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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| BSP315P-E6327 DISTI # BSP315PINTR-ND | Infineon Technologies AG | MOSFET P-CH 60V 1.17A SOT-223 Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSP315P-E6327 DISTI # BSP315PINCT-ND | Infineon Technologies AG | MOSFET P-CH 60V 1.17A SOT-223 Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSP315PE6327T DISTI # BSP315PXTINTR-ND | Infineon Technologies AG | MOSFET P-CH 60V 1.17A SOT-223 Min Qty: 4000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSP315PE6327T DISTI # BSP315PXTINCT-ND | Infineon Technologies AG | MOSFET P-CH 60V 1.17A SOT-223 Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSP315PE6327T DISTI # BSP315PXTINDKR-ND | Infineon Technologies AG | MOSFET P-CH 60V 1.17A SOT-223 Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSP315 E6327 | Siemens | 2000 | ||
| BSP315E-6327 | Infineon Technologies AG | 1.1 A, 50 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET | 1000 | |
| BSP315E-6327 | Infineon Technologies AG | 1.1 A, 50 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET | 801 |
|
| BSP315E6327 | Infineon Technologies AG | Power Field-Effect Transistor, 1.1A I(D), 50V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | Europe - 8900 |
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: BSP315 E6327 OMO.#: OMO-BSP315-E6327-1190 |
Power Field-Effect Transistor, 1.1A I(D), 50V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSP315 E6327 , TEA1792AT |
신규 및 오리지널 |