QPD1025

Mfr. #:: QPD1025
제조사:: Qorvo
설명:: RF MOSFET Transistors 1-1.1GHz 1800 Watt Gain 22.5dB 65V GaN
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: QPD1025 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: QPD1025 추가 정보

제품 속성
속성 값

제조사:: 코르보

제품 카테고리:: RF MOSFET 트랜지스터

RoHS:: Y

트랜지스터 극성:: 듀얼 N-채널

기술:: GaN SiC

Id - 연속 드레인 전류:: 28 A

Vds - 드레인 소스 항복 전압:: 65 V

얻다:: 22.5 dB

출력 파워:: 1.862 kW

최소 작동 온도:: - 40 C

최대 작동 온도:: + 85 C

패키지/케이스:: NI-1230-4

포장:: 쟁반

동작 주파수:: 1 GHz to 1.1 GHz

시리즈:: QPD

유형:: RF 전력 MOSFET

상표:: 코르보

채널 수:: 2 Channel

습기에 민감한:: 네

Pd - 전력 손실:: 685 W

상품 유형:: RF MOSFET 트랜지스터

공장 팩 수량:: 18

하위 카테고리:: MOSFET

Vgs - 게이트 소스 전압:: - 2.8 V

Tags: QPD102, QPD10, QPD1, QPD

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

QPD1025 추가 정보

QPD1025 & QPD1025L RF Input-Matched Transistors: Qorvo QPD1025 and QPD1025L RF Input-Matched Transistors are discrete GaN on SiC High Electron Mobility Transistors (HEMT) that have an operating frequency range of 1.0GHz to 1.1GHz. These transistors feature 22.5dB linear gain, 1800W output power, 65V operating voltage, and support both pulse and CW operations. The QPD1025 and QPD1025L transistors are available in industry standard air cavity packages and are ideal for IFF transponders, avionics, and test instrumentation.

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