FDN358P

Mfr. #:: FDN358P
제조사:: ON Semiconductor / Fairchild
설명:: MOSFET SSOT-3 P-CH -30V
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: FDN358P 데이터 시트
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ECAD Model:

제품 속성
속성 값

제조사:: 온세미컨덕터

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: SSOT-3

채널 수:: 1 Channel

트랜지스터 극성:: P-채널

Vds - 드레인 소스 항복 전압:: 30 V

Id - 연속 드레인 전류:: 1.5 A

Rds On - 드레인 소스 저항:: 125 mOhms

Vgs - 게이트 소스 전압:: 20 V

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 500 mW (1/2 W)

구성:: 하나의

채널 모드:: 상승

상표명:: 파워트렌치

포장:: 릴

키:: 1.12 mm

길이:: 2.9 mm

제품:: MOSFET 소신호

시리즈:: FDN358P

트랜지스터 유형:: 1 P-Channel

유형:: MOSFET

너비:: 1.4 mm

상표:: 온세미컨덕터 / 페어차일드

순방향 트랜스컨덕턴스 - 최소:: 3.5 S

가을 시간:: 13 ns

상품 유형:: MOSFET

상승 시간:: 13 ns

공장 팩 수량:: 3000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 12 ns

일반적인 켜기 지연 시간:: 5 ns

부품 번호 별칭:: FDN358P_NL

단위 무게:: 0.001058 oz

Tags: FDN358P, FDN358, FDN35, FDN3, FDN

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDN358P 설명

***Components: In a Pack of 5, P-Channel MOSFET, 1.5 A, 30 V, 3-Pin SOT-23 ON Semiconductor FDN358P

***Semiconductor: P-Channel PowerTrench® MOSFET, Logic Level, -30V, -1.5A, 125mΩ

***ure Electronics: Single P-Channel 30V 125 mOhm Logic Level PowerTrench Mosfet SSOT-3

***p One Stop Global: Trans MOSFET P-CH 30V 1.5A 3-Pin SOT-23 T/R

***p One Stop Japan: Trans MOSFET P-CH 30V 1.5A 3-Pin SuperSOT T/R

***trelec: MOSFET Operating temperature: -55...150 °C Marking: 358 Drive: logic level Housing type: SOT-23 Polarity: P Power dissipation: 500 mW

***ark: MOSFET, P, SOT-23, FULL REEL

***akorn: MOSFET P-Channel 30V 1.5A SuperSOT3

***ical: Trans MOSFET P-CH 30V 1.5A T/R

*** Source Electronics: MOSFET P-CH 30V 1.5A SSOT3

***eco: Fairchild Semi Fdn358P

***rchild Semiconductor: This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior sw itching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion.

***ment14 APAC: Prices include import duty and tax. MOSFET, P, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:1.6A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.2ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.9V; Power Dissipation Pd:560mW; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:1.5A; Current Temperature:25°C; Device Marking:FDN358P; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:5A; SMD Marking:358; Tape Width:8mm; Voltage Vds Typ:-30V; Voltage Vgs Max:-1.9V; Voltage Vgs Rds on Measurement:-10V

***nell: MOSFET, P, SOT-23; Polarità Transistor:Canale P; Corrente Continua di Drain Id:1.6A; Tensione Drain Source Vds:-30V; Resistenza di Attivazione Rds(on):0.2ohm; Tensione Vgs di Misura Rds(on):-10V; Tensione di Soglia Vgs:-1.9V; Dissipazione di Potenza Pd:560mW; Modello Case Transistor:SOT-23; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Id Max:1.5A; Corrente di Impulso Idm:5A; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Larghezza Esterna:3.05mm; Larghezza Nastro:8mm; Livello Temperatura a Piena Potenza:25°C; Lunghezza/Altezza Esterna:1.12mm; Marcatura Dispositivo:FDN358P; Marcatura SMD:358; No. di Transistor:1; Profondità Esterna:2.5mm; Temperatura di Corrente:25°C; Temperatura di Esercizio Min:-55°C; Tensione Vds Tipica:-30V; Tensione Vgs Max:-1.9V

Market price

부분 #	제조	설명	재고	가격
FDN358P DISTI # C1S541901591647	ON Semiconductor	Trans MOSFET P-CH 30V 1.5A 3-Pin SOT-23 T/R RoHS: Compliant	3013	3000:$0.1210
FDN358P DISTI # FDN358PCT-ND	ON Semiconductor	MOSFET P-CH 30V 1.5A SSOT3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	23795In Stock	1000:$0.1513 500:$0.2018 100:$0.2943 10:$0.4290 1:$0.5500
FDN358P DISTI # FDN358PDKR-ND	ON Semiconductor	MOSFET P-CH 30V 1.5A SSOT3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	23795In Stock	1000:$0.1513 500:$0.2018 100:$0.2943 10:$0.4290 1:$0.5500
FDN358P DISTI # FDN358PTR-ND	ON Semiconductor	MOSFET P-CH 30V 1.5A SSOT3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	21000In Stock	3000:$0.1347
FDN358P DISTI # FDN358P	ON Semiconductor	Trans MOSFET P-CH 30V 1.5A 3-Pin SuperSOT T/R (Alt: FDN358P) RoHS: Compliant Min Qty: 9000 Container: Tape and Reel	Asia - 0
FDN358P DISTI # FDN358P	ON Semiconductor	Trans MOSFET P-CH 30V 1.5A 3-Pin SuperSOT T/R - Cut TR (SOS) (Alt: FDN358P) RoHS: Compliant Min Qty: 1 Container: Cut Tape	Americas - 0
FDN358P DISTI # FDN358P	ON Semiconductor	Trans MOSFET P-CH 30V 1.5A 3-Pin SuperSOT T/R - Tape and Reel (Alt: FDN358P) RoHS: Compliant Min Qty: 6000 Container: Reel	Americas - 0	6000:$0.0879 12000:$0.0869 18000:$0.0859 30000:$0.0849 60000:$0.0829
FDN358P_G DISTI # FDN358P-G	ON Semiconductor	Trans MOSFET P-CH 30V 1.5A 3-Pin SOT-23 T/R (Alt: FDN358P-G) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
FDN358P DISTI # 87X5243	ON Semiconductor	MOSFET Transistor, P Channel, 1.6 A, 30 V, 200 mohm, -10 V, -1.9 V , RoHS Compliant: Yes	6000	1:$0.1160 3000:$0.1130 6000:$0.1110 12000:$0.1080 18000:$0.1040 30000:$0.0990
FDN358P DISTI # 58K8843	ON Semiconductor	P CHANNEL MOSFET, -30V, 1.5A SUPER SOT-3,Transistor Polarity:P Channel,Continuous Drain Current Id:1.6A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):200mohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.9V , RoHS Compliant: Yes	0	1:$0.4400 25:$0.3290 50:$0.2540 100:$0.1790 250:$0.1640 500:$0.1490 1000:$0.1340
FDN358P	ON Semiconductor	Single P-Channel 30V 125 mOhm Logic Level PowerTrench Mosfet SSOT-3 RoHS: Compliant	48000Reel	3000:$0.0995 6000:$0.0939 9000:$0.0926
FDN358P	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 1.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	70156	1000:$0.1600 500:$0.1700 100:$0.1800 25:$0.1900 1:$0.2000
FDN358P DISTI # 512-FDN358P	ON Semiconductor	MOSFET SSOT-3 P-CH -30V RoHS: Compliant	2993	1:$0.4400 10:$0.3290 100:$0.1790 1000:$0.1340 3000:$0.1160 9000:$0.1080 24000:$0.0990 45000:$0.0950
FDN358P	Fairchild Semiconductor Corporation		2123
FDN358P DISTI # 6710450P	ON Semiconductor	MOSFET P-CHANNEL 30V 1.5A SUPERSOT3, RL	6960	25:£0.2140 100:£0.1160 250:£0.1120 500:£0.1080
FDN358P DISTI # 6710450	ON Semiconductor	MOSFET P-CHANNEL 30V 1.5A SUPERSOT3, PK	805	5:£0.4140 25:£0.2140 100:£0.1160 250:£0.1120 500:£0.1080
FDN358P	Fairchild Semiconductor Corporation	1500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET	5	1:$0.3000
FDN358P	Fairchild Semiconductor Corporation	1500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET	16	7:$0.6212 1:$0.7765
FDN358P	Fairchild Semiconductor Corporation	RoHS: Compliant	Europe - 1885
FDN358P	Fairchild Semiconductor Corporation	INSTOCK	1843
FDN358P DISTI # FDN358P	Fairchild Semiconductor Corporation	RoHS: Compliant	76
FDN358P DISTI # XSFP00000073985	Fairchild Semiconductor Corporation	RoHS: Compliant	258432	3000:$0.1333 258432:$0.1250
FDN358P DISTI # 9846328	ON Semiconductor	MOSFET, P, SOT-23 RoHS: Compliant	8455	5:£0.2830 50:£0.2550 100:£0.1370 500:£0.1010 1500:£0.0945
FDN358P DISTI # 2438447	ON Semiconductor	MOSFET, P, SOT-23, FULL REEL RoHS: Compliant	6000	3000:$0.2140
FDN358P DISTI # 9846328RL	ON Semiconductor	MOSFET, P, SOT-23 RoHS: Compliant	0	1:$0.6970 10:$0.5210 100:$0.2840 1000:$0.2130 3000:$0.1840 9000:$0.1720 24000:$0.1570 45000:$0.1510
FDN358P DISTI # 9846328	ON Semiconductor	MOSFET, P, SOT-23 RoHS: Compliant	0	1:$0.6970 10:$0.5210 100:$0.2840 1000:$0.2130 3000:$0.1840 9000:$0.1720 24000:$0.1570 45000:$0.1510

관련 상품

영상	부분 #	설명
	Mfr.#: BQ296103DSGR OMO.#: OMO-BQ296103DSGR	Battery Management 2S-4S 2LP with LDO enable/disable
	Mfr.#: 24AA02UIDT-I/OT OMO.#: OMO-24AA02UIDT-I-OT	EEPROM 2K I2C EE Unique ID
	Mfr.#: MM3Z5V6C OMO.#: OMO-MM3Z5V6C	Zener Diodes Diode Zener 5.6V 200mW 5%
	Mfr.#: BSS138 OMO.#: OMO-BSS138	MOSFET SOT-23 N-CH LOGIC
	Mfr.#: CSD17308Q3 OMO.#: OMO-CSD17308Q3	MOSFET 30V NCh NexFET Pwr MOSFET
	Mfr.#: SI7114DN-T1-E3 OMO.#: OMO-SI7114DN-T1-E3	MOSFET 30V 18.3A 3.8W 7.5mohm @ 10V
	Mfr.#: BQ40Z50RSMR-R2 OMO.#: OMO-BQ40Z50RSMR-R2	Battery Management BQ40Z50RSMR-R2
	Mfr.#: BQ40Z60RHBT OMO.#: OMO-BQ40Z60RHBT	Battery Management BQ40Z60 complete multi-cell batt mngr
	Mfr.#: BAT54HT1G OMO.#: OMO-BAT54HT1G	Schottky Diodes & Rectifiers 30V 200mW Single
	Mfr.#: SI7114DN-T1-E3 OMO.#: OMO-SI7114DN-T1-E3-VISHAY	MOSFET N-CH 30V 11.7A 1212-8

유효성

재고:: 19
주문 시:: 2002
수량 입력:

FDN358P의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$0.44~~; ~~US$0.44~~

10: ~~US$0.33~~; ~~US$3.29~~

100: ~~US$0.18~~; ~~US$17.90~~

1000: ~~US$0.13~~; ~~US$134.00~~

2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.

시작

FDN358P 6
FDN358 9
FDN35 48
FDN3 253
FDN 332

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FDN358P

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes