IPN80R2K4P7ATMA1

Mfr. #:: IPN80R2K4P7ATMA1
제조사:: Infineon Technologies
설명:: MOSFET LOW POWER_NEW
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IPN80R2K4P7ATMA1 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: SOT-223-3

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 800 V

Id - 연속 드레인 전류:: 2.5 A

Rds On - 드레인 소스 저항:: 2 Ohms

Vgs th - 게이트 소스 임계 전압:: 3.5 V

Vgs - 게이트 소스 전압:: 30 V

Qg - 게이트 차지:: 7.5 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 6.3 W

구성:: 하나의

채널 모드:: 상승

포장:: 릴

트랜지스터 유형:: 1 N-Channel

상표:: 인피니언 테크놀로지스

가을 시간:: 30 ns

상품 유형:: MOSFET

상승 시간:: 10 ns

공장 팩 수량:: 3000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 40 ns

일반적인 켜기 지연 시간:: 8 ns

부품 번호 별칭:: IPN80R2K4P7 SP001664994

Tags: IPN80R2, IPN80, IPN8, IPN

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPN80R2K4P7ATMA1 설명

***et Europe: CoolMOS P7 Power Transistor MOSFET 800V 2.5A 3-Pin PG-SOT223 T/R

***ical: Trans MOSFET N-CH 800V 2.5A 3-Pin(2+Tab) SOT-223 T/R

***ronik: N-CH 800V 2,5A 2000mOhm SOT223

***i-Key: COOLMOS P7 800V SOT-223

***ark: Mosfet, N-Ch, 800V, 2.5A, 6.3W, Sot-223; Transistor Polarity:n Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:800V; On Resistance Rds(On):2Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 800V, 2.5A, 6.3W, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:800V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:6.3W; Transistor Case Style:SOT-223; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET CAN N, 800V, 2.5A, 6.3W, SOT-223; Polarità Transistor:Canale N; Corrente Continua di Drain Id:2.5A; Tensione Drain Source Vds:800V; Resistenza di Attivazione Rds(on):2ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:6.3W; Modello Case Transistor:SOT-223; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: Summary of Features: Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss; Best-in-class DPAK R DS(on) of 280m; Best-in-class V (GS)th of 3V and smallest V (GS)th variation of 0.5V; Integrated Zener diode ESD protection up to Class 2 (HBM); Best-in-class quality and reliability; Fully optimized portfolio | Benefits: 0.1% to 0.6% efficiency gain and 2C to 8C lower MOSFET temperature as compared to CoolMOS C3; Enabling higher power density designs, BOM savings and lower assembly cost; Easy to drive and to design-in; Better production yield by reducing ESD related failures; Less production issues and reduced field returns; Easy to select right parts for fine tuning of designs | Target Applications: Adapter; LED; Audio; Industrial SMPS; AUX power

Market price

부분 #	제조	설명	재고	가격
IPN80R2K4P7ATMA1 DISTI # V72:2272_19084645	Infineon Technologies AG	IPN80R2K4P7	2245	1000:$0.3059 500:$0.3211 250:$0.3568 100:$0.3963 25:$0.5634 10:$0.6886 1:$0.8254
IPN80R2K4P7ATMA1 DISTI # IPN80R2K4P7ATMA1CT-ND	Infineon Technologies AG	COOLMOS P7 800V SOT-223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3391In Stock	1000:$0.3525 500:$0.4406 100:$0.5574 10:$0.7270 1:$0.8300
IPN80R2K4P7ATMA1 DISTI # IPN80R2K4P7ATMA1DKR-ND	Infineon Technologies AG	COOLMOS P7 800V SOT-223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3391In Stock	1000:$0.3525 500:$0.4406 100:$0.5574 10:$0.7270 1:$0.8300
IPN80R2K4P7ATMA1 DISTI # IPN80R2K4P7ATMA1TR-ND	Infineon Technologies AG	COOLMOS P7 800V SOT-223 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	15000:$0.2852 6000:$0.2888 3000:$0.3101
IPN80R2K4P7ATMA1 DISTI # 30294848	Infineon Technologies AG	IPN80R2K4P7	3000	30000:$0.2553 18000:$0.2603 12000:$0.2692 6000:$0.2791 3000:$0.2900
IPN80R2K4P7ATMA1 DISTI # 28955736	Infineon Technologies AG	IPN80R2K4P7	2245	1000:$0.3288 500:$0.3452 250:$0.3836 100:$0.4260 25:$0.6057
IPN80R2K4P7ATMA1 DISTI # IPN80R2K4P7ATMA1	Infineon Technologies AG	CoolMOS P7 Power Transistor MOSFET 800V 2.5A 3-Pin PG-SOT223 T/R - Tape and Reel (Alt: IPN80R2K4P7ATMA1) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 3000	30000:$0.2579 18000:$0.2629 12000:$0.2719 6000:$0.2819 3000:$0.2929
IPN80R2K4P7ATMA1 DISTI # 93AC7127	Infineon Technologies AG	MOSFET, N-CH, 800V, 2.5A, 6.3W, SOT-223,Transistor Polarity:N Channel,Continuous Drain Current Id:2.5A,Drain Source Voltage Vds:800V,On Resistance Rds(on):2ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes	2780	1000:$0.3290 500:$0.3570 250:$0.3840 100:$0.4120 50:$0.4870 25:$0.5630 10:$0.6380 1:$0.7680
IPN80R2K4P7ATMA1 DISTI # 726-IPN80R2K4P7ATMA1	Infineon Technologies AG	MOSFET LOW POWER_NEW RoHS: Compliant	4129	1:$0.7600 10:$0.6320 100:$0.4080 1000:$0.3260
IPN80R2K4P7ATMA1 DISTI # IPN80R2K4P7	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,800V,1.7A,6.3W,PG-SOT223	2987	500:$0.3268 100:$0.3552 20:$0.3917 5:$0.4384 1:$0.5841
IPN80R2K4P7ATMA1 DISTI # 2986478	Infineon Technologies AG	MOSFET, N-CH, 800V, 2.5A, 6.3W, SOT-223	2780	500:£0.2590 250:£0.2790 100:£0.2980 25:£0.4760 5:£0.5210
IPN80R2K4P7ATMA1 DISTI # XSKDRABS0031939	Infineon Technologies AG	DS1990SERIES6V1-WIRESMARTCARDINTERFACEIC-IBUTTON-F5 RoHS: Compliant	9000 in Stock0 on Order	9000:$0.3805 3000:$0.4076
IPN80R2K4P7ATMA1 DISTI # 2986478	Infineon Technologies AG	MOSFET, N-CH, 800V, 2.5A, 6.3W, SOT-223 RoHS: Compliant	2780	1000:$0.4080 500:$0.4590 250:$0.4990 100:$0.5390 25:$0.7700 5:$0.8460

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IPN80R2K4P7ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes