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IPN80R1K2P7ATMA1

IPN80R1K2P7ATMA1
Mfr. #:
IPN80R1K2P7ATMA1
제조사:
Infineon Technologies
설명:
COOLMOS P7 800V SOT-223
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPN80R1K2P7ATMA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IPN80R1K2P7ATMA1 추가 정보
제품 속성
속성 값
Tags
IPN80R1, IPN80, IPN8, IPN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
CoolMOS P7 Power Transistor MOSFET 800V 4.5A 3-Pin PG-SOT223 T/R
***ical
Trans MOSFET N-CH 800V 4.5A 3-Pin(2+Tab) SOT-223 T/R
***ronik
N-CH 800V 4,5A 1000mOhm SOT223
***ure Electronics
800V, 4.5A, 1.2 Ohms, SOT223
***i-Key
COOLMOS P7 800V SOT-223
***ark
Mosfet, N-Ch, 800V, 4.5A, 6.8W, Sot-223; Transistor Polarity:n Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:800V; On Resistance Rds(On):1Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 800V, 4.5A, 6.8W, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:6.8W; Transistor Case Style:SOT-223; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET CAN N, 800V, 4.5A, 6.8W, SOT-223; Polarità Transistor:Canale N; Corrente Continua di Drain Id:4.5A; Tensione Drain Source Vds:800V; Resistenza di Attivazione Rds(on):1ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:6.8W; Modello Case Transistor:SOT-223; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Summary of Features: Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss; Best-in-class DPAK R DS(on) of 280m; Best-in-class V (GS)th of 3V and smallest V (GS)th variation of 0.5V; Integrated Zener diode ESD protection up to Class 2 (HBM); Best-in-class quality and reliability; Fully optimized portfolio | Benefits: 0.1% to 0.6% efficiency gain and 2C to 8C lower MOSFET temperature as compared to CoolMOS C3; Enabling higher power density designs, BOM savings and lower assembly cost; Easy to drive and to design-in; Better production yield by reducing ESD related failures; Less production issues and reduced field returns; Easy to select right parts for fine tuning of designs | Target Applications: Adapter; LED; Audio; Industrial SMPS; AUX power
800V CoolMOS P7 MOSFETs
Infineon 800V CoolMOS P7 MOSFETs combine best-in-class performance with ease-of-use. The P7 set a new benchmark in 800V super junction technologies. The transistors offer up to 0.6 percent efficiency gain and 2°C to 8°C lower MOSFET temperature. The transistors feature optimized device parameters like over 50% reduction in Eoss and Qg, reduced Ciss and Coss. The CoolMOS P7 also enable higher power density designs through lower switching losses and better DPAK RDS(on) products. The CoolMOS P7 are a perfect fit for low-power SMPS applications.
부분 # 제조 설명 재고 가격
IPN80R1K2P7ATMA1
DISTI # V72:2272_19084644		Infineon Technologies AGIPN80R1K2P73000
  • 3000:$0.3913
  • 1000:$0.4412
  • 500:$0.5084
  • 250:$0.5869
  • 100:$0.6111
  • 25:$0.6525
  • 10:$0.7975
  • 1:$0.9603
IPN80R1K2P7ATMA1
DISTI # IPN80R1K2P7ATMA1TR-ND		Infineon Technologies AGCOOLMOS P7 800V SOT-223
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 15000:$0.3954
  • 6000:$0.4108
  • 3000:$0.4325
IPN80R1K2P7ATMA1
DISTI # IPN80R1K2P7ATMA1CT-ND		Infineon Technologies AGCOOLMOS P7 800V SOT-223
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.4773
  • 500:$0.6045
  • 100:$0.7318
  • 10:$0.9390
  • 1:$1.0500
IPN80R1K2P7ATMA1
DISTI # IPN80R1K2P7ATMA1DKR-ND		Infineon Technologies AGCOOLMOS P7 800V SOT-223
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.4773
  • 500:$0.6045
  • 100:$0.7318
  • 10:$0.9390
  • 1:$1.0500
IPN80R1K2P7ATMA1
DISTI # 33620974		Infineon Technologies AGIPN80R1K2P73000
  • 17:$0.9603
IPN80R1K2P7ATMA1
DISTI # 33356367		Infineon Technologies AGIPN80R1K2P73000
  • 3000:$0.3686
IPN80R1K2P7ATMA1
DISTI # IPN80R1K2P7ATMA1		Infineon Technologies AGCoolMOS P7 Power Transistor MOSFET 800V 4.5A 3-Pin PG-SOT223 T/R - Tape and Reel (Alt: IPN80R1K2P7ATMA1)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.3729
  • 18000:$0.3799
  • 12000:$0.3929
  • 6000:$0.4079
  • 3000:$0.4229
IPN80R1K2P7ATMA1
DISTI # SP001664998		Infineon Technologies AGCoolMOS P7 Power Transistor MOSFET 800V 4.5A 3-Pin PG-SOT223 T/R (Alt: SP001664998)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.3869
  • 18000:€0.4079
  • 12000:€0.4749
  • 6000:€0.5579
  • 3000:€0.6489
IPN80R1K2P7ATMA1
DISTI # 93AC7124		Infineon Technologies AGMOSFET, N-CH, 800V, 4.5A, 6.8W, SOT-223,Transistor Polarity:N Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:800V,On Resistance Rds(on):1ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes2970
  • 1000:$0.4460
  • 500:$0.5650
  • 250:$0.6020
  • 100:$0.6390
  • 50:$0.7040
  • 25:$0.7680
  • 10:$0.8320
  • 1:$0.9700
IPN80R1K2P7ATMA1
DISTI # 726-IPN80R1K2P7ATMA1		Infineon Technologies AGMOSFET LOW POWER_NEW
RoHS: Compliant		5384
  • 1:$0.9600
  • 10:$0.8240
  • 100:$0.6330
  • 500:$0.5590
  • 1000:$0.4420
  • 3000:$0.3920
  • 9000:$0.3770
IPN80R1K2P7ATMA1
DISTI # IPN80R1K2P7		Infineon Technologies AGTransistor: N-MOSFET,unipolar,800V,3.1A,6.8W,PG-SOT2232604
  • 500:$0.4700
  • 100:$0.5100
  • 20:$0.5600
  • 5:$0.6400
  • 1:$0.7100
IPN80R1K2P7ATMA1
DISTI # 2986362		Infineon Technologies AGMOSFET, N-CH, 800V, 4.5A, 6.8W, SOT-223
RoHS: Compliant		2970
  • 1000:$0.5890
  • 500:$0.6920
  • 250:$0.7520
  • 100:$0.8130
  • 25:$1.1700
  • 5:$1.2800
IPN80R1K2P7ATMA1
DISTI # 2986362		Infineon Technologies AGMOSFET, N-CH, 800V, 4.5A, 6.8W, SOT-2232970
  • 100:£0.5740
  • 10:£0.8120
  • 1:£0.9940
영상 부분 # 설명
IPN80R1K2P7ATMA1

Mfr.#: IPN80R1K2P7ATMA1

OMO.#: OMO-IPN80R1K2P7ATMA1

 MOSFET LOW POWER_NEW
IPN80R1K4P7ATMA1

Mfr.#: IPN80R1K4P7ATMA1

OMO.#: OMO-IPN80R1K4P7ATMA1

 MOSFET LOW POWER_NEW
IPN80R1K2P7ATMA1-CUT TAPE

Mfr.#: IPN80R1K2P7ATMA1-CUT TAPE

OMO.#: OMO-IPN80R1K2P7ATMA1-CUT-TAPE-1190

 신규 및 오리지널
IPN80R1K4P7ATMA1-CUT TAPE

Mfr.#: IPN80R1K4P7ATMA1-CUT TAPE

OMO.#: OMO-IPN80R1K4P7ATMA1-CUT-TAPE-1190

 신규 및 오리지널
IPN80R1K2P7ATMA1

Mfr.#: IPN80R1K2P7ATMA1

OMO.#: OMO-IPN80R1K2P7ATMA1-INFINEON-TECHNOLOGIES

 COOLMOS P7 800V SOT-223
IPN80R1K4P7

Mfr.#: IPN80R1K4P7

OMO.#: OMO-IPN80R1K4P7-1190

 신규 및 오리지널
IPN80R1K4P7ATMA1

Mfr.#: IPN80R1K4P7ATMA1

OMO.#: OMO-IPN80R1K4P7ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CHANNEL 800V 4A SOT223
유효성
재고:
Available
주문 시:
2000
수량 입력:
IPN80R1K2P7ATMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$0.55
US$0.55
10
US$0.53
US$5.26
100
US$0.50
US$49.84
500
US$0.47
US$235.35
1000
US$0.44
US$443.00
시작
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