FCA16N60N

Mfr. #:: FCA16N60N
제조사:: ON Semiconductor
설명:: Darlington Transistors MOSFET SupreMOS 16A
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: FCA16N60N 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

제품 속성
속성 값

제조사: FSC

제품 카테고리: FET - 단일

포장: 튜브

단위 무게: 0.225789 oz

장착 스타일: 구멍을 통해

패키지 케이스: TO-3P-3

기술: 시

채널 수: 1 Channel

구성: 하나의

트랜지스터형: 1 N-Channel

Pd 전력 손실: 134.4 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 20.2 ns

상승 시간: 15.5 ns

Vgs 게이트 소스 전압: 30 V

Id-연속-드레인-전류: 16 A

Vds-드레인-소스-고장-전압: 600 V

Rds-On-Drain-Source-Resistance: 170 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 60.3 ns

일반 켜기 지연 시간: 15.8 ns

순방향 트랜스컨덕턴스-최소: 20 S

채널 모드: 상승

Tags: FCA16, FCA1, FCA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FCA16N60N 설명

***Semiconductor: N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 16 A, 199 mΩ, TO-3P

***ure Electronics: FCA16N60N Series 600 V 0.199 Ohm N-Channel SupreMOS MOSFET - TO-3PN

***et: Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-3P(N) Rail

***ical: Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-3PN Tube

***Components: MOSFET SuperMOS canal N 600 V 16A TO-3

***ter Electronics: 600V N-CHANNEL MOSFET SUPREMOS

***i-Key: MOSFET N-CH 600V TO-3PN

***inecomponents.com: SupreMOS, 16A in TO3PN

***nell: MOSFET Transistor

***ark: MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V ;RoHS Compliant: Yes

***rchild Semiconductor: The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Market price

부분 #	제조	설명	재고	가격
FCA16N60N DISTI # FCA16N60N-ND	ON Semiconductor	MOSFET N-CH 600V TO-3PN RoHS: Compliant Min Qty: 1 Container: Tube	445In Stock	1350:$3.4173 900:$3.6614 450:$4.5157 10:$6.1020 1:$6.8300
FCA16N60N DISTI # FCA16N60N	ON Semiconductor	Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: FCA16N60N) RoHS: Compliant Min Qty: 1	Europe - 0	1:€3.4900 10:€3.1900 25:€2.9900 50:€2.8900 100:€2.7900 500:€2.6900 1000:€2.4900
FCA16N60N DISTI # FCA16N60N	ON Semiconductor	Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FCA16N60N) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 0	450:$2.8900 900:$2.7900 1800:$2.7900 2700:$2.7900 4500:$2.6900
FCA16N60N DISTI # 64R2975	ON Semiconductor	MOSFET Transistor,Transistor Polarity:N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.17ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:134.4W RoHS Compliant: Yes	0	1:$5.8800 10:$5.0000 25:$4.7800 50:$4.5500 100:$4.3300 250:$4.1100 500:$3.6900
FCA16N60N DISTI # 512-FCA16N60N	ON Semiconductor	MOSFET SupreMOS 16A RoHS: Compliant	746	1:$5.8800 10:$5.0000 100:$4.3300 250:$4.1100 500:$3.6900 1000:$3.1100 2500:$2.9600
FCA16N60N DISTI # 7599437P	ON Semiconductor	MOSFET N-CH 600V 16A SUPREMOS TO-3P(N), TU	457	5:£2.0700

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