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IXFR36N60P

IXFR36N60P
Mfr. #:
IXFR36N60P
제조사:
Littelfuse
설명:
Darlington Transistors MOSFET 600V 20A
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IXFR36N60P 데이터 시트
배달:
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지불:
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ECAD Model:
추가 정보:
IXFR36N60P 추가 정보
제품 속성
속성 값
제조사
익시스
제품 카테고리
FET - 단일
시리즈
IXFR36N60
포장
튜브
단위 무게
0.186952 oz
장착 스타일
SMD/SMT
상표명
하이퍼펫
패키지 케이스
TO-247-3
기술
시
채널 수
1 Channel
구성
하나의
트랜지스터형
1 N-Channel
Pd 전력 손실
208 W
최대 작동 온도
+ 150 C
최소 작동 온도
- 55 C
가을철
22 ns
상승 시간
25 ns
Vgs 게이트 소스 전압
30 V
Id-연속-드레인-전류
20 A
Vds-드레인-소스-고장-전압
600 V
Rds-On-Drain-Source-Resistance
200 mOhms
트랜지스터 극성
N-채널
일반 꺼짐 지연 시간
80 ns
일반 켜기 지연 시간
30 ns
순방향 트랜스컨덕턴스-최소
40 S
채널 모드
상승
Tags
IXFR3, IXFR, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 208 W 102 nC Silicon Through Hole Mosfet - ISOPLUS-247
***ical
Trans MOSFET N-CH Si 600V 20A 3-Pin(3+Tab) ISOPLUS 247
***ark
Mosfet, N, Isoplus247; Transistor Polarity:n Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; On Resistance Rds(On):0.2Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; No. Of Pins:3Pins Rohs Compliant: Yes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
부분 # 제조 설명 재고 가격
IXFR36N60P
DISTI # V99:2348_15878423		IXYS CorporationTrans MOSFET N-CH Si 600V 20A 3-Pin(3+Tab) ISOPLUS 247
RoHS: Compliant		60
  • 1000:$6.4719
  • 500:$6.6650
  • 250:$7.2600
  • 100:$7.8930
  • 50:$8.1240
  • 25:$8.7060
  • 10:$10.1510
  • 1:$11.1080
IXFR36N60P
DISTI # IXFR36N60P-ND		IXYS CorporationMOSFET N-CH 600V 20A ISOPLUS247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$10.4633
IXFR36N60P
DISTI # 29727953		IXYS CorporationTrans MOSFET N-CH Si 600V 20A 3-Pin(3+Tab) ISOPLUS 247
RoHS: Compliant		60
  • 50:$8.1240
  • 25:$8.7060
  • 10:$10.1510
  • 2:$11.1080
IXFR36N60P
DISTI # 24M3022		IXYS CorporationMOSFET, N, ISOPLUS247,Transistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.2ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power Dissipation Pd:208W RoHS Compliant: Yes232
  • 1:$13.3300
  • 10:$12.0100
  • 25:$9.9900
  • 50:$9.2800
  • 100:$9.0700
  • 250:$8.2800
  • 500:$7.5500
IXFR36N60P
DISTI # 747-IXFR36N60P		IXYS CorporationMOSFET 600V 20A
RoHS: Compliant		118
  • 1:$13.3300
  • 10:$12.0100
  • 25:$9.9900
  • 50:$9.2800
  • 100:$9.0700
  • 250:$8.2800
  • 500:$7.5500
  • 1000:$7.2000
IXFR36N60P
DISTI # C1S331700021744		IXYS CorporationTrans MOSFET N-CH 600V 20A 3-Pin(3+Tab) ISOPLUS 247
RoHS: Compliant		60
  • 50:$8.1240
  • 25:$8.7060
  • 10:$10.1510
  • 1:$11.1080
IXFR36N60P
DISTI # 1300099		IXYS CorporationMOSFET, N, ISOPLUS247
RoHS: Compliant		232
  • 1:£11.8900
  • 5:£11.3400
  • 10:£8.5100
  • 50:£7.9000
  • 100:£7.7200
IXFR36N60P
DISTI # 1300099		IXYS CorporationMOSFET, N, ISOPLUS247
RoHS: Compliant		232
  • 1:$21.1000
  • 10:$19.0100
  • 25:$15.8100
  • 50:$14.6800
  • 100:$14.3600
  • 250:$13.1100
  • 500:$11.9500
  • 1000:$11.4000
영상 부분 # 설명
IXFR32N100Q3

Mfr.#: IXFR32N100Q3

OMO.#: OMO-IXFR32N100Q3

 MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/23A
IXFR30N60P

Mfr.#: IXFR30N60P

OMO.#: OMO-IXFR30N60P

 MOSFET 600V 30A
IXFR32N80P

Mfr.#: IXFR32N80P

OMO.#: OMO-IXFR32N80P

 MOSFET 20 Amps 800V 0.29 Rds
IXFR30N110P

Mfr.#: IXFR30N110P

OMO.#: OMO-IXFR30N110P-IXYS-CORPORATION

 MOSFET N-CH 1100V 16A ISOPLUS247
IXFR32N100Q3

Mfr.#: IXFR32N100Q3

OMO.#: OMO-IXFR32N100Q3-IXYS-CORPORATION

 MOSFET N-CH 1000V 23A ISOPLUS247
IXFR32N80P

Mfr.#: IXFR32N80P

OMO.#: OMO-IXFR32N80P-IXYS-CORPORATION

 Darlington Transistors MOSFET 20 Amps 800V 0.29 Rds
IXFR36N60P

Mfr.#: IXFR36N60P

OMO.#: OMO-IXFR36N60P-IXYS-CORPORATION

 Darlington Transistors MOSFET 600V 20A
IXFR36N50P

Mfr.#: IXFR36N50P

OMO.#: OMO-IXFR36N50P-IXYS-CORPORATION

 Darlington Transistors MOSFET 500V 36A
IXFR32N50Q

Mfr.#: IXFR32N50Q

OMO.#: OMO-IXFR32N50Q-IXYS-CORPORATION

 MOSFET 30 Amps 500V 0.15 Rds
IXFR32N80Q3

Mfr.#: IXFR32N80Q3

OMO.#: OMO-IXFR32N80Q3-IXYS-CORPORATION

 IGBT Transistors MOSFET Q3Class HiPerFET Pwr MOSFET 800V/24A
유효성
재고:
Available
주문 시:
4500
수량 입력:
IXFR36N60P의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$9.71
US$9.71
10
US$9.22
US$92.22
100
US$8.74
US$873.71
500
US$8.25
US$4 125.85
1000
US$7.77
US$7 766.30
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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