IRF7779L2TR1PBF

IRF7779L2TR1PBF
Mfr. #:
IRF7779L2TR1PBF
제조사:
Infineon / IR
설명:
MOSFET 150V 67A 11mOhm 97nC Qg
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IRF7779L2TR1PBF 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF7779L2TR1PBF DatasheetIRF7779L2TR1PBF Datasheet (P4-P6)IRF7779L2TR1PBF Datasheet (P7-P9)IRF7779L2TR1PBF Datasheet (P10-P11)
ECAD Model:
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
DirectFET-L8
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
150 V
Id - 연속 드레인 전류:
67 A
Rds On - 드레인 소스 저항:
9 mOhms
Vgs th - 게이트 소스 임계 전압:
5 V
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
97 nC
최대 작동 온도:
+ 175 C
Pd - 전력 손실:
125 W
구성:
하나의
포장:
키:
0.74 mm
길이:
9.15 mm
트랜지스터 유형:
1 N-Channel
너비:
7.1 mm
상표:
인피니언 / IR
순방향 트랜스컨덕턴스 - 최소:
83 S
가을 시간:
12 ns
상품 유형:
MOSFET
상승 시간:
19 ns
공장 팩 수량:
1000
하위 카테고리:
MOSFET
부품 번호 별칭:
SP001575282
Tags
IRF777, IRF77, IRF7, IRF
Service Guarantees

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 150V 67A 15-Pin Direct-FET L8 T/R
***Components
MOSFET N-Ch 150V 67A Direct-FET L8
***ment14 APAC
N CH MOSFET, 150V, 11A DIRECTFET L8
***ied Electronics & Automation
MOSFET; 150V, 67A, 11 MOHM, 97NC QG
***i-Key
MOSFET N-CH 150V 375A DIRECTFET
***ernational Rectifier
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MP package rated at 11 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ark
N CH MOSFET, 150V, 11A DIRECTFET L8; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.009ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V ;RoHS Compliant: Yes
***nell
MOSFET, N CH, 150V, 67A, DIRECTFET L8; Transistor Polarity:N Channel; Current Id Max:67A; Drain Source Voltage Vds:150V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Power Dissipation:125W; Operating Temperature Range:-55°C to +175°C; No. of Pins:5
부분 # 제조 설명 재고 가격
IRF7779L2TR1PBF
DISTI # IRF7779L2TR1PBFTR-ND
Infineon Technologies AGMOSFET N-CH 150V 375A DIRECTFET
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    IRF7779L2TR1PBF
    DISTI # IRF7779L2TR1PBFCT-ND
    Infineon Technologies AGMOSFET N-CH 150V 375A DIRECTFET
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      IRF7779L2TR1PBF
      DISTI # IRF7779L2TR1PBFDKR-ND
      Infineon Technologies AGMOSFET N-CH 150V 375A DIRECTFET
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        IRF7779L2TR1PBF
        DISTI # 70019645
        Infineon Technologies AGIRF7779L2TR1PBF N-channel MOSFET Transistor,375 A,150 V,11-Pin DirectFET L8
        RoHS: Compliant
        0
        • 1000:$3.4300
        IRF7779L2TR1PBF
        DISTI # 942-IRF7779L2TR1PBF
        Infineon Technologies AGMOSFET 150V 67A 11mOhm 97nC Qg
        RoHS: Compliant
        0
          IRF7779L2TR1PBF
          DISTI # 1791559
          Infineon Technologies AGMOSFET, N CH, 150V, 67A, DIRECTFET L8
          RoHS: Compliant
          0
          • 1:$9.7600
          • 10:$5.9600
          • 100:$5.6700
          • 250:$5.3600
          • 500:$5.1700
          • 1000:$5.0000
          • 2000:$4.7900
          • 5000:$4.6600
          영상 부분 # 설명
          IRF7779L2TRPBF

          Mfr.#: IRF7779L2TRPBF

          OMO.#: OMO-IRF7779L2TRPBF

          MOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC
          IRF7779L2TR1PBF

          Mfr.#: IRF7779L2TR1PBF

          OMO.#: OMO-IRF7779L2TR1PBF

          MOSFET 150V 67A 11mOhm 97nC Qg
          IRF7779L2TRPBF.

          Mfr.#: IRF7779L2TRPBF.

          OMO.#: OMO-IRF7779L2TRPBF--1190

          Transistor Polarity:N Channel, Continuous Drain Current Id:67A, Drain Source Voltage Vds:150V, On Resistance Rds(on):0.009ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissi
          IRF7779L2TR1PBF

          Mfr.#: IRF7779L2TR1PBF

          OMO.#: OMO-IRF7779L2TR1PBF-INFINEON-TECHNOLOGIES

          IGBT Transistors MOSFET 150V 67A 11mOhm 97nC Qg
          IRF7779L2TRPBF

          Mfr.#: IRF7779L2TRPBF

          OMO.#: OMO-IRF7779L2TRPBF-INFINEON-TECHNOLOGIES

          MOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC
          유효성
          재고:
          Available
          주문 시:
          2500
          수량 입력:
          IRF7779L2TR1PBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
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