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IRFH5302DTRPBF

IRFH5302DTRPBF
Mfr. #:
IRFH5302DTRPBF
제조사:
Infineon / IR
설명:
MOSFET 20V DUAL N / P CH 2.5mOhms 26nC
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IRFH5302DTRPBF 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFH5302DTRPBF DatasheetIRFH5302DTRPBF Datasheet (P4-P6)IRFH5302DTRPBF Datasheet (P7-P9)
ECAD Model:
추가 정보:
IRFH5302DTRPBF 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
SMD/SMT
패키지/케이스:
PQFN-8
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
30 V
Id - 연속 드레인 전류:
100 A
Rds On - 드레인 소스 저항:
2.5 mOhms
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
26 nC
Pd - 전력 손실:
3.6 W
구성:
하나의
포장:
릴
키:
0.83 mm
길이:
6 mm
트랜지스터 유형:
1 N-Channel
너비:
5 mm
상표:
인피니언 / IR
상품 유형:
MOSFET
공장 팩 수량:
4000
하위 카테고리:
MOSFET
부품 번호 별칭:
SP001570962
Tags
IRFH5302DT, IRFH5302D, IRFH5302, IRFH53, IRFH5, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
On a Reel of 4000, N-Channel MOSFET, 100 A, 30 V, 8-Pin PQFN Infineon IRFH5302DTRPBF
***ure Electronics
Single N-Channel 30 V 2.5 mOhm 26 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***ied Electronics & Automation
MOSFET, N-Channel, 30V FETky, 100A, 2.5 mOhm, 26 nC Qg, PQFN
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET with an integrated Schottky Diode in a 5mm X 6mm PQFN package
***ical
Trans MOSFET N-CH 30V 29A 8-Pin PQFN EP T/R
***i-Key
MOSFET N-CH 30V 29A 8VQFN
***nell
MOSFET, CAN N, 30V, 100A, 150°C, 104W;
***ment14 APAC
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.35V; Power Dissipation Pd:3.6W
***ark
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.35V; Power Dissipation Pd:3.6W;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDSon (less than 1.15 mO); Low Thermal Resistance to PCB (less than 0.8C/W); 100% Rg tested; Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
PQFN 5x6 Package HEXFET® Power MOSFETs
Infineon PQFN Package HEXFET Power MOSFETs are an addition to an extensive portfolio of devices featuring IR's latest low-voltage HEXFET MOSFET silicon in a PQFN package for low power applications including battery protection switch, secondary side synchronous rectification, inverter for DC motors, DC-DC brick, and boost converters. Featuring a very low on-state resistance (RDS(on)) to significantly cut conduction losses, these new power MOSFETs are available as 20V, 40V and 75V devices in N-Channel configurations. As a result of the low RDS(on) of this platform, these devices can be used to replace MOSFETs in larger packages to save board space and reduce system cost.Learn More
부분 # 제조 설명 재고 가격
IRFH5302DTRPBF
DISTI # IRFH5302DTRPBF-ND		Infineon Technologies AGMOSFET N-CH 30V 29A 8VQFN
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 4000:$0.9615
IRFH5302DTRPBF
DISTI # IRFH5302DTRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 29A 8-Pin PQFN EP T/R (Alt: IRFH5302DTRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Asia - 0
  • 4000:$0.7746
  • 8000:$0.7428
  • 12000:$0.7328
  • 20000:$0.7042
  • 40000:$0.6952
  • 100000:$0.6778
  • 200000:$0.6613
IRFH5302DTRPBF
DISTI # IRFH5302DTRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 29A 8-Pin PQFN EP T/R - Tape and Reel (Alt: IRFH5302DTRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 4000:$0.7459
  • 8000:$0.7189
  • 16000:$0.6929
  • 24000:$0.6699
  • 40000:$0.6579
IRFH5302DTRPBF
DISTI # 70019249		Infineon Technologies AGMOSFET,N-Channel,30V FETky,100A,2.5mOhm,26 nC Qg,PQFN
RoHS: Compliant		0
  • 4000:$1.5700
IRFH5302DTRPBF
DISTI # 942-IRFH5302DTRPBF		Infineon Technologies AGMOSFET 20V DUAL N / P CH 2.5mOhms 26nC
RoHS: Compliant		155
  • 1:$1.9100
  • 10:$1.6200
  • 100:$1.3000
  • 500:$1.1400
  • 1000:$0.9390
  • 4000:$0.8420
  • 8000:$0.8100
IRFH5302DTRPBF
DISTI # 1300980P		Infineon Technologies AGMOSFET HEXFET N-CH 30V 29A PQFN8, RL1950
  • 25:£0.5360
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유효성
재고:
Available
주문 시:
1985
수량 입력:
IRFH5302DTRPBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$1.91
US$1.91
10
US$1.62
US$16.20
100
US$1.30
US$130.00
500
US$1.14
US$570.00
1000
US$0.94
US$939.00
시작
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