OMO ElectronicOMO Electronic
Expand menu
0 카트

IRFSL4227PBF

IRFSL4227PBF
Mfr. #:
IRFSL4227PBF
제조사:
Infineon Technologies
설명:
Darlington Transistors MOSFET MOSFT 200V 65A 26mOhm 70nC
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IRFSL4227PBF 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFSL4227PBF DatasheetIRFSL4227PBF Datasheet (P4-P6)IRFSL4227PBF Datasheet (P7-P9)IRFSL4227PBF Datasheet (P10)
ECAD Model:
제품 속성
속성 값
제조사
IR
제품 카테고리
FET - 단일
포장
튜브
단위 무게
0.084199 oz
장착 스타일
구멍을 통해
패키지 케이스
I2PAK-3
기술
시
채널 수
1 Channel
구성
하나의
트랜지스터형
1 N-Channel
Pd 전력 손실
330 W
최대 작동 온도
+ 175 C
최소 작동 온도
- 40 C
가을철
31 ns
상승 시간
20 ns
Vgs 게이트 소스 전압
30 V
Id-연속-드레인-전류
62 A
Vds-드레인-소스-고장-전압
200 V
Rds-On-Drain-Source-Resistance
26 mOhms
트랜지스터 극성
N-채널
일반 꺼짐 지연 시간
21 ns
일반 켜기 지연 시간
33 ns
Qg-Gate-Charge
70 nC
순방향 트랜스컨덕턴스-최소
49 S
채널 모드
상승
Tags
IRFSL42, IRFSL4, IRFSL, IRFS, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
IRFSL4227PBF N-channel MOSFET Transistor, 62 A, 200 V, 3-Pin TO-262
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-262 package, TO262-3, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 62A I(D), 200V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***nell
MOSFET, N-CH, 200V, 62A, TO-262-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 62A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.022ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Po
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET Switch in a TO-262 package, TO262-3, RoHS
***Yang
Trans MOSFET N-CH 200V 72A 3-Pin(3+Tab) TO-262 Tube - Rail/Tube
***(Formerly Allied Electronics)
MOSFET, 200V, 76A, 23.2 MOHM, 100 NC QG, TO-262
*** Services
CoC and 2-years warranty / RFQ for pricing
***ark
HEXFET Power MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:72A; On Resistance, Rds(on):18.6mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:4-TO-262 ;RoHS Compliant: Yes
***(Formerly Allied Electronics)
IRFSL4321PBF N-channel MOSFET Transistor, 85 A, 150 V, 3-Pin TO-262
***ure Electronics
Single N-Channel 150 V 15 mOhm 110 nC HEXFET® Power Mosfet - TO-262
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
***ark
TUBE / MOSFET, 150V, 83A, 15 mOhm, 71 nC Qg, TO-262
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 75A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***nell
MOSFET, N-CH, 150V, 85A, TO-262-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 85A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.012ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Po
*** Electronics
INFINEON IRFSL38N20DPBF MOSFET Transistor, N Channel, 43 A, 200 V, 0.054 ohm, 10 V, 5 VNew
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
***(Formerly Allied Electronics)
MOSFET, 200V, 44A, 54 mOhm, 60 nC Qg, TO-262
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:44A; On Resistance, Rds(on):54mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***nell
MOSFET, N, 200V, D2-PAK; Transistor type:MOSFET; Voltage, Vds typ:200V; Current, Id cont:44A; Resistance, Rds on:54ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:5V; Case style:D2-PAK (TO-263); Current, Id cont @ 100 degree C:32A; Current, Id cont @ 25 degree C:44A; Current, Idm pulse:180A; Power, Pd:320W; Termination Type:SMD; Transistor polarity:N; Voltage, Rds measurement:10V; Voltage, Vds:200V; Voltage, Vds max:200V; Voltage, Vgs th max:5V; Voltage, Vgs th min:3V; Rth:0.47
***ernational Rectifier
200V Single N-Channel HEXFET Power MOSFET in a TO-262 package
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 24A I(D), 200V, 0.0775ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***ment14 APAC
MOSFET, N CH, 200V, 24A, TO262; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:200V; On Resistance Rds(on):63.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:144W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:24A; Package / Case:TO-262; Power Dissipation Pd:144W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:200V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V
***ure Electronics
Single N-Channel 400 V 0.55 Ohms Surface Mount Power Mosfet - TO-262
***nell
N CHANNEL MOSFET, 400V, 10A, I2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 400V; On Resistance Rds(on): 0.55ohm; Rds(on) Test Voltage Vgs: 10V; Threshold
***icontronic
Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***roFlash
Transistor, mosfet, n-Channel, 100V V(Br)Dss, 56A I(D), to-262Aa Rohs Compliant: Yes
***emi
N-Channel UltraFET Power MOSFET 100V, 56A, 25mΩ
***r Electronics
Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***ark
MOSFET, N-CH, 100V, 56A, TO-262AA; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:56A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***rchild Semiconductor
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
부분 # 제조 설명 재고 가격
IRFSL4227PBF
DISTI # IRFSL4227PBF-ND		Infineon Technologies AGMOSFET N-CH 200V 62A TO-262
RoHS: Compliant
Min Qty: 200
Container: Tube		Limited Supply - Call
    IRFSL4227PBF
    DISTI # 91Y4713    		Infineon Technologies AGMOSFET, N-CH, 200V, 62A, TO-262-3,Transistor Polarity:N Channel,Continuous Drain Current Id:62A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.022ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power , RoHS Compliant: Yes365
    • 1:$4.3200
    • 10:$3.6700
    • 25:$3.5100
    • 50:$3.3400
    • 100:$3.1800
    • 250:$3.0200
    • 500:$2.6900
    IRFSL4227PBF
    DISTI # 942-IRFSL4227PBF    		Infineon Technologies AGMOSFET MOSFT 200V 65A 26mOhm 70nC
    RoHS: Compliant    		0
      IRFSL4227PBFInternational Rectifier 
      RoHS: Compliant      		Europe - 150
        IRFSL4227PBF
        DISTI # 2580032        		Infineon Technologies AGMOSFET, N-CH, 200V, 62A, TO-262-3
        RoHS: Compliant        		365
        • 1:£3.6000
        • 10:£2.7400
        • 100:£2.3700
        • 250:£2.2500
        • 500:£2.0100
        IRFSL4227PBF
        DISTI # 2580032        		Infineon Technologies AGMOSFET, N-CH, 200V, 62A, TO-262-3
        RoHS: Compliant        		365
        • 1:$5.0800
        • 10:$4.7500
        • 100:$4.2000
        • 250:$3.9700
        • 500:$3.7700
        • 1000:$3.5800
        • 2500:$3.5200
        • 5000:$3.2600
        영상 부분 # 설명
        IRFSL4010PBF

        Mfr.#: IRFSL4010PBF

        OMO.#: OMO-IRFSL4010PBF

        		 MOSFET MOSFT 100V 180A 4.7mOhm 143nC
        IRFSL4321PBF

        Mfr.#: IRFSL4321PBF

        OMO.#: OMO-IRFSL4321PBF

        		 MOSFET MOSFT 150V 83A 15mOhm 71nC
        IRFSL4127PBF

        Mfr.#: IRFSL4127PBF

        OMO.#: OMO-IRFSL4127PBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 200V 72A TO-262
        IRFSL4410ZPBF

        Mfr.#: IRFSL4410ZPBF

        OMO.#: OMO-IRFSL4410ZPBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 100V 97A TO-262
        IRFSL4710PBF

        Mfr.#: IRFSL4710PBF

        OMO.#: OMO-IRFSL4710PBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 100V 75A TO-262
        IRFSL4310PBF

        Mfr.#: IRFSL4310PBF

        OMO.#: OMO-IRFSL4310PBF-INFINEON-TECHNOLOGIES

        		 Darlington Transistors MOSFET MOSFT 100V 140A 7mOhm 170nC
        IRFSL4010PBF

        Mfr.#: IRFSL4010PBF

        OMO.#: OMO-IRFSL4010PBF-INFINEON-TECHNOLOGIES

        		 IGBT Transistors MOSFET MOSFT 100V 180A 4.7mOhm 143nC
        IRFSL41N15D

        Mfr.#: IRFSL41N15D

        OMO.#: OMO-IRFSL41N15D-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 150V 41A TO-262
        IRFSL4310

        Mfr.#: IRFSL4310

        OMO.#: OMO-IRFSL4310-1190

        		 신규 및 오리지널
        IRFSL4615PBF

        Mfr.#: IRFSL4615PBF

        OMO.#: OMO-IRFSL4615PBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 150V 33A TO-262
        유효성
        재고:
        Available
        주문 시:
        5000
        수량 입력:
        IRFSL4227PBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
        참고 가격(USD)
        수량
        단가
        내선 가격
        1
        US$3.90
        US$3.90
        10
        US$3.70
        US$37.05
        100
        US$3.51
        US$351.00
        500
        US$3.32
        US$1 657.50
        1000
        US$3.12
        US$3 120.00
        시작
        최신 제품
        • Mid-Range+ System Basis Chip (SBC)
          Mid-Range+ System Basis Chip (SBC)
          Infineon’s Mid-Range+ SBC is an integrated circuit with combined power, communication, safety, and support features all in one device.
        • Compare IRFSL4227PBF
          Compare IRFSL4227PBF
          IRFSL4227PBF vs IRFSL4228PBF vs IRFSL4229PBF
        • XDPL8221 Lighting Controller
          XDPL8221 Lighting Controller
          Infineon's XDPL8221 highly integrated digital AC/DC controller combines quasi-resonant PFC and quasi-resonant flyback controller with primary side regulation.
        • XC9140 Series DC/DC Converter
          XC9140 Series DC/DC Converter
          Torex's XC9140 series DC/DC converter used for high efficiency consumer applications like keyboards, Bluetooth, and household medical equipment.
        • XC9261 Series Step-Down DC/DC Converters
          XC9261 Series Step-Down DC/DC Converters
          Torex's 1.5 A synchronous step-down DC/DC converter with high speed transient response control feature that provides excellent load transient response.
        • µHVIC™ IRSxx752L Family
          µHVIC™ IRSxx752L Family
          Infineon Technologies' IRSxx752L are high-side, single-channel gate driver ICs with 600 V (IRS25752L), 200 V (IRS20752L), or 100 V (IRS10752L) blocking and level shifting capability.
        More Newest Products
        Top