NGTB20N120IHRWG

Mfr. #:: NGTB20N120IHRWG
제조사:: ON Semiconductor
설명:: IGBT Transistors 1200V/20A RC IGBT FSII
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: NGTB20N120IHRWG 데이터 시트
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ECAD Model:
추가 정보:: NGTB20N120IHRWG 추가 정보

제품 속성
속성 값

제조사

제품 카테고리: IGBT - 싱글

시리즈: NGTB20N120IHR

포장: 튜브

단위 무게: 0.229281 oz

장착 스타일: 구멍을 통해

패키지 케이스: TO-247-3

입력 유형: 기준

장착형: 구멍을 통해

공급자-장치-패키지: TO-247

구성: 하나의

파워맥스: 384W

역복구-시간-trr: -

전류 수집기 Ic-Max: 40A

Voltage-Collector-Emitter-Breakdown-Max: 1200V

IGBT형: 트렌치 필드 스톱

전류 수집기 펄스 Icm: 120A

Vce-on-Max-Vge-Ic: 2.45V @ 15V, 20A

스위칭 에너지: 450μJ (off)

게이트 차지: 225nC

Td-on-off-25°C: -/235ns

시험조건: 600V, 20A, 10 Ohm, 15V

Pd 전력 손실: 384 W

최대 작동 온도: + 175 C

최소 작동 온도: - 55 C

컬렉터-이미터-전압-VCEO-최대: 1200 V

컬렉터-이미터-포화-전압: 2.1 V

연속 수집기 전류 at-25-C: 40 A

게이트 이미 터 누설 전류: 100 nA

최대 게이트 이미 터 전압: 20 V

Tags: NGTB20N120IHR, NGTB20N120I, NGTB20N12, NGTB20N1, NGTB20N, NGTB20, NGTB2, NGTB, NGT

Service Guarantees

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NGTB20N120IHRWG 설명

***ical: Trans IGBT Chip N-CH 1200V 40A 384000mW 3-Pin(3+Tab) TO-247 Tube

***Semiconductor: IGBT, 1200V 20A FS2-RC Induction Heating

***Components: In a Tube of 30, ON Semiconductor NGTB20N120IHRWG IGBT

***ment14 APAC: TRANSISTOR, IGBT, 2.1V, 40A, TO-247-3

NGTB20N120IHRWG 추가 정보

NGTB20Nx IGBTs with Monolithic Free Wheeling Diode: ON Semiconductor's NGTB20Nx IGBTs with Monolithic Free Wheeling Diode are Insulated Gate Bipolar Transistors (IGBTs) that features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage with minimal switching loss. Typical applications for these IGBTs include inductive heating, consumer appliances, resonant and soft switching.Learn More

Market price

부분 #	제조	설명	재고	가격
NGTB20N120IHRWG DISTI # 26897924	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 40A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	45180	5000:$2.1582 2500:$2.2473 1000:$2.3562 500:$2.8017 250:$3.1185 180:$3.2868
NGTB20N120IHRWG DISTI # NGTB20N120IHRWGOS-ND	ON Semiconductor	IGBT 1200V 40A 384W TO247 RoHS: Compliant Min Qty: 1 Container: Tube	84In Stock	2520:$2.3800 510:$2.9631 120:$3.4808 30:$4.0163 10:$4.2480 1:$4.7300
NGTB20N120IHRWG DISTI # V36:1790_07278481	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 40A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	0
NGTB20N120IHRWG DISTI # NGTB20N120IHRWG	ON Semiconductor	Trans IGBT Chip N-CH 1200V 40A 3-Pin TO-247 Rail - Bulk (Alt: NGTB20N120IHRWG) Min Qty: 133 Container: Bulk	Americas - 0	665:$2.2900 1330:$2.2900 133:$2.3900 266:$2.3900 399:$2.3900
NGTB20N120IHRWG DISTI # 45AC7429	ON Semiconductor	TRANSISTOR, IGBT, 2.1V, 40A, TO-247-3,DC Collector Current:40A,Collector Emitter Saturation Voltage Vce(on):2.1V,Power Dissipation Pd:384W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:TO-247,No. of Pins:3Pins, RoHS Compliant: Yes	63	500:$2.8600 250:$3.1800 100:$3.3500 50:$3.5200 25:$3.7000 10:$3.8700 1:$4.5500
NGTB20N120IHRWG. DISTI # 14AC9854	ON Semiconductor	DC Collector Current:40A,Collector Emitter Saturation Voltage Vce(on):2.1V,Power Dissipation Pd:384W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:175°C,Product Range:-,MSL:- RoHS Compliant: Yes	0	500:$2.8600 250:$3.1800 100:$3.3500 50:$3.5200 25:$3.7000 10:$3.8700 1:$4.5500
NGTB20N120IHRWG DISTI # 863-NGTB20N120IHRWG	ON Semiconductor	IGBT Transistors 1200V/20A RC IGBT FSII RoHS: Compliant	318	1:$4.5000 10:$3.8300 100:$3.3200 250:$3.1500 500:$2.8300 1000:$2.3800 2500:$2.2700
NGTB20N120IHRWG	ON Semiconductor	Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant	750	1000:$2.4900 500:$2.6200 100:$2.7300 25:$2.8400 1:$3.0600
NGTB20N120IHRWG DISTI # 7961325	ON Semiconductor	IGBT 1200V 20A FIELD STOPDIODE TO247, PK	54	20:£2.8700 2:£3.4850
NGTB20N120IHRWG DISTI # 7961325P	ON Semiconductor	IGBT 1200V 20A FIELD STOPDIODE TO247, TU	126	20:£2.8700
NGTB20N120IHRWG	ON Semiconductor		2136
NGTB20N120IHRWG DISTI # 2399109	ON Semiconductor	TRANSISTOR, IGBT, 2.1V, 40A, TO-247-3 RoHS: Compliant	63	5000:$3.3600 2500:$3.4900 1000:$3.6700 500:$4.3500 250:$4.8500 100:$5.1000 10:$5.8900 1:$6.9200
NGTB20N120IHRWG DISTI # 2399109	ON Semiconductor	TRANSISTOR, IGBT, 2.1V, 40A, TO-247-3	63	500:£2.2000 250:£2.4500 100:£2.5800 10:£2.9800 1:£3.9100
NGTB20N120IHRWG	ON Semiconductor	IGBT,1200V,20A,FS2-RC Induction Heating	2350	1:$4.0400 100:$3.0300 500:$2.6000 1000:$2.4300

관련 상품

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	Mfr.#: NGTB20N120IHRW OMO.#: OMO-NGTB20N120IHRW-1190	신규 및 오리지널
	Mfr.#: NGTB20N120IHWG OMO.#: OMO-NGTB20N120IHWG-ON-SEMICONDUCTOR	IGBT 20A 1200V TO-247