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SIRC18DP-T1-GE3

SIRC18DP-T1-GE3
Mfr. #:
SIRC18DP-T1-GE3
제조사:
Vishay / Siliconix
설명:
MOSFET 30V Vds 20V Vgs PowerPAK SO-8
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SIRC18DP-T1-GE3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIRC18DP-T1-GE3 DatasheetSIRC18DP-T1-GE3 Datasheet (P4-P6)SIRC18DP-T1-GE3 Datasheet (P7)
ECAD Model:
추가 정보:
SIRC18DP-T1-GE3 추가 정보
제품 속성
속성 값
제조사:
비쉐이
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
SMD/SMT
패키지/케이스:
PowerPAK-SO-8
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
30 V
Id - 연속 드레인 전류:
60 A
Rds On - 드레인 소스 저항:
850 uOhms
Vgs th - 게이트 소스 임계 전압:
1 V
Vgs - 게이트 소스 전압:
- 16 V, 20 V
Qg - 게이트 차지:
111 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
54.3 W
구성:
하나의
채널 모드:
상승
상표명:
TrenchFET, PowerPAK
포장:
릴
시리즈:
선생님
트랜지스터 유형:
1 N-Channel
상표:
비쉐이 / 실리콘닉스
순방향 트랜스컨덕턴스 - 최소:
70 S
가을 시간:
12 ns
상품 유형:
MOSFET
상승 시간:
21 ns
공장 팩 수량:
3000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
30 ns
일반적인 켜기 지연 시간:
16 ns
Tags
SIRC1, SIRC, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
TrenchFET Gen IV Power MOSFET N-Channel with Schottky Diode 30V VDS +20V -16V VGS 60A ID 8-Pin PowerPAK SOIC T/R
***ical
Trans MOSFET N-CH 30V 60A 8-Pin PowerPAK SO EP T/R
***i-Key
MOSFET N-CH 30V 60A POWERPAKSO-8
***ark
MOSFET, N-CH, 30V, 60A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):850�ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V; Power RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 30V, 60A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):850µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V; Power Dissipation Pd:54.3W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)
***nell
MOSFET, CA-N, 30V, 60A, POWERPAK SO; Polarità Transistor:Canale N; Corrente Continua di Drain Id:60A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):850µohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.4V; Dissipazione di Potenza Pd:54.3W; Modello Case Transistor:PowerPAK SO; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Gen IV Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
부분 # 제조 설명 재고 가격
SIRC18DP-T1-GE3
DISTI # V72:2272_21388849		Vishay IntertechnologiesN-Channel 30 V (D-S) MOSFET with Schottky Diode4407
  • 75000:$0.5302
  • 30000:$0.5332
  • 15000:$0.5362
  • 6000:$0.5393
  • 3000:$0.5423
  • 1000:$0.5453
  • 500:$0.7157
  • 250:$0.8333
  • 100:$0.8607
  • 50:$0.9001
  • 25:$1.0001
  • 10:$1.1112
  • 1:$1.4801
SIRC18DP-T1-GE3
DISTI # V99:2348_21388849		Vishay IntertechnologiesN-Channel 30 V (D-S) MOSFET with Schottky Diode0
  • 6000000:$0.5738
  • 3000000:$0.5739
  • 600000:$0.5746
  • 60000:$0.5754
  • 6000:$0.5755
SIRC18DP-T1-GE3
DISTI # SIRC18DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 60A POWERPAKSO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5320In Stock
  • 1000:$0.6351
  • 500:$0.8045
  • 100:$0.9738
  • 10:$1.2490
  • 1:$1.4000
SIRC18DP-T1-GE3
DISTI # SIRC18DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 60A POWERPAKSO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5320In Stock
  • 1000:$0.6351
  • 500:$0.8045
  • 100:$0.9738
  • 10:$1.2490
  • 1:$1.4000
SIRC18DP-T1-GE3
DISTI # SIRC18DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 60A POWERPAKSO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 15000:$0.5262
  • 6000:$0.5467
  • 3000:$0.5755
SIRC18DP-T1-GE3
DISTI # 30209835		Vishay IntertechnologiesN-Channel 30 V (D-S) MOSFET with Schottky Diode4407
  • 15000:$0.5362
  • 6000:$0.5393
  • 3000:$0.5423
  • 1000:$0.5453
  • 500:$0.7157
  • 250:$0.8333
  • 100:$0.8607
  • 50:$0.9001
  • 25:$1.0001
  • 12:$1.1112
SIRC18DP-T1-GE3
DISTI # SIRC18DP-T1-GE3		Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel with Schottky Diode 30V VDS +20V -16V VGS 60A ID8-Pin PowerPAK SOIC T/R - Tape and Reel (Alt: SIRC18DP-T1-GE3)
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$0.5009
  • 30000:$0.5149
  • 18000:$0.5299
  • 12000:$0.5519
  • 6000:$0.5689
SIRC18DP-T1-GE3
DISTI # 59AC7428		Vishay IntertechnologiesN-CHANNEL 30-V (D-S) MOSFET W/SCHOTT0
  • 10000:$0.4980
  • 6000:$0.5090
  • 4000:$0.5290
  • 2000:$0.5880
  • 1000:$0.6460
  • 1:$0.6740
SIRC18DP-T1-GE3
DISTI # 78-SIRC18DP-T1-GE3		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK SO-8
RoHS: Compliant		8359
  • 1:$1.3600
  • 10:$1.1200
  • 100:$0.8650
  • 500:$0.7430
  • 1000:$0.5870
  • 3000:$0.5480
  • 6000:$0.5200
  • 9000:$0.5010
SIRC18DP-T1-GE3
DISTI # 2846632		Vishay IntertechnologiesMOSFET, N-CH, 30V, 60A, POWERPAK SO
RoHS: Compliant		48
  • 1000:$0.9580
  • 500:$1.2200
  • 100:$1.4700
  • 5:$1.8900
SIRC18DP-T1-GE3
DISTI # 2846632		Vishay IntertechnologiesMOSFET, N-CH, 30V, 60A, POWERPAK SO48
  • 500:£0.5680
  • 250:£0.6150
  • 100:£0.6610
  • 10:£0.9100
  • 1:£1.1900
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Mfr.#: UCC27511ADBVR

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Mfr.#: SI7157DP-T1-GE3

OMO.#: OMO-SI7157DP-T1-GE3

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STPSC12065GY-TR

Mfr.#: STPSC12065GY-TR

OMO.#: OMO-STPSC12065GY-TR

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Mfr.#: APV2111V

OMO.#: OMO-APV2111V

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SIRA80DP-T1-RE3

Mfr.#: SIRA80DP-T1-RE3

OMO.#: OMO-SIRA80DP-T1-RE3-VISHAY

 MOSFET N-CHAN 30V POWERPAK SO-8
SI7157DP-T1-GE3

Mfr.#: SI7157DP-T1-GE3

OMO.#: OMO-SI7157DP-T1-GE3-VISHAY

 MOSFET P-CH 20V 60A PPAK SO-8
STPSC12065GY-TR

Mfr.#: STPSC12065GY-TR

OMO.#: OMO-STPSC12065GY-TR-STMICROELECTRONICS

 DIODES AND RECTIFIERS
DSC1121CM1-100.0000T

Mfr.#: DSC1121CM1-100.0000T

OMO.#: OMO-DSC1121CM1-100-0000T-MICROCHIP-TECHNOLOGY

 Oscillator MEMS 100MHz ±50ppm (Stability) 15pF CMOS 55% 2.5V/3.3V Automotive 6-Pin QFN SMD T/R
유효성
재고:
Available
주문 시:
1991
수량 입력:
SIRC18DP-T1-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$1.36
US$1.36
10
US$1.12
US$11.20
100
US$0.86
US$86.50
500
US$0.74
US$371.50
1000
US$0.59
US$587.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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