IRFB4510PBF

Mfr. #:: IRFB4510PBF
제조사:: Infineon Technologies
설명:: MOSFET 100V 10.7mOhm 62A HEXFET 140W 50nC
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IRFB4510PBF 데이터 시트
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HTML Datasheet:: IRFB4510PBF Datasheet IRFB4510PBF Datasheet (P4-P6)IRFB4510PBF Datasheet (P7-P8)
ECAD Model:
추가 정보:: IRFB4510PBF 추가 정보

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: 구멍을 통해

패키지/케이스:: TO-220-3

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 100 V

Id - 연속 드레인 전류:: 62 A

Rds On - 드레인 소스 저항:: 10.7 mOhms

Vgs th - 게이트 소스 임계 전압:: 4 V

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 58 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 175 C

Pd - 전력 손실:: 140 W

구성:: 하나의

채널 모드:: 상승

상표명:: 강한IRFET

포장:: 튜브

키:: 15.65 mm

길이:: 10 mm

트랜지스터 유형:: 1 N-Channel

너비:: 4.4 mm

상표:: 인피니언 테크놀로지스

순방향 트랜스컨덕턴스 - 최소:: 100 S

가을 시간:: 28 ns

상품 유형:: MOSFET

상승 시간:: 32 ns

공장 팩 수량:: 1000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 28 ns

일반적인 켜기 지연 시간:: 13 ns

부품 번호 별칭:: SP001566724

단위 무게:: 0.211644 oz

Tags: IRFB45, IRFB4, IRFB, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFB4510PBF 설명

***ure Electronics: Single N-Channel 100 V 13.5 mOhm 58 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***Yang: Trans MOSFET N-CH 100V 62A 3-Pin(3+Tab) TO-220AB - Rail/Tube

***(Formerly Allied Electronics): Transistor MOSFET N-ch 100V 44A TO-220AB

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 62A I(D), 100V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull

***ment14 APAC: MOSFET N CH 100V, 62A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0107ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:140W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2012)

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 62 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 10.7 / Gate-Source Voltage V = 20 / Fall Time ns = 28 / Rise Time ns = 32 / Turn-OFF Delay Time ns = 28 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 140

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 7.34 Milliohms;ID 80A;TO-220AB;PD 140W;-55de

***ure Electronics: Single N-Channel 75 V 9 mOhm 84 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***Yang: Trans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220AB - Rail/Tube

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 140 W

***ineon: Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive

***ment14 APAC: MOSFET, N, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:75V; On Resistance Rds(on):7.34mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-220AB; Power Dissipation Pd:140W; Pulse Current Idm:310A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 12Milliohms;ID 80A;TO-220AB;PD 260W;-55deg

***eco: Transistor MOSFET N Channel 100 Volt 80a 3-Pin 3+ Tab TO-220AB

***ure Electronics: Single N-Channel 100 V 15 mOhm 81 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***Yang: Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220AB - Rail/Tube

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 260 W

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ment14 APAC: MOSFET, N, 100V, 80A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(on):15mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:260W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:80A; Junction to Case Thermal Resistance A:0.57°C/W; On State resistance @ Vgs = 10V:15ohm; Package / Case:TO-220AB; Power Dissipation Pd:260W; Power Dissipation Pd:260W; Pulse Current Idm:320A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 11Milliohms;ID 73A;TO-220AB;PD 190W;-55deg

***ure Electronics: Single N-Channel 100 V 14 mOhm 90 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***p One Stop Global: Trans MOSFET N-CH 100V 73A 3-Pin(3+Tab) TO-220AB Tube

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 190 W

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 1210 2200pF U2J +/-5% 1000volts

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC; Consumer Full-Bridge; Full-Bridge; Push-Pull

***nell: MOSFET, N, 100V, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:73A; Resistance, Rds On:11mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220 (SOT-78B); Termination Type:Through Hole; Alternate Case Style:SOT-78B; Avalanche Single Pulse Energy Eas:370mJ; Current, Idm Pulse:290A; Lead Spacing:2.54mm; No. of Pins:3; Pin Configuration:a; Pin Format:1G, (2+Tab)D, 3S; Power Dissipation:190W; Power, Pd:190W; Power, Ptot:190W; Resistance, Rds on @ Vgs = 10V:0.014ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, trr Typ:35ns; Transistors, No. of:1; Typ Capacitance Ciss:3550pF; Voltage, Vds Max:100V; Voltage, Vgs th Max:4V; Voltage, Vgs th Min:2V

***p One Stop: Trans MOSFET N-CH 100V 9A Automotive 3-Pin(3+Tab) TO-220AB Tube

***emi: N-Channel PowerTrench® MOSFET, 100V, 61A, 16mΩ

***ure Electronics: N-Channel 100 V 16 mO PowerTrench Mosfet - TO-220AB

***enic: 100V 61A 150W 16m´Î@10V61A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

***r Electronics: Power Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:61A; On Resistance Rds(On):0.014Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Product Range:- Rohs Compliant: Yes

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:100V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:182mJ; Capacitance Ciss Typ:2880pF; Current Id Max:61A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:14mohm; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1G, (2+Tab)D, 3S; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Power Dissipation Ptot Max:150W; Pulse Current Idm:70A; Reverse Recovery Time trr Typ:62ns; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

***ponent Stockers USA: 75 A 80 V 0.01 ohm N-CHANNEL Si POWER MOSFET TO-220AB

***ser: MOSFETs 75a, 80V, 0.010 Ohm N-Ch MOSFET

***Yang: PWR MOS ULTRAFET 80V/75A/0.010 OHMS N-CH - Bulk

***ark: Trans MOSFET N-CH 100V 47A Automotive 3-Pin(3+Tab) TO-220AB Rail

***peria: N-channel TrenchMOS standard level FET

***or: PFET, 47A I(D), 100V, 0.028OHM,

IRFB4510PBF 추가 정보

StrongIRFET™ Power MOSFETs: Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability.

Market price

부분 #	제조	설명	재고	가격
IRFB4510PBF DISTI # V99:2348_13889980	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 62A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	1040	1000:$0.4858 500:$0.5874 100:$0.6685 10:$0.8173 1:$0.9146
IRFB4510PBF DISTI # IRFB4510PBF-ND	Infineon Technologies AG	MOSFET N CH 100V 62A TO220AB RoHS: Compliant Min Qty: 1 Container: Tube	943In Stock	1000:$0.5981 500:$0.7576 100:$0.9769 10:$1.2360 1:$1.4000
IRFB4510PBF DISTI # 26198093	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 62A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	1040	1000:$0.4858 500:$0.5874 100:$0.6685 16:$0.8173
IRFB4510PBF DISTI # 25287324	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 62A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	350	1000:$0.5222 500:$0.6614 100:$0.7488 22:$0.9792
IRFB4510PBF DISTI # IRFB4510PBF	Infineon Technologies AG	Trans MOSFET N-CH 100V 62A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB4510PBF) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	1000:$0.4169 2000:$0.4019 4000:$0.3879 6000:$0.3749 10000:$0.3679
IRFB4510PBF DISTI # IRFB4510PBF	Infineon Technologies AG	Trans MOSFET N-CH 100V 62A 3-Pin(3+Tab) TO-220AB (Alt: IRFB4510PBF) RoHS: Compliant Min Qty: 1000	Asia - 0
IRFB4510PBF DISTI # SP001566724	Infineon Technologies AG	Trans MOSFET N-CH 100V 62A 3-Pin(3+Tab) TO-220AB (Alt: SP001566724) RoHS: Compliant Min Qty: 1	Europe - 0	1:€0.7509 10:€0.6669 25:€0.6009 50:€0.5459 100:€0.4999 500:€0.4619 1000:€0.4289
IRFB4510PBF DISTI # 70411659	Infineon Technologies AG	IRFB4510PBF N-channel MOSFET Transistor,62 A,100 V,3-Pin TO-220AB RoHS: Compliant	540	1:$1.5840 10:$1.3980 100:$1.2190 500:$1.0560 1000:$0.9320
IRFB4510PBF DISTI # 942-IRFB4510PBF	Infineon Technologies AG	MOSFET 100V 10.7mOhm 62A HEXFET 140W 50nC RoHS: Compliant	1317	1:$1.1900 10:$1.0200 100:$0.7800 500:$0.6890 1000:$0.5440
IRFB4510PBF	International Rectifier	RoHS: Not Compliant	50	1000:$0.4700 500:$0.5000 100:$0.5200 25:$0.5400 1:$0.5800
IRFB4510PBF DISTI # 7848922	Infineon Technologies AG	TRANSISTOR MOSFET N-CH 100V 44A TO-220AB, PK	205	5:£0.9360 25:£0.7940 100:£0.6080 250:£0.5760 500:£0.5400
IRFB4510PBF DISTI # IRFB4510PBF	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,100V,62A,140W,TO220AB	123	1:$1.2700 3:$1.1500 10:$0.9400 100:$0.8000
IRFB4510PBF	International Rectifier	RoHS: Compliant	Europe - 50
IRFB4510PBF DISTI # IRFB4510PBF	Infineon Technologies AG	N-Ch 100V 62A 140W 0,0135R TO220AB RoHS: Compliant	300	10:€0.6810 50:€0.5010 200:€0.4410 500:€0.4245
IRFB4510PBF DISTI # C1S322000522103	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 62A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	1040	1000:$0.4858 500:$0.5874 100:$0.6685 10:$0.8173
IRFB4510PBF DISTI # XSLY00000000927	INFINEON/IR	TO-220AB RoHS: Compliant	756	1050:$0.6857
IRFB4510PBF DISTI # 2148085	Infineon Technologies AG	MOSFET N CH 100V, 62A, TO220 RoHS: Compliant	0	1:$1.8800 10:$1.6200 100:$1.2400 500:$1.1500

영상	부분 #	설명
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	Mfr.#: TUW15J2R0E OMO.#: OMO-TUW15J2R0E	Wirewound Resistors - Through Hole 15watt 2ohm 5% Axial
	Mfr.#: ATA6560-GAQW-N OMO.#: OMO-ATA6560-GAQW-N-MICROCHIP-TECHNOLOGY	INDUSTRIAL GRADE CAN TRX WITH NS
	Mfr.#: LDK320ADU120R OMO.#: OMO-LDK320ADU120R-STMICROELECTRONICS	IC REG LINEAR 12V 200MA SOT89
	Mfr.#: ABM11W-25.0000MHZ-4-D1X-T3 OMO.#: OMO-ABM11W-25-0000MHZ-4-D1X-T3-ABRACON	CRYSTAL 25.0000MHZ 4PF SMD
	Mfr.#: ATECC608A-SSHDA-B OMO.#: OMO-ATECC608A-SSHDA-B-MICROCHIP-TECHNOLOGY	IC AUTHENTICATION CHIP 8SOIC
	Mfr.#: TUW15J2R0E OMO.#: OMO-TUW15J2R0E-OHMITE	Wirewound Resistors - Through Hole 15watt 2ohm 5% Axial
	Mfr.#: UCC27710D OMO.#: OMO-UCC27710D-TEXAS-INSTRUMENTS	700V GATE DRIVER- 0.5A/1A PEAK C

IRFB4510PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes