A3I35D012WNR1

Mfr. #:: A3I35D012WNR1
제조사:: NXP Semiconductors
설명:: RF Amplifier A3I35D012WN/FM17F///REEL 13 Q2 DP
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: A3I35D012WNR1 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: A3I35D012WNR1 추가 정보 A3I35D012WNR1 Product Details

제품 속성
속성 값

제조사:: NXP

제품 카테고리:: RF 증폭기

RoHS:: Y

장착 스타일:: SMD/SMT

패키지/케이스:: TO-270WB-17

유형:: 광대역

동작 주파수:: 3200 MHz to 4000 MHz

얻다:: 28.9 dB

작동 공급 전압:: 28 V

테스트 빈도:: 3600 MHz

작동 공급 전류:: 260 mA

최소 작동 온도:: - 40 C

최대 작동 온도:: + 150 C

포장:: 릴

상표:: NXP반도체

채널 수:: 2 Channel

습기에 민감한:: 네

상품 유형:: RF 증폭기

공장 팩 수량:: 500

하위 카테고리:: 무선 및 RF 집적 회로

부품 번호 별칭:: 935379914528

Tags: A3I3, A3I

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

A3I35D012WNR1 추가 정보

RF High-Power Wideband Drivers: NXP Semiconductors RF High-Power Wideband Drivers provide macro cellular networks that simultaneously cover multiple cellular bands. These drivers come with a superior level of integration and functionality that enables high quality and high-speed network connectivity. The RF wideband drivers are designed for digital pre-distortion error correction systems and incorporate on-chip matching (50Ω input and DC blocked). These drivers are optimized for Doherty applications and wide instantaneous bandwidth applications.

NXP RF-IF Solutions: NXP RF-IF Solutions meet the needs of the most demanding RF applications by allowing designers to meet the highest specifications for performance while still retaining potential trade-offs with respect to efficiency, power, ruggedness, consistency, and integration levels. The NXP RF-IF portfolio covers the majority of communication and transmission systems, making it easy to find a solution that matches a designer's particular requirements. NXP RF-IF solutions include the SA6xx Series RF/IF building blocks that are ideal for a variety of niche handheld RF products. Available in small-footprint packages, SA6xx solutions save PCB space while providing better RF performance.Learn More

Airfast® Third-Generation Power Amplifiers: NXP Semiconductors Airfast® Third-Generation Power Amplifiers provide the best in class performance for the critical parameters that include efficiency, gain, RF power, and signal bandwidth. The Airfast third-generation technology reduces the footprint required to deliver specific RF output power. These amplifiers include 28V and 48V LDMOS transistors. The Airfast third-generation amplifiers are designed for the asymmetrical Doherty amplifier architectures. These amplifiers feature high efficiency, reduced solution size, thermal performance, and operate at wideband frequency. The Airfast third-generation amplifiers support all global cellular standards including LTE and NR for 5G. These amplifiers reduce both the size of cellular base stations and the installation costs.

관련 상품

영상	부분 #	설명
	Mfr.#: A3I35D025WNR1 OMO.#: OMO-A3I35D025WNR1	RF Amplifier LDMOS Wdbnd Pwr Amp 3200-4000 MH 3.4W28V
	Mfr.#: A3I35D012WNR1 OMO.#: OMO-A3I35D012WNR1	RF Amplifier A3I35D012WN/FM17F///REEL 13 Q2 DP
	Mfr.#: A3I35D012WGNR1 OMO.#: OMO-A3I35D012WGNR1	RF Amplifier A3I35D012WGN/FM17F///REEL 13 Q2 DP
	Mfr.#: A3I35D025WGNR1 OMO.#: OMO-A3I35D025WGNR1	RF Amplifier LDMOS Wdbnd Pwr Amp 3200-4000 MH 3.4W28V
	Mfr.#: A3I35D025WNR1 OMO.#: OMO-A3I35D025WNR1-1152	Airfast RF LDMOS Wideband Integrated Power Amplifier, 3200-4000 MHz, 3.4 W Avg., 28 V
	Mfr.#: A3I35D025GN OMO.#: OMO-A3I35D025GN-1190	신규 및 오리지널