STD3NK80Z-1

STD3NK80Z-1
Mfr. #:
STD3NK80Z-1
제조사:
STMicroelectronics
설명:
MOSFET N-Ch, 800V-3.8ohms Zener SuperMESH 2.5A
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
STD3NK80Z-1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
STD3NK80Z-1 추가 정보 STD3NK80Z-1 Product Details
제품 속성
속성 값
제조사:
ST마이크로일렉트로닉스
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
구멍을 통해
패키지/케이스:
TO-251-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
800 V
Id - 연속 드레인 전류:
2.5 A
Rds On - 드레인 소스 저항:
4.5 Ohms
Vgs th - 게이트 소스 임계 전압:
4.5 V
Vgs - 게이트 소스 전압:
30 V
Qg - 게이트 차지:
19 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
70 W
구성:
하나의
채널 모드:
상승
상표명:
슈퍼메시
포장:
튜브
키:
6.2 mm
길이:
6.6 mm
시리즈:
STD3NK80Z-1
트랜지스터 유형:
1 N-Channel
너비:
2.4 mm
상표:
ST마이크로일렉트로닉스
순방향 트랜스컨덕턴스 - 최소:
2.1 S
가을 시간:
40 ns
상품 유형:
MOSFET
상승 시간:
27 ns
공장 팩 수량:
3000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
36 ns
일반적인 켜기 지연 시간:
17 ns
단위 무게:
0.139332 oz
Tags
STD3NK80Z-1, STD3NK80Z, STD3NK80, STD3NK8, STD3NK, STD3N, STD3, STD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-CHANNEL 800V - 3.8 Ohm - 2.5A IPAK Zener-Protected SuperMESH™ Power MOSFET
*** Electronics
STMICROELECTRONICS STD3NK80Z-1 Power MOSFET, N Channel, 1.25 A, 800 V, 3.8 ohm, 10 V, 3.75 V
***ark
MOSFET, N CHANNEL, 800V, 2.5A, TO-251; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:2.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 2.5A I(D), 800V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***icroelectronics
N-CHANNEL 900V - 5.5 Ohm - 2.1A - DPAK ZENER-PROTECTED SUPERMESH MOSFET
***va Crawler
N-channel 900 V, 5 Ohm typ., 2.1 A SuperMESH Power MOSFET in IPAK package
***ark
MOSFET, N CHANNEL, 900V, 2.1A, IPAK; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:1.05A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:-RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 2.1A I(D), 900V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***icroelectronics
N-CHANNEL 800V - 3 OHM - 3A IPAK Zener-Protected SuperMESH(TM) Power MOSFET
***ure Electronics
N-Channel 800 V 3.5 Ohm Through Hole SuperMESH Power Mosfet - IPAK
***va Crawler
N-channel 800 V, 2.7 Ohm typ., 3 A SuperMESH Power MOSFET in an IPAK package
***r Electronics
Power Field-Effect Transistor, 3A I(D), 800V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***icroelectronics
N-channel 620 V, 3 Ohm, 2.2 A, IPAK SuperMESH3(TM) Power MOSFET
***r Electronics
Power Field-Effect Transistor, 2.2A I(D), 620V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***ment14 APAC
MOSFET, N CH, 620V, 2.2A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2.2A; Drain Source Voltage Vds:620V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:45W; Transistor Case Style:TO-251; No. of Pins:3; SVHC:No SVHC (19-Dec-2012)
***emi
N-Channel Power MOSFET, SUPERFET® II, 800 V, 2.6 A, 2.25 Ω, IPAK
***r Electronics
Power Field-Effect Transistor, 2.6A I(D), 800V, 2.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Linghting, ATX power and industrial power applications.
***i-Key
MOSFET N-CH 600V 2.4A IPAK
***ser
MOSFETs 600V N-Channel QFET
***el Nordic
Contact for details
***emi
N-Channel Power MOSFET, SUPERFET® II, 800 V, 2 A, 3.4 Ω, IPAK
***ark
SuperFET2 800V 3400 mOhm Zener embedded, IPAK PKG - TO-251 (I-PAK) MOLDED, 3 LEAD OPTION AA
***r Electronics
Power Field-Effect Transistor, 2A I(D), 800V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
부분 # 제조 설명 재고 가격
STD3NK80Z-1
DISTI # 497-12557-5-ND
STMicroelectronicsMOSFET N-CH 800V 2.5A IPAK
RoHS: Compliant
Min Qty: 3000
Container: Tube
Temporarily Out of Stock
  • 3000:$0.7796
STD3NK80Z-1
DISTI # STD3NK80Z-1
STMicroelectronicsTrans MOSFET N-CH 800V 2.5A 3-Pin(3+Tab) IPAK Tube - Rail/Tube (Alt: STD3NK80Z-1)
RoHS: Compliant
Min Qty: 3000
Container: Tube
Americas - 0
  • 3000:$0.7869
  • 6000:$0.7499
  • 12000:$0.7159
  • 18000:$0.6839
  • 30000:$0.6699
STD3NK80Z-1
DISTI # 33R1154
STMicroelectronicsMOSFET, N CHANNEL, 800V, 2.5A, TO-251,Transistor Polarity:N Channel,Continuous Drain Current Id:2.5A,Drain Source Voltage Vds:800V,On Resistance Rds(on):3.8ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.75V,MSL:-827
  • 1:$1.7700
  • 10:$1.5300
  • 100:$1.1500
  • 500:$0.9840
  • 1000:$0.8500
  • 2500:$0.6930
  • 10000:$0.6580
STD3NK80Z-1
DISTI # 511-STD3NK80Z-1
STMicroelectronicsMOSFET N-Ch, 800V-3.8ohms Zener SuperMESH 2.5A
RoHS: Compliant
2501
  • 1:$1.5500
  • 10:$1.3200
  • 100:$1.0500
  • 500:$0.9190
  • 1000:$0.7620
  • 3000:$0.7090
  • 6000:$0.6830
  • 9000:$0.6570
STD3NK80Z-1
DISTI # 6875352P
STMicroelectronicsMOSFET N-CH 800V 2.5A SUPERMESH IPAK, TU169
  • 25:£0.9520
  • 50:£0.8560
  • 125:£0.7600
  • 250:£0.7300
STD3NK80Z-1
DISTI # XSFP00000156491
STMicroelectronicsPowerField-EffectTransistor,2.5AI(D),800V,4.5ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET,TO-251
RoHS: Compliant
20997
  • 450:$0.4500
  • 20997:$0.4091
STD3NK80Z-1
DISTI # 1752036
STMicroelectronicsMOSFET, N CH, 800V, 2.5A, IPAK
RoHS: Compliant
827
  • 1:$2.4600
  • 10:$2.0900
  • 100:$1.6600
  • 500:$1.4500
  • 1000:$1.2100
  • 3000:$1.1300
  • 6000:$1.0900
  • 9000:$1.0400
STD3NK80Z-1
DISTI # 1752036
STMicroelectronicsMOSFET, N CH, 800V, 2.5A, IPAK
RoHS: Compliant
827
  • 5:£1.2300
  • 25:£0.9130
  • 100:£0.8100
  • 250:£0.7780
  • 500:£0.7410
영상 부분 # 설명
STRVS185X02B

Mfr.#: STRVS185X02B

OMO.#: OMO-STRVS185X02B

TVS Diodes / ESD Suppressors Rep Volt Suppressor TVS 185V Ipp 2A
STRVS280X02F

Mfr.#: STRVS280X02F

OMO.#: OMO-STRVS280X02F

TVS Diodes / ESD Suppressors Rep Volt Suppressor TVS 280V Ipp 2A
MMSZ4696T1G

Mfr.#: MMSZ4696T1G

OMO.#: OMO-MMSZ4696T1G

Zener Diodes 9.1V 500mW
ES1D-13-F

Mfr.#: ES1D-13-F

OMO.#: OMO-ES1D-13-F

Rectifiers 200V 1A
US1K-13-F

Mfr.#: US1K-13-F

OMO.#: OMO-US1K-13-F

Rectifiers 800V 1A
LTV-817S

Mfr.#: LTV-817S

OMO.#: OMO-LTV-817S

Transistor Output Optocouplers Optocoupler Phototrans
GRM55DR72J224KW01L

Mfr.#: GRM55DR72J224KW01L

OMO.#: OMO-GRM55DR72J224KW01L

Multilayer Ceramic Capacitors MLCC - SMD/SMT 2220 0.22uF 630volts X7R 10%
0312-0-15-15-34-27-10-0

Mfr.#: 0312-0-15-15-34-27-10-0

OMO.#: OMO-0312-0-15-15-34-27-10-0

Circuit Board Hardware - PCB 10u AU OVER NI 34 CON
SDR0403-2R2ML

Mfr.#: SDR0403-2R2ML

OMO.#: OMO-SDR0403-2R2ML

Fixed Inductors 2.2uH 20% SMD 0403
STRVS185X02B

Mfr.#: STRVS185X02B

OMO.#: OMO-STRVS185X02B-STMICROELECTRONICS

TVS DIODE 128V 185V SMB
유효성
재고:
Available
주문 시:
1986
수량 입력:
STD3NK80Z-1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$1.54
US$1.54
10
US$1.31
US$13.10
100
US$1.05
US$105.00
500
US$0.92
US$459.50
1000
US$0.76
US$762.00
3000
US$0.71
US$2 127.00
6000
US$0.68
US$4 098.00
9000
US$0.66
US$5 913.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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