FDMC7570S

FDMC7570S
Mfr. #:
FDMC7570S
제조사:
ON Semiconductor / Fairchild
설명:
MOSFET 25V 40A 2mOhm N-CH PowerTrench SyncFET
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
FDMC7570S 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
FDMC7570S 추가 정보
제품 속성
속성 값
제조사:
온세미컨덕터
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
Power-33-8
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
25 V
Id - 연속 드레인 전류:
40 A
Rds On - 드레인 소스 저항:
2 mOhms
Vgs th - 게이트 소스 임계 전압:
1.7 V
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
59 W
구성:
하나의
상표명:
싱크펫
포장:
키:
0.8 mm
길이:
3.3 mm
시리즈:
FDMC7570S
트랜지스터 유형:
1 N-Channel
너비:
3.3 mm
상표:
온세미컨덕터 / 페어차일드
순방향 트랜스컨덕턴스 - 최소:
154 S
가을 시간:
4.5 ns
상품 유형:
MOSFET
상승 시간:
6.8 ns
공장 팩 수량:
3000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
34 ns
일반적인 켜기 지연 시간:
14 ns
단위 무게:
0.001133 oz
Tags
FDMC75, FDMC7, FDMC, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ponent Sense
MOSFET 25V 40A 2mOhm N-CH PowerTrench SyncFET
***r Electronics
Power Field-Effect Transistor, 27A I(D), 25V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
***nell
MOSFET, N CH, 25V, 40A, POWER33; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:59W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 33; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMC7570S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***ical
Trans MOSFET N-CH 25V 34A 8-Pin PQFN T/R
***ment14 APAC
N CH MOSFET, 25V, 34A, 8-PWR56; Transist; N CH MOSFET, 25V, 34A, 8-PWR56; Transistor Polarity:N Channel; Continuous Drain Current Id:34A; Drain Source Voltage Vds:25V; On Resistance Rds(on):1.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; No. of Pins:8
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.
***Yang
Trans MOSFET N-CH 30V 26A 8-Pin Power 56 T/R - Tape and Reel
*** Stop Electro
Power Field-Effect Transistor, 26A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 30V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:59W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMS8023S has been designed to minimize losses in power conversion application. Advancements in both Silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
***ure Electronics
N-Channel 25 V 30 A 0.00145 ohm SMT PowerTrench SyncFET Mosfet Power 56
***r Electronics
Power Field-Effect Transistor, 30A I(D), 25V, 0.00145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 25V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:89W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMS7560S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***ineon SCT
25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
*** Source Electronics
Trans MOSFET N-CH 25V 44A 8-Pin PQFN EP T/R / MOSFET N-CH 25V 44A 8PQFN
***ineon
Benefits: Low RDS(ON) (less than 1.10 mOhms); Schottky Intrinsic Diode with Low Forward Voltage; Low Thermal Resistance to PCB (less than 1.0C/W); Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; RoHS Compliant, Halogen-Free; MSL1, Industrial Qualification; FastIRFET | Target Applications: MultiPhase SyncFET; Point of Load SyncFET
***ure Electronics
Single N-Channel 30 V 50 A 69 W 1.8 mOhm Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 30V 50A 8-Pin PowerPAK SO EP T/R
***ponent Sense
MOSFET 30V 50A 69W 2.5mohm @ 10V
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 33.3A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ment14 APAC
MOSFET, N CH, 30V, 50A, PPAK SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.05mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:69W; Voltage Vgs Max:20V
***ure Electronics
Single N-Channel 30 V 1.5 mOhm 51 nC HEXFET® Power Mosfet - DirectFET®
***ineon SCT
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MT package rated at 34 amperes optimized with low on resistance., DIRECTFET, RoHS
***nell
MOSFET, N-CH, 30V, 192A, DIRECTFET MT-7; Transistor Polarity: N Channel; Continuous Drain Current Id: 192A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.; Available until stocks are exhausted Alternative available
***ineon
Benefits: Ultra-low RDS(on); Low Profile (less than 0.7 mm); Dual Sided Cooling Compatible; Ultra-low Package Inductance; Optimized for high speed switching or high current switch (Power Tool); Low Conduction and Switching Losses; Compatible with existing Surface Mount Techniques; StrongIRFET | Target Applications: Battery Operated Drive; Battery Protection; eFuse; Full-Bridge; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; ORing; Point of Load SyncFET; Push-Pull
FDMx75x PowerTrench® MOSFETs & SyncFETs™
ON Semiconductor FDMx757x PowerTrench® MOSFETs and SyncFETs™ combine exceptional performance and high efficiency. The FDMC7570S and FDMC7572S PowerTrench SyncFETs are designed to minimize switching losses in power conversion applications. These SyncFETs offer low ON-resistance, maintain excellent switching performance, and add the benefit of an efficient monolithic Schottky body diode. The FDMS7578 and FDMS75780 MOSFETs improve the overall efficiency and minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs are optimized for low gate charge, low on-resistance, fast switching speed, and body diode reverse recovery performance.
부분 # 제조 설명 재고 가격
FDMC7570S
DISTI # V72:2272_06337875
ON SemiconductorTrans MOSFET N-CH Si 25V 27A 8-Pin Power 33 T/R2784
  • 1000:$1.5680
  • 500:$1.7650
  • 250:$1.9130
  • 100:$2.0120
  • 25:$2.0860
  • 10:$2.3180
  • 1:$2.9931
FDMC7570S
DISTI # V36:1790_06337875
ON SemiconductorTrans MOSFET N-CH Si 25V 27A 8-Pin Power 33 T/R0
  • 3000000:$1.2090
  • 1500000:$1.2100
  • 300000:$1.2420
  • 30000:$1.2840
  • 3000:$1.2900
FDMC7570S
DISTI # FDMC7570SCT-ND
ON SemiconductorMOSFET N-CH 25V 40A POWER33
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
3251In Stock
  • 1000:$1.5710
  • 500:$1.8628
  • 100:$2.1882
  • 10:$2.6710
  • 1:$2.9700
FDMC7570S
DISTI # FDMC7570SDKR-ND
ON SemiconductorMOSFET N-CH 25V 40A POWER33
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
3251In Stock
  • 1000:$1.5710
  • 500:$1.8628
  • 100:$2.1882
  • 10:$2.6710
  • 1:$2.9700
FDMC7570S
DISTI # FDMC7570STR-ND
ON SemiconductorMOSFET N-CH 25V 40A POWER33
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 6000:$1.3945
  • 3000:$1.4490
FDMC7570S
DISTI # 33954806
ON SemiconductorTrans MOSFET N-CH Si 25V 27A 8-Pin Power 33 T/R300000
  • 3000:$0.3375
FDMC7570S
DISTI # 32336673
ON SemiconductorTrans MOSFET N-CH Si 25V 27A 8-Pin Power 33 T/R2784
  • 5:$2.9931
FDMC7570S
DISTI # FDMC7570S
ON SemiconductorTrans MOSFET N-CH 25V 27A 8-Pin Power 33 T/R (Alt: FDMC7570S)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 30000:€1.2900
  • 18000:€1.3900
  • 12000:€1.4900
  • 6000:€1.7900
  • 3000:€2.1900
FDMC7570S
DISTI # FDMC7570S
ON SemiconductorTrans MOSFET N-CH 25V 27A 8-Pin Power 33 T/R - Bulk (Alt: FDMC7570S)
Min Qty: 218
Container: Bulk
Americas - 0
  • 436:$1.3900
  • 654:$1.3900
  • 1090:$1.3900
  • 2180:$1.3900
  • 218:$1.4900
FDMC7570S
DISTI # FDMC7570S
ON SemiconductorTrans MOSFET N-CH 25V 27A 8-Pin Power 33 T/R (Alt: FDMC7570S)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 0
  • 150000:$1.7010
  • 75000:$1.7293
  • 30000:$1.7890
  • 15000:$1.8529
  • 9000:$1.9215
  • 6000:$1.9954
  • 3000:$2.0752
FDMC7570S
DISTI # FDMC7570S
ON SemiconductorTrans MOSFET N-CH 25V 27A 8-Pin Power 33 T/R - Tape and Reel (Alt: FDMC7570S)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$1.1900
  • 3000:$1.2900
  • 6000:$1.2900
  • 12000:$1.2900
  • 18000:$1.2900
FDMC7570S
DISTI # 92R5533
ON SemiconductorMOSFET Transistor, N Channel, 40 A, 25 V, 0.0016 ohm, 10 V, 1.7 V0
  • 1:$1.3300
FDMC7570S
DISTI # 512-FDMC7570S
ON SemiconductorMOSFET 25V 40A 2mOhm N-CH PowerTrench SyncFET
RoHS: Compliant
4253
  • 1:$2.7400
  • 10:$2.3300
  • 100:$2.0200
  • 250:$1.9200
  • 500:$1.7200
  • 1000:$1.4500
  • 3000:$1.3800
  • 6000:$1.3200
FDMC7570SFairchild Semiconductor CorporationPower Field-Effect Transistor, 27A I(D), 25V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
RoHS: Compliant
22336
  • 1000:$1.5100
  • 500:$1.5900
  • 100:$1.6600
  • 25:$1.7300
  • 1:$1.8600
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Mfr.#: ADS1015IRUGT

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Mfr.#: PCA9536DP,118

OMO.#: OMO-PCA9536DP-118

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BAT1000-7-F

Mfr.#: BAT1000-7-F

OMO.#: OMO-BAT1000-7-F

Schottky Diodes & Rectifiers 1.0A 40V
TXB0104PWR

Mfr.#: TXB0104PWR

OMO.#: OMO-TXB0104PWR

Translation - Voltage Levels 4-Bit Bi-directional V-Level Translator
748421245

Mfr.#: 748421245

OMO.#: OMO-748421245

Signal Conditioning WE-BAL Chip Balun 50Ohm Size 0805
ADS1015IRUGT

Mfr.#: ADS1015IRUGT

OMO.#: OMO-ADS1015IRUGT-TEXAS-INSTRUMENTS

Analog to Digital Converters - ADC 12B ADC with Int MUX PGA Comp Osc and Ref
MIC5219-5.0YM5-TR

Mfr.#: MIC5219-5.0YM5-TR

OMO.#: OMO-MIC5219-5-0YM5-TR-MICROCHIP-TECHNOLOGY

LDO Voltage Regulators
TXB0104PWR

Mfr.#: TXB0104PWR

OMO.#: OMO-TXB0104PWR-TEXAS-INSTRUMENTS

Translation - Voltage Levels 4-Bit Bi-directional V-Level Translato
XC6201P252MR-G

Mfr.#: XC6201P252MR-G

OMO.#: OMO-XC6201P252MR-G-TOREX-SEMICONDUCTOR

LDO Voltage Regulators 10V Three Terminals Voltage Regulato
BAT1000-7-F

Mfr.#: BAT1000-7-F

OMO.#: OMO-BAT1000-7-F-DIODES

DIODE SCHOTTKY 40V 1A SOT23-3
유효성
재고:
Available
주문 시:
1987
수량 입력:
FDMC7570S의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$2.74
US$2.74
10
US$2.33
US$23.30
100
US$2.02
US$202.00
250
US$1.92
US$480.00
500
US$1.72
US$860.00
1000
US$1.45
US$1 450.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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