IPB60R190C6

IPB60R190C6
Mfr. #:
IPB60R190C6
제조사:
Infineon Technologies
설명:
MOSFET N-Ch 600V 20.2A D2PAK-2 CoolMOS C6
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPB60R190C6 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IPB60R190C6 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
TO-263-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
600 V
Id - 연속 드레인 전류:
20.2 A
Rds On - 드레인 소스 저항:
170 mOhms
Vgs th - 게이트 소스 임계 전압:
2.5 V
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
63 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
151 W
구성:
하나의
채널 모드:
상승
상표명:
쿨모스
포장:
키:
4.4 mm
길이:
10 mm
시리즈:
CoolMOS C6
트랜지스터 유형:
1 N-Channel
너비:
9.25 mm
상표:
인피니언 테크놀로지스
가을 시간:
9 ns
상품 유형:
MOSFET
상승 시간:
11 ns
공장 팩 수량:
1000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
110 ns
일반적인 켜기 지연 시간:
15 ns
부품 번호 별칭:
IPB60R190C6ATMA1 IPB6R19C6XT SP000641916
단위 무게:
0.139332 oz
Tags
IPB60R190C, IPB60R190, IPB60R19, IPB60R1, IPB60R, IPB60, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
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부분 # 제조 설명 재고 가격
IPB60R190C6ATMA1
DISTI # IPB60R190C6ATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 600V 20.2A TO263
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
On Order
  • 1000:$1.6261
IPB60R190C6ATMA1
DISTI # IPB60R190C6ATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 600V 20.2A TO263
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
  • 500:$1.9859
  • 100:$2.4525
  • 10:$2.9910
  • 1:$3.3500
IPB60R190C6ATMA1
DISTI # IPB60R190C6ATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 600V 20.2A TO263
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Limited Supply - Call
  • 500:$1.9859
  • 100:$2.4525
  • 10:$2.9910
  • 1:$3.3500
IPB60R190C6
DISTI # IPB60R190C6
Infineon Technologies AGTrans MOSFET N-CH 650V 20.2A 4-Pin TO-263 T/R (Alt: IPB60R190C6)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Asia - 0
    IPB60R190C6
    DISTI # SP000641916
    Infineon Technologies AGTrans MOSFET N-CH 650V 20.2A 4-Pin TO-263 T/R (Alt: SP000641916)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel
    Europe - 0
    • 1000:€1.6900
    • 2000:€1.3900
    • 4000:€1.2900
    • 6000:€1.1900
    • 10000:€1.0900
    IPB60R190C6
    DISTI # SP000641916
    Infineon Technologies AGTrans MOSFET N-CH 650V 20.2A 4-Pin TO-263 T/R (Alt: SP000641916)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel
    Europe - 0
    • 1000:€1.1900
    • 2000:€1.1900
    • 4000:€1.1900
    • 6000:€1.1900
    • 10000:€1.1900
    IPB60R190C6XT
    DISTI # IPB60R190C6ATMA1
    Infineon Technologies AGTrans MOSFET N-CH 600V 20.2A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB60R190C6ATMA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel
    Americas - 0
    • 1000:$1.4900
    • 2000:$1.3900
    • 4000:$1.3900
    • 6000:$1.2900
    • 10000:$1.2900
    IPB60R190C6ATMA1
    DISTI # 30T1830
    Infineon Technologies AGMOSFET,N CH,600V,20.2A,TO263,Transistor Polarity:N Channel,Continuous Drain Current Id:20.2A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.17ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes0
    • 1:$2.8600
    • 10:$2.4300
    • 100:$1.9500
    • 500:$1.8000
    • 1000:$1.6200
    • 2500:$1.3100
    • 5000:$1.2700
    IPB60R190C6
    DISTI # 726-IPB60R190C6
    Infineon Technologies AGMOSFET N-Ch 600V 20.2A D2PAK-2 CoolMOS C6
    RoHS: Compliant
    0
    • 1:$2.8000
    • 10:$2.3800
    • 100:$2.0600
    • 250:$1.9600
    • 500:$1.7600
    • 1000:$1.4800
    IPB60R190C6ATMA1
    DISTI # 726-IPB60R190C6ATMA1
    Infineon Technologies AGMOSFET N-Ch 600V 20.2A D2PAK-2 CoolMOS C6
    RoHS: Compliant
    0
    • 1:$2.8000
    • 10:$2.3800
    • 100:$2.0600
    • 250:$1.9600
    • 500:$1.7600
    • 1000:$1.4800
    IPB60R190C6Infineon Technologies AGPower Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant
    3
    • 1000:$1.2800
    • 500:$1.3400
    • 100:$1.4000
    • 25:$1.4600
    • 1:$1.5700
    IPB60R190C6ATMA1
    DISTI # 7533005P
    Infineon Technologies AGMOSFET N-CH 650V 20.2A COOLMOS C6 TO263, RL200
    • 10:£1.8200
    • 50:£1.6400
    • 250:£1.4600
    • 500:£1.2800
    IPB60R190C6ATMA1
    DISTI # IPB60R190C6ATMA1
    Infineon Technologies AGTransistor: N-MOSFET,unipolar,600V,20.2A,151W,PG-TO263-3133
    • 1:$2.9700
    • 3:$2.5500
    • 10:$2.0500
    • 100:$1.7800
    IPB60R190C6Infineon Technologies AG600V,20.2A,N channel Power MOSFET7
    • 1:$2.3200
    • 100:$1.9400
    • 500:$1.7100
    • 1000:$1.6600
    IPB60R190C6ATMA1
    DISTI # 1860814
    Infineon Technologies AGMOSFET,N CH,600V,20.2A,TO263
    RoHS: Compliant
    0
    • 1:£2.5700
    • 10:£1.7500
    • 100:£1.6500
    • 250:£1.5600
    • 500:£1.3700
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    유효성
    재고:
    Available
    주문 시:
    1988
    수량 입력:
    IPB60R190C6의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$2.79
    US$2.79
    10
    US$2.37
    US$23.70
    100
    US$2.06
    US$206.00
    250
    US$1.95
    US$487.50
    500
    US$1.75
    US$875.00
    시작
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