TK2R9E10PL,S1X

Mfr. #:: TK2R9E10PL,S1X
제조사:: Toshiba
설명:: MOSFET Power MOSFET ID=240A VDSS=100V
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: TK2R9E10PL,S1X 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: TK2R9E10PL,S1X 추가 정보

제품 속성
속성 값

제조사:: 도시바

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: 구멍을 통해

패키지/케이스:: TO-220-3

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 100 V

Id - 연속 드레인 전류:: 240 A

Rds On - 드레인 소스 저항:: 2.4 mOhms

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 83 nC, 161 nC

Pd - 전력 손실:: 306 W

채널 모드:: 상승

포장:: 튜브

시리즈:: TK2R9E10PL

상표:: 도시바

가을 시간:: 46 ns

상품 유형:: MOSFET

상승 시간:: 22 ns

공장 팩 수량:: 50

하위 카테고리:: MOSFET

Tags: TK2

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TK2R9E10PL,S1X 추가 정보

TK2R9E10PL Silicon N-channel MOSFET: Toshiba TK2R9E10PL Silicon N-channel MOSFET is a high-speed switching device with a small gate charge of 48nC. The device features a small output charge of 164nC. The TK2R9E10PL also has a low drain-source on-resistance RDS(ON) that equals 2.4mΩ and low leakage current.

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