GS8161E32DD-333I

GS8161E32DD-333I
Mfr. #:
GS8161E32DD-333I
제조사:
GSI Technology
설명:
SRAM 2.5 or 3.3V 512K x 32 16M
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
GS8161E32DD-333I 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
GS8161E32DD-333I 추가 정보
제품 속성
속성 값
제조사:
GSI 기술
제품 카테고리:
스램
메모리 크기:
18 Mbit
조직:
512 k x 32
액세스 시간:
4.5 ns
최대 클록 주파수:
333 MHz
인터페이스 유형:
평행 한
공급 전압 - 최대:
3.6 V
공급 전압 - 최소:
2.3 V
공급 전류 - 최대:
280 mA, 335 mA
최소 작동 온도:
- 40 C
최대 작동 온도:
+ 85 C
장착 스타일:
SMD/SMT
패키지/케이스:
BGA-165
포장:
쟁반
메모리 유형:
SDR
시리즈:
GS8161E32DD
유형:
DCD 파이프라인/플로우 스루
상표:
GSI 기술
습기에 민감한:
상품 유형:
스램
공장 팩 수량:
36
하위 카테고리:
메모리 및 데이터 저장
상표명:
싱크버스트
Tags
GS8161E32DD-33, GS8161E32DD-3, GS8161E32DD, GS8161E32, GS8161E3, GS8161E, GS8161, GS816, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync Quad 2.5V/3.3V 18M-Bit 512K x 32 4.5ns/2.5ns 165-Pin FBGA
***et
SRAM Chip Sync Dual 1.8V 18M-Bit 2M x 9-Bit 0.45ns 165-Pin FBGA Tray
***-Wing Technology
e0 Surface Mount CY7C1911 Tray ic memory 250MHz 450ps 15mm 430mA
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***or
QDR SRAM, 2MX9, 0.45NS, CMOS, PB
***et Europe
SRAM Chip Sync Single 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin FBGA Tray
***-Wing Technology
e1 Surface Mount CY7C1321 Tray ic memory 250MHz 450ps 370mA 18Mb
***ress Semiconductor SCT
DDR-II CIO, 18 Mbit Density, BGA-165, RoHS
***DA Technology Co., Ltd.
Product Description Demo for Development.
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***et
SRAM Chip Sync Single 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin FBGA Tray
***-Wing Technology
e0 Surface Mount CY7C1321 Tray ic memory 250MHz 450ps 370mA 18Mb
***ress Semiconductor SCT
DDR-II CIO, 18 Mbit Density, BGA-165
*** Services
CoC and 2-years warranty / RFQ for pricing
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***or
DDR SRAM, 512KX36, 0.45NS, CMOS,
***ark
18Mb, QUAD (Burst of 2), Sync SRAM, 1M x 18, 165 Ball FBGA (13x15 mm), RoHS
***ical
SRAM Chip Sync Dual 1.8V 18M-bit 1M x 18 0.45ns 165-Pin LFBGA
***i-Key
IC SRAM 18MBIT PARALLEL 165LFBGA
***ark
18Mb, QUAD (Burst of 2), Sync SRAM, 1M x 18, 165 Ball FBGA (15x17 mm), RoHS
***et
SRAM Chip Sync Single 1.8V 18M-Bit 1M x 18 165-Pin FBGA
***i-Key
IC SRAM 18MBIT PARALLEL 165LFBGA
SyncBurst SRAMs
GSI Technology SyncBurst SRAMs are a broad portfolio of Synchronous Burst (SyncBurst™) SRAMs with fast clock rates and low power. SyncBurst SRAMs provide a "burst" of (typically) 2 to 4 words in response to a single clock signal. The devices' simplified interface is designed to use a data bus's maximum bandwidth. SyncBurst SRAMs are used in military, networking, industrial, automotive and medical imaging applications where a mid-range performance point is required.Learn More
영상 부분 # 설명
GS8161E32DD-250

Mfr.#: GS8161E32DD-250

OMO.#: OMO-GS8161E32DD-250

SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E36DGD-333

Mfr.#: GS8161E36DGD-333

OMO.#: OMO-GS8161E36DGD-333

SRAM 2.5 or 3.3V 512K x 36 18M
GS8161E36DGD-333I

Mfr.#: GS8161E36DGD-333I

OMO.#: OMO-GS8161E36DGD-333I

SRAM 2.5 or 3.3V 512K x 36 18M
GS8161E36DD-200

Mfr.#: GS8161E36DD-200

OMO.#: OMO-GS8161E36DD-200

SRAM 2.5 or 3.3V 512K x 36 18M
GS8161E36DGD-150

Mfr.#: GS8161E36DGD-150

OMO.#: OMO-GS8161E36DGD-150

SRAM 2.5 or 3.3V 512K x 36 18M
GS8161E32DGT-150V

Mfr.#: GS8161E32DGT-150V

OMO.#: OMO-GS8161E32DGT-150V

SRAM 1.8/2.5V 512K x 32 16M
GS8161E36DGT-333IV

Mfr.#: GS8161E36DGT-333IV

OMO.#: OMO-GS8161E36DGT-333IV

SRAM 1.8/2.5V 512K x 36 18M
GS8161E32DGT-333

Mfr.#: GS8161E32DGT-333

OMO.#: OMO-GS8161E32DGT-333

SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E32DGD-200IV

Mfr.#: GS8161E32DGD-200IV

OMO.#: OMO-GS8161E32DGD-200IV

SRAM 1.8/2.5V 512K x 32 16M
GS8161E36DD-150IV

Mfr.#: GS8161E36DD-150IV

OMO.#: OMO-GS8161E36DD-150IV

SRAM 1.8/2.5V 512K x 36 18M
유효성
재고:
Available
주문 시:
4500
수량 입력:
GS8161E32DD-333I의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
36
US$21.64
US$779.04
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
시작
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