FFSP05120A

Mfr. #:: FFSP05120A
제조사:: ON Semiconductor
설명:: Schottky Diodes & Rectifiers 1200V SiC SBD 5A
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: FFSP05120A 데이터 시트
배달:: DHL FedEx Ups TNT EMS
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ECAD Model:
추가 정보:: FFSP05120A 추가 정보

제품 속성
속성 값

제조사:: 온세미컨덕터

제품 카테고리:: 쇼트키 다이오드 및 정류기

RoHS:: Y

제품:: 쇼트키 탄화규소 다이오드

장착 스타일:: 구멍을 통해

패키지/케이스:: TO-220-2

If - 순방향 전류:: 5 A

Vrrm - 반복적인 역전압:: 1200 V

Vf - 순방향 전압:: 1.45 V

Ifsm - 순방향 서지 전류:: 42 A

구성:: 하나의

기술:: SiC

Ir - 역전류:: 200 uA

최소 작동 온도:: - 55 C

최대 작동 온도:: + 175 C

시리즈:: FFSP05120A

포장:: 튜브

상표:: 온세미컨덕터

Pd - 전력 손실:: 94 W

상품 유형:: 쇼트키 다이오드 및 정류기

공장 팩 수량:: 800

하위 카테고리:: 다이오드 및 정류기

단위 무게:: 0.076192 oz

Tags: FFSP0, FFSP, FFS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FFSP05120A 설명

***et Europe: Silicon Carbide Schottky Diode 1200 V 5 A 2-Pin TO-220 Through Hole Tube

***ical: Diode Schottky SiC 1.2KV 9.2A 2-Pin(2+Tab) TO-220 Tube

***Semiconductor: SiC Diode, 1200V, 5A, TO-220-2

***ark: Sic 1200V Diode / Tube

***i-Key: 1200V SIC SBD 10A

***rchild Semiconductor: Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.

***ment14 APAC: Prices include import duty and tax. SIC SCHOTTKY DIODE, 1.2KV, 9.2A, TO220-2; Product Range:-; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:1.2kV; Continuous Forward Current If:9.2A; Total Capacitive Charge Qc:37nC; Diode Case Style:TO-220; No. of Pins:2 Pin; Junction Temperature Tj Max:175°C; Automotive Qualification Standard:-; SVHC:No SVHC (15-Jan-2018); Forward Current If(AV):9.2A; Forward Surge Current Ifsm Max:42A; Forward Voltage VF Max:1.75V; Operating Temperature Max:175°C; Semiconductor Technology:SiC

***nell: DIODO SCHOTTKY SIC, 1,2KV, 9,2A, TO220-2; Gamma Prodotti:-; Configurazione Diodo:Singolo; Tensione Inversa Ripetitiva Vrrm Max:1.2kV; Corrente Diretta Continua If:9.2A; Potenza Reattiva Capacitiva Qc:37nC; Modello Involucro Diodo:TO-220; Numero di Pin:2 Pin; Temperatura di Giunzione Tj Max:175°C; Standard di Qualifica Automotive:-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018); Corrente Diretta If(AV):9.2A; Corrente di Picco Diretta Ifsm Max:42A; Tecnologia Semiconduttori:SiC; Temperatura di Esercizio Max:175°C; Tensione Diretta VF Max:1.75V

FFSP05120A 추가 정보

FFSP SiC Schottky Diodes: ON Semiconductor FFSP SiC (Silicon Carbide) Schottky Diodes are designed to leverage the advantages of Silicon Carbide over Silicon (Si) devices. FFSP SiC Schottky Diodes feature drastically higher forward surge capability, lower reverse leakage, and no reverse recovery current. These SiC Schottky Diodes also feature temperature independent switching characteristics and excellent thermal performance. This results in improved system efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

1200V SiC Schottky Diodes: ON Semiconductor 1200V Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high-efficiency, fast operating frequency, high-power density, low EMI, and reduced system size and cost.

Wide Bandgap SiC Devices: ON Semiconductor Wide Bandgap Silicon Carbide (SiC) Devices incorporate a completely new technology that provides superior switching performance and higher reliability compared to silicon. The system benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. ON Semiconductor’s SiC portfolio includes 650V and 1200V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.

Silicon Carbide Schottky Diodes: ON Semiconductor Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. SiC Schottky Diodes feature no reverse recovery current, temperature independent switching, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost. ON Semiconductor offers 650V and 1200V devices in a range of current and package options, ideal for next-generation power system designs.

Market price

부분 #	제조	설명	재고	가격
FFSP05120A DISTI # 28996035	ON Semiconductor	Silicon Carbide schottky diode	1600	800:$1.9503
FFSP05120A DISTI # FFSP05120A-ND	ON Semiconductor	DIODE SCHOTTKY 1.2KV TO220-2 RoHS: Not compliant Min Qty: 800 Container: Tube	Temporarily Out of Stock	800:$2.0684
FFSP05120A DISTI # V36:1790_18470537	ON Semiconductor	Silicon Carbide schottky diode	0	800000:$1.3820 400000:$1.3850 80000:$1.6100 8000:$2.0030 800:$2.0680
FFSP05120A DISTI # FFSP05120A	ON Semiconductor	Silicon Carbide Schottky Diode 1200 V 5 A 2-Pin TO-220 Through Hole Tube - Rail/Tube (Alt: FFSP05120A) RoHS: Compliant Min Qty: 800 Container: Tube	Americas - 0	8000:$1.3900 800:$1.4900 1600:$1.4900 3200:$1.4900 4800:$1.4900
FFSP05120A DISTI # 27AC5739	ON Semiconductor	SIC SCHOTTKY DIODE, 1.2KV, 9.2A, TO220-2,Product Range:-,Diode Configuration:Single,Repetitive Reverse Voltage Vrrm Max:1.2kV,Continuous Forward Current If:9.2A,Total Capacitive Charge Qc:37nC,Diode Case Style:TO-220,No. of	754	500:$1.8100 250:$1.8600 100:$2.1700 50:$2.4500 25:$2.5900 10:$2.9200 1:$3.3300
FFSP05120A DISTI # 512-FFSP05120A	ON Semiconductor	Schottky Diodes & Rectifiers 1200V SiC SBD 5A RoHS: Compliant	570	1:$3.1400 10:$2.6700 100:$2.3100 250:$2.1900 500:$1.9700
FFSP05120A DISTI # 2773494	ON Semiconductor	SIC SCHOTTKY DIODE, 1.2KV, 9.2A, TO220-2 RoHS: Not Compliant	754	1000:$2.3900 500:$2.6400 250:$3.0200 100:$3.3500 10:$3.8700 1:$4.4400
FFSP05120A DISTI # 2773494	ON Semiconductor	SIC SCHOTTKY DIODE, 1.2KV, 9.2A, TO220-2 RoHS: Not Compliant	754	500:£1.4300 250:£1.5900 100:£1.6700 10:£1.9400 1:£2.5600

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FFSP05120A

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes