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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| SKIM601TMLI12E4B DISTI # 23X8916 | SEMIKRON | IGBT MODULE, QUAD, 1.2KV, 529A,Transistor Polarity:Quad NPN,DC Collector Current:529A,Collector Emitter Saturation Voltage Vce(on):1.8V,Power Dissipation Pd:-,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:- RoHS Compliant: Yes | 0 |
|
| SKIM601TMLI12E4B DISTI # 71043042 | SEMIKRON | SKIM,Trench Gate 4 IGBT Module,1200V,800A RoHS: Not Compliant | 0 |
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| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: SKIM601GD126DLM OMO.#: OMO-SKIM601GD126DLM-1190 |
신규 및 오리지널 |
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|
Mfr.#: SKIM601GD126DM OMO.#: OMO-SKIM601GD126DM-1190 |
IGBT MODULE, SIX, 1.2KV, 480A, Transistor Polarity:Six NPN, DC Collector Current:480A, Collector Emitter Saturation Voltage Vce(on):1.7V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ce |
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Mfr.#: SKIM601TML12E4B OMO.#: OMO-SKIM601TML12E4B-1190 |
신규 및 오리지널 |
|
|
Mfr.#: SKIM601TMLI12E4B OMO.#: OMO-SKIM601TMLI12E4B-1190 |
IGBT MODULE, QUAD, 1.2KV, 529A, Transistor Polarity:Quad NPN, DC Collector Current:529A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:-, Collector Emitter Voltage V(br) |