SI4946CDY-T1-GE3

Mfr. #:: SI4946CDY-T1-GE3
제조사:: Vishay / Siliconix
설명:: MOSFET 60V Vds 20V Vgs SO-8
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SI4946CDY-T1-GE3 데이터 시트
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HTML Datasheet:: SI4946CDY-T1-GE3 Datasheet SI4946CDY-T1-GE3 Datasheet (P4-P6)SI4946CDY-T1-GE3 Datasheet (P7)
ECAD Model:
추가 정보:: SI4946CDY-T1-GE3 추가 정보

제품 속성
속성 값

제조사:: 비쉐이

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: SO-8

채널 수:: 2 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 60 V

Id - 연속 드레인 전류:: 6.1 A

Rds On - 드레인 소스 저항:: 51.6 mOhms

Vgs th - 게이트 소스 임계 전압:: 3 V

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 2.4 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 2.8 W

구성:: 듀얼

채널 모드:: 상승

포장:: 릴

시리즈:: Si4946CDY

트랜지스터 유형:: 2 N-Channel

상표:: 비쉐이 / 실리콘닉스

순방향 트랜스컨덕턴스 - 최소:: 17 S

가을 시간:: 20 ns

상품 유형:: MOSFET

상승 시간:: 35 ns

공장 팩 수량:: 2500

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 14 ns

일반적인 켜기 지연 시간:: 17 ns

Tags: SI4946, SI494, SI49, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4946CDY-T1-GE3 설명

***ical: Trans MOSFET N-CH 60V 5.2A 8-Pin SOIC N T/R

***et Europe: Trans MOSFET N-CH 60V 5.2A 8-Pin SOIC

***i-Key: MOSFET N-CHAN DUAL 60V SO-8

***ark: Mosfet, Dual N-Ch, 60V, Soic; Transistor Polarity:dual N Channel; Continuous Drain Current Id:6.1A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.033Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, DUAL N-CH, 60V, SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:6.1A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:2.8W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)

***nell: MOSFET, DOPPIO CA-N, 60V, SOIC; Polarità Transistor:Canale N Doppio; Corrente Continua di Drain Id:6.1A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.033ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:2.8W; Modello Case Transistor:SOIC; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)

SI4946CDY-T1-GE3 추가 정보

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET Gen IV MOSFETs: Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.

Market price

부분 #	제조	설명	재고	가격
SI4946CDY-T1-GE3 DISTI # V72:2272_21688014	Vishay Intertechnologies	SI4946CDY-T1-GE3	3681	75000:$0.3232 30000:$0.3274 15000:$0.3317 6000:$0.3360 3000:$0.3402 1000:$0.3604 500:$0.4675 250:$0.5313 100:$0.5669 50:$0.7125 25:$0.7387 10:$0.8362 1:$0.9462
SI4946CDY-T1-GE3 DISTI # SI4946CDY-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CHAN DUAL 60V SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2808In Stock	1000:$0.3942 500:$0.4993 100:$0.6045 10:$0.7750 1:$0.8700
SI4946CDY-T1-GE3 DISTI # SI4946CDY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CHAN DUAL 60V SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2808In Stock	1000:$0.3942 500:$0.4993 100:$0.6045 10:$0.7750 1:$0.8700
SI4946CDY-T1-GE3 DISTI # SI4946CDY-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CHAN DUAL 60V SO-8 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	25000:$0.3232 12500:$0.3317 5000:$0.3444 2500:$0.3700
SI4946CDY-T1-GE3 DISTI # 27066269	Vishay Intertechnologies	SI4946CDY-T1-GE3	3681	21:$0.9462
SI4946CDY-T1-GE3 DISTI # SI4946CDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 5.2A 8-Pin SOIC - Tape and Reel (Alt: SI4946CDY-T1-GE3) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	50000:$0.3109 25000:$0.3199 15000:$0.3289 10000:$0.3429 5000:$0.3529
SI4946CDY-T1-GE3 DISTI # SI4946CDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 5.2A 8-Pin SOIC (Alt: SI4946CDY-T1-GE3) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€0.3329 500:€0.3389 100:€0.3439 50:€0.3579 25:€0.3869 10:€0.4499 1:€0.6599
SI4946CDY-T1-GE3 DISTI # SI4946CDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 5.2A 8-Pin SOIC (Alt: SI4946CDY-T1-GE3) RoHS: Compliant Min Qty: 5000	Asia - 0
SI4946CDY-T1-GE3 DISTI # 50AC9666	Vishay Intertechnologies	MOSFET, DUAL N-CH, 60V, SOIC,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:6.1A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.033ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes	12028	1000:$0.3930 500:$0.4910 250:$0.5430 100:$0.5950 50:$0.6580 25:$0.7210 10:$0.7840 1:$0.9800
SI4946CDY-T1-GE3 DISTI # 59AC7484	Vishay Intertechnologies	DUAL N-CHANNEL 60-V (D-S) MOSFET	0	50000:$0.3140 30000:$0.3280 20000:$0.3530 10000:$0.3770 5000:$0.4090 1:$0.4180
SI4946CDY-T1-GE3 DISTI # 78-SI4946CDY-T1-GE3	Vishay Intertechnologies	MOSFET 60V Vds 20V Vgs SO-8 RoHS: Compliant	9742	1:$0.9600 10:$0.7750 100:$0.5880 500:$0.4860 1000:$0.3880 2500:$0.3520 5000:$0.3280 10000:$0.3150 25000:$0.3030
SI4946CDY-T1-GE3 DISTI # 2846626	Vishay Intertechnologies	MOSFET, DUAL N-CH, 60V, SOIC RoHS: Compliant	12023	1000:$0.5950 500:$0.7530 100:$0.9110 5:$1.1700
SI4946CDY-T1-GE3 DISTI # 2846626	Vishay Intertechnologies	MOSFET, DUAL N-CH, 60V, SOIC	12478	500:£0.3740 250:£0.4140 100:£0.4530 10:£0.6520 1:£0.8540

관련 상품

영상	부분 #	설명
	Mfr.#: ADS1115IDGST OMO.#: OMO-ADS1115IDGST	Analog to Digital Converters - ADC 16B ADC w/ Int MUX PGA Comp Osc & Ref
	Mfr.#: SZNUP2105LT1G OMO.#: OMO-SZNUP2105LT1G	TVS Diodes / ESD Suppressors SOT-23 27 CAN BUS
	Mfr.#: 1N5819HW-7-F OMO.#: OMO-1N5819HW-7-F	Schottky Diodes & Rectifiers Vr/40V Io/1A T/R
	Mfr.#: B530C-13-F OMO.#: OMO-B530C-13-F	Schottky Diodes & Rectifiers 30V 5A
	Mfr.#: PIC16F18326-E/SL OMO.#: OMO-PIC16F18326-E-SL	8-bit Microcontrollers - MCU 256B EEPROM 10b ADC 5b DAC SPI/I2C
	Mfr.#: ATMEGA328P-AU OMO.#: OMO-ATMEGA328P-AU	8-bit Microcontrollers - MCU 32KB In-system Flash 20MHz 1.8V-5.5V
	Mfr.#: ADS1115IDGST OMO.#: OMO-ADS1115IDGST-TEXAS-INSTRUMENTS	Analog to Digital Converters - ADC 16B ADC w/ Int MUX PGA Comp Osc & Ref
	Mfr.#: ATMEGA328P-AU OMO.#: OMO-ATMEGA328P-AU-MICROCHIP-TECHNOLOGY	Microcontrollers - MCU 8-bit Microcontrollers - MCU 32KB In-system Flash 20MHz 1.8V-5.5V
	Mfr.#: GRT31CR61H106ME01L OMO.#: OMO-GRT31CR61H106ME01L-MURATA-ELECTRONICS	Cap Ceramic 10uF 50V X5R 20% Pad SMD 1206 85C Automotive T/R
	Mfr.#: CRCW080510K0FKEAC OMO.#: OMO-CRCW080510K0FKEAC-VISHAY-DALE	D12/CRCW0805-C 100 10K 1% ET1

유효성

재고:: Available
주문 시:: 1992
수량 입력:

SI4946CDY-T1-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$0.96~~; ~~US$0.96~~

10: ~~US$0.78~~; ~~US$7.75~~

100: ~~US$0.59~~; ~~US$58.80~~

500: ~~US$0.49~~; ~~US$243.00~~

1000: ~~US$0.39~~; ~~US$388.00~~

2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.

시작

SI4946 19
SI494 80
SI49 329
SI4 2994

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SI4946CDY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes