,On Resistance Rds(on):7mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V , RoHS Compliant: Yes	0	1:$0.8650 2500:$0.8650
SI4386DY-T1-E3 DISTI # 85W2146	Vishay Intertechnologies	Transistor Polarity:N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0058ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:3.1W,No. of Pins:8Pins , RoHS Compliant: Yes	0	1:$1.6200 10:$1.3400 25:$1.2400 50:$1.1400 100:$1.0400 500:$0.9090 1000:$0.8660
SI4386DY-T1-E3. DISTI # 30AC0155	Vishay Intertechnologies	N-CH REDUCED QG, FAST SWITCHING MOSFET , ROHS COMPLIANT: YES	0	1:$0.8650 2500:$0.8650
SI4386DY-T1-E3 DISTI # 781-SI4386DY-T1-E3	Vishay Intertechnologies	MOSFET 30V 16A 3.1W 7.0mohm @ 10V RoHS: Compliant	2817	1:$1.6200 10:$1.3400 100:$1.0400 500:$0.9090 1000:$0.8660 2500:$0.8650
SI4386DYT1E3	Vishay Intertechnologies	RoHS: Compliant	Europe - 2500
SI4386DY-T1-E3	Vishay Intertechnologies	MOSFET 30V 16A 3.1W 7.0mohm @ 10V	Americas -
SI4386DY-T1-E3 DISTI # C1S803601003607	Vishay Intertechnologies	MOSFETs RoHS: Compliant	1865	250:$0.8689 100:$0.8807 25:$1.0632 10:$1.0670

영상	부분 #	설명
	Mfr.#: SI4386DY-T1-E3 OMO.#: OMO-SI4386DY-T1-E3	MOSFET 30V 16A 3.1W 7.0mohm @ 10V
	Mfr.#: SI4386DY-T1-GE3 OMO.#: OMO-SI4386DY-T1-GE3	MOSFET 30V 16A 3.1W 7.0mohm @ 10V
	Mfr.#: SI4386DY-T1-GE3 OMO.#: OMO-SI4386DY-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 30V 16A 3.1W 7.0mohm @ 10V
	Mfr.#: SI4386DY OMO.#: OMO-SI4386DY-1190	신규 및 오리지널
	Mfr.#: SI4386DY-T1 OMO.#: OMO-SI4386DY-T1-1190	신규 및 오리지널
	Mfr.#: SI4386DYT1E3 OMO.#: OMO-SI4386DYT1E3-1190	Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
	Mfr.#: SI4386DY-T1-E3 OMO.#: OMO-SI4386DY-T1-E3-VISHAY	Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R

SI4386DY-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes