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IPT029N08N5ATMA1

IPT029N08N5ATMA1
Mfr. #:
IPT029N08N5ATMA1
제조사:
Infineon Technologies
설명:
MOSFET MV POWER MOS
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPT029N08N5ATMA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IPT029N08N5ATMA1 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
SMD/SMT
패키지/케이스:
HSOF-8
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
80 V
Id - 연속 드레인 전류:
169 A
Rds On - 드레인 소스 저항:
2.9 mOhms
Vgs th - 게이트 소스 임계 전압:
2.2 V
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
87 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 175 C
Pd - 전력 손실:
167 W
구성:
하나의
채널 모드:
상승
포장:
릴
트랜지스터 유형:
1 N-Channel
상표:
인피니언 테크놀로지스
순방향 트랜스컨덕턴스 - 최소:
75 S
가을 시간:
13 ns
상품 유형:
MOSFET
상승 시간:
12 ns
공장 팩 수량:
2000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
42 ns
일반적인 켜기 지연 시간:
20 ns
부품 번호 별칭:
IPT029N08N5 SP001581494
Tags
IPT02, IPT0, IPT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ronik
N-CH 80V 169A 2,5mOhm HSOF-8
***et
DIFFERENTIATED MOSFETS
***ineon
OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Light Electric Vehicles (LEV)
Infineon Light Electric Vehicles have world-changing potential utilizing the emission-free solution for rising megacities. LEV's apply new technology enabling greater power efficiency, smaller size, lighter weight, and lower cost solutions. LEVs cost less when compared to gasoline or battery powered EVs, making them affordable and hence attractive to emerging markets, where a transition to electrified mobility is in progress.
부분 # 제조 설명 재고 가격
IPT029N08N5ATMA1
DISTI # V36:1790_16563202		Infineon Technologies AGMV POWER MOS0
  • 2000000:$1.9390
  • 1000000:$1.9400
  • 200000:$2.0450
  • 20000:$2.2080
  • 2000:$2.2340
IPT029N08N5ATMA1
DISTI # V72:2272_16563202		Infineon Technologies AGMV POWER MOS0
    IPT029N08N5ATMA1
    DISTI # IPT029N08N5ATMA1TR-ND    		Infineon Technologies AGMV POWER MOS
    RoHS: Compliant
    Min Qty: 2000
    Container: Tape & Reel (TR)    		On Order
    • 2000:$2.2338
    IPT029N08N5ATMA1
    DISTI # IPT029N08N5ATMA1CT-ND    		Infineon Technologies AGMV POWER MOS
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Temporarily Out of Stock
    • 1000:$2.4220
    • 500:$2.8717
    • 100:$3.3734
    • 10:$4.1170
    • 1:$4.5800
    IPT029N08N5ATMA1
    DISTI # IPT029N08N5ATMA1DKR-ND    		Infineon Technologies AGMV POWER MOS
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Temporarily Out of Stock
    • 1000:$2.4220
    • 500:$2.8717
    • 100:$3.3734
    • 10:$4.1170
    • 1:$4.5800
    IPT029N08N5ATMA1
    DISTI # IPT029N08N5ATMA1    		Infineon Technologies AGDIFFERENTIATED MOSFETS - Tape and Reel (Alt: IPT029N08N5ATMA1)
    RoHS: Compliant
    Min Qty: 2000
    Container: Reel    		Americas - 0
    • 12000:$1.9900
    • 20000:$1.9900
    • 8000:$2.0900
    • 4000:$2.1900
    • 2000:$2.2900
    IPT029N08N5ATMA1
    DISTI # SP001581494    		Infineon Technologies AGDIFFERENTIATED MOSFETS (Alt: SP001581494)
    RoHS: Compliant
    Min Qty: 2000    		Europe - 0
    • 20000:€1.6900
    • 12000:€1.7900
    • 4000:€1.9900
    • 8000:€1.9900
    • 2000:€2.0900
    IPT029N08N5ATMA1
    DISTI # 726-IPT029N08N5ATMA1    		Infineon Technologies AGMOSFET MV POWER MOS
    RoHS: Compliant    		400
    • 1:$4.2300
    • 10:$3.5900
    • 100:$3.1200
    • 250:$2.9600
    • 500:$2.6500
    • 1000:$2.2400
    • 2000:$2.1200
    영상 부분 # 설명
    IPT029N08N5ATMA1

    Mfr.#: IPT029N08N5ATMA1

    OMO.#: OMO-IPT029N08N5ATMA1

    		 MOSFET MV POWER MOS
    IPT029N08N5

    Mfr.#: IPT029N08N5

    OMO.#: OMO-IPT029N08N5-1190

    		 N-CH 80V 169A 2,5mOhm HSOF-8
    IPT029N08N5ATMA1

    Mfr.#: IPT029N08N5ATMA1

    OMO.#: OMO-IPT029N08N5ATMA1-INFINEON-TECHNOLOGIES

    		 MV POWER MOS
    유효성
    재고:
    400
    주문 시:
    2383
    수량 입력:
    IPT029N08N5ATMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$4.23
    US$4.23
    10
    US$3.59
    US$35.90
    100
    US$3.12
    US$312.00
    250
    US$2.96
    US$740.00
    500
    US$2.65
    US$1 325.00
    1000
    US$2.24
    US$2 240.00
    시작
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